Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets

• Published in: ACS nano Vol. 18; no. 20; pp. 13298 - 13307
• Main Authors: Sun, Ruo-Xuan, Hu, Zhen, Zhao, Xuewen, Zha, Ming-Jie, Zhang, Jinying, Chen, Xu-Dong, Liu, Zhibo, Tian, Jianguo
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 21-05-2024
• Subjects: flexo-photovoltaic effect; second-order nonlinear optics; strain engineering; violet phosphorus; bulk photovoltaic effect; inversion symmetry break
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.4c02821

As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley–Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10–3 V–1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.