Insights of Diffusion Doping in Formation of Dual-Layered Material and Doped Heterostructure SnS–Sn:Sb2S3 for Sodium Ion Storage

• Published in: The journal of physical chemistry letters Vol. 10; no. 5; pp. 1024 - 1030
• Main Authors: Bera, Suman, Roy, Amlan, Guria, Amit K, Mitra, Sagar, Pradhan, Narayan
• Format: Journal Article
• Language: English
• Published: American Chemical Society 07-03-2019
• ISSN: 1948-7185; 1948-7185
• DOI: 10.1021/acs.jpclett.9b00107

Insights into the formation mechanism of a dual-layered and doped heterostructure material SnIIS–SnIV:Sb2S3 are reported. In the presence of mixed alkyl thiols, first nanotubes of Sb2S3 were formed, and upon introduction of Sn­(IV), SnIIS was deposited onto the surface of these tubular structures. Upon further annealing at a constant temperature, sluggish transformation resulted in a Sn­(II)­S–Sn­(IV) doped Sb2S3 heterostructure, which finally turned to flake-like layered doped Sb2S3 nanostructures. SnS and Sb2S3, both being layered materials, were explored for the study of Na-ion storage, and these heterostructures were observed to be superior in comparison to the individual materials as well as the final doped nanostructures. The mechanism of formation of the heterostructures, the epitaxy at the junction, the diffusion doping, and the dopant-induced axial exfoliations leading to the final doped structures were studied. The electrochemical conversions in the presence of Na ions were also investigated, and insights into the mechanisms of both are reported in this Letter.