Search Results - Saijets, Jan

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology by Forsten, Henrik, Saijets, Jan H., Kantanen, Mikko, Varonen, Mikko, Kaynak, Mehmet, Piironen, Petri

“…This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended…”
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A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Holmberg, Jan, Parveg, Dristy, Kantanen, Mikko, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13  μ m SiGe BiCMOS technology for phased array applications. The…”
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Low loss KU‐ to KA‐band analog DMTL phase shifter with 360° phase shift by Saijets, Jan, Rantakari, Pekka, Vähä‐Heikkilä, Tauno

“…ABSTRACT A 15 GHz distributed MEMS transmission line (DMTL) based analog phase shifter was designed and characterized. The designed and measured device was…”
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Simulation and Modeling of Self-switching Devices by Åberg, Markku, Saijets, Jan, Song, Aimin, Prunnila, Mika

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AC modeling of the MOSFET channel series resistance by Saijets, Jan, Holmberg, Jan, Åberg, Markku

“…The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance…”
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Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba x Sr 1-x TiO 3 Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

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Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba^sub x^Sr^sub 1-x^TiO^sub 3^ Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

“…The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of …”
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Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered BaxSr1-xTiO3 Thin Films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, Van Dijken, Sebastiaan

“…The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of Ba x…”
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Cryogenic Single-Chip Multi-Channel LNA by Varonen, Mikko, Parveg, Dristy, Lehtisyrja, Lassi, Sipola, Hannu, Saijets, Jan

“…This paper presents the integration of multiple cryogenic low-noise amplifiers (LNAs) on a single chip designed for superconducting nanowire single photon…”
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MOSFET RF Extraction Uncertainties Due To S Parameter Measurement Errors by Saijets, Jan, Åberg, Markku

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Engineered High Resistivity Silicon Substrates in IPD Technology Used for Miniaturized sub-6 GHz Filters by Haapalinna, Atte, Holmberg, Heikki, Hujanen, Arto, Parkkinen, Katja, Rantakari, Pekka, Saijets, Jan, Vaha-Heikkia, Tauno

“…Engineered surface passivated high resistivity silicon (Si) substrates have been developed to improve performance of radio frequency devices. Measurements show…”
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Feasibility of a cryogenic SiGe amplifier at 4 k by Aberg, Markku, Saijets, Jan

“…The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not…”
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Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver…”
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Integrated Passive Device process for high quality factor passive components and modules by Vaha-Heikkila, Tauno, Saijets, Jan, Holmberg, Jan, Rantakari, Pekka, Ronkainen, Hannu, Tuovinen, Reijo

“…An Integrated Passive Device (IPD) technology has been developed for high quality factor (Q) passive components for radio frequency (RF) applications. This…”
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DC and AC characteristics and modeling of Si SSD-nano devices by Aberg, M., Saijets, J.

“…Silicon nano scale self switching device (SSD) and side gated transistor (SGT) are nano scale active components. These devices are manufactured with…”
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AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description by Saijets, J., Holmberg, J., Aberg, M.

“…The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and…”
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Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films by Riekkinen, Tommi, Saijets, Jan, Kostamo, Pasi, Sajavaara, Timo, van Dijken, Sebastiaan

“…Ferroelectrics 392, 3 (2009) The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice…”
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Silicon self-switching-device based logic gates operating at room temperature by Aberg, M., Saijets, J., Pursula, E., Prunnila, M., Ahopelto, J.

“…This paper presents first functional operational results of logic gates based on Silicon nano scale self switching devices (SSDs) and side gated transistors…”
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