Optical and electrical characterization of CdS thin films
Thin CdS films have been grown by chemical bath (CdCl2, thiourea, ammonia) deposition on SnO2 (TO)-coated glass substrate for use as window materials in CdS/CdTe solar cells. High-resolution TEM revealed grains with an average size of 10 nm. The structure was predominantly hexagonal with a high dens...
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| Published in: | Journal of materials science. Materials in electronics Vol. 7; no. 2; pp. 119 - 125 |
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| Main Authors: | , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-04-1996
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| Online Access: | Get full text |
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| Summary: | Thin CdS films have been grown by chemical bath (CdCl2, thiourea, ammonia) deposition on SnO2 (TO)-coated glass substrate for use as window materials in CdS/CdTe solar cells. High-resolution TEM revealed grains with an average size of 10 nm. The structure was predominantly hexagonal with a high density of stacking faults. The film crystallinity improved with annealing in air. Annealing in a CdCl2 flux increased the grain size considerably and reduced the density of stacking faults. The optical transmission of the as-deposited films indicated a band gap energy of 2.41 eV. Annealing in air reduced the band gap by 0.1 eV. Annealing in CdCl2 led to a sharper optical absorption edge that remained at 2.41 eV. Similar band gap values were obtained by photocurrent spectroscopy and electroabsorption spectroscopy (EEA) using an electrolyte contact. EEA spectra were broad for the as-deposited and air-annealed samples, but narrower for the CdCl2-annealed films, reflecting the reduction in stacking fault density. Donor densities of about 10 exp 17/cu cm were derived from the film /electrolyte junction capacitance. (Author) |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0957-4522 1573-482X |
| DOI: | 10.1007/BF00225634 |