Search Results - "von Zuben, A.A.G."

Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE by Morosini, M.B.Z., Herrera-Perez, J.L., Loural, M.S.S., Von Zuben, A.A.G., da Silveira, A.C.F., Patel, N.B.

“…Ga/sub 0.86/In/sub 0.14/As/sub 0.19/Sb/sub 0.87//Ga/sub 0.79/ Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ 2.2- mu m lasers grown by liquid-phase epitaxy (LPE) with…”
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Titanium–aluminum oxynitride (TAON) as high- k gate dielectric for sub-32 nm CMOS technology by Miyoshi, J., Diniz, J.A., Barros, A.D., Doi, I., Zuben, A.A.G. Von

“…High- k insulators for the next generation (sub-32 nm CMOS (complementary metal–oxide–semiconductor) technology), such as titanium–aluminum oxynitride (TAON)…”
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GaN nano- and micro-spheres fabricated selectively on silicon by Barea, L.A.M., von Zuben, A.A.G., Márquez, A.Z., Frateschi, N.C.

“…This work presents the selective growth of three-dimensional metallic gallium nitride structures on silicon substrates by chemical beam epitaxy (CBE) with a…”
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Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers by Morosini, M.B.Z., Herrera-Perez, J.L., da Silveira, A.C.F., Von Zuben, A.A.G., Loural, M.S.S., Patel, N.B.

“…We show that the development of 2.Z/spl mu/m emission low threshold Ridge Waveguide lasers from GaInAsSb/GaAIAsSb DH wafers is limited by the excessive current…”
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