Search Results - "vom Felde, A."
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1
Pressure of neon, argon and xenon bubbles in aluminium
Published in Physical review letters (27-08-1984)“…Neon, Ar and Xe bubbles in Al have been investigated by electron-energy-loss spectroscopy and transmission electron microscopy. The density and pressure in the…”
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Journal Article -
2
Quantum size effects in excitations of potassium clusters
Published in Physical review letters (07-11-1988)“…The electronic excitations of potassium clusters embedded in a MgO matrix have been investigated as a function of cluster size and momentum transfer by means…”
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3
Valence-electron excitations in the alkali metals
Published in Physical review. B, Condensed matter (15-11-1989)Get full text
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4
Aluminum bulk-plasmon dispersion and its anisotropy
Published in Physical review. B, Condensed matter (15-09-1989)Get full text
Journal Article -
5
Excitation of bubble surface plasmons in rare-gas-irradiated aluminum films
Published in Physical review. B, Condensed matter (15-05-1985)“…Neon, Ar, and Xe bubbles in Al have been investigated by means of electron-energy-loss spectroscopy. The spectra of the Al films containing Ne or Ar bubbles…”
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6
Oxidation of GaAs(110) with NO2 : infrared spectroscopy
Published in Physical review. B, Condensed matter (15-09-1990)Get full text
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7
Monitoring low-coverage surface chemistry with bulk transport : NO2 dissociation and oxygen penetration at at GaAs(110) surface
Published in Physical review. B, Condensed matter (01-10-1990)Get full text
Journal Article -
8
Si(111)(7×7) dangling bond contribution to surface recombination
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1992)“…We correlate photoconductivity with surface characterization in order to probe the influence of surface properties of Si(111) on carrier dynamics. Results on…”
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Conference Proceeding Journal Article -
9
The role of point defect sources in the formation of boron polyemitters
Published in Proceedings of 1994 IEEE International Electron Devices Meeting (1994)“…Optimization of steepness and penetration depths of boron emitter profiles is the key for realization of p-n-p transistors of high performance and speed…”
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Conference Proceeding -
10
Monitoring low-coverage surface chemistry with bulk transport: NO 2 dissociation and oxygen penetration at a GaAs(110) surface
Published in Physical review. B, Condensed matter (01-10-1990)Get full text
Journal Article -
11
Oxidation of GaAs(110) with NO 2 : Infrared spectroscopy
Published in Physical review. B, Condensed matter (15-09-1990)Get full text
Journal Article