Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

High-quality SiGe heterojunction bipolar transistors (HBTs) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic barriers in the conduction band varied over the wafer, and the influence of these barriers on controller current, early voltage, and cutoff f...

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Bibliographic Details
Published in:IEEE electron device letters Vol. 12; no. 7; pp. 357 - 359
Main Authors: Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.
Format: Journal Article
Language:English
Published: New York, NY IEEE 01-07-1991
Institute of Electrical and Electronics Engineers
Subjects:
Applied sciences
Conducting materials
Cutoff frequency
Electronics
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Molecular beam epitaxial growth
Performance evaluation
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Temperature measurement
Transistors
Voltage control
Transistor collector
Epitaxy
Transistor
Molecular beam
Experimental study
Implementation
Cut off frequency
Heterojunction transistor
Germanium
Bipolar technology
Silicon
Conduction band
Electric current
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Summary:High-quality SiGe heterojunction bipolar transistors (HBTs) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic barriers in the conduction band varied over the wafer, and the influence of these barriers on controller current, early voltage, and cutoff frequency were studied by experiments and simulations. Temperature-dependent measurements were performed to study the influence of the barriers on the effective bandgap narrowing in the base and to obtain an expression for the collector-current enhancement. From temperature-dependent measurements, the authors demonstrate that the collector-current enhancement of the HBTs can be described by a single exponential function with a temperature-independent prefactor.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.103606