Search Results - "van Hove, J. M."

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers by ASIF, KHAN M, KUZNIA, J. N, OLSON, D. T, VAN HOVE, J. M, BLASINGAME, M, REITZ, L. F

“…We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single-crystal GaN. The active layer (GaN) was…”
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Electrical effects of plasma damage in p-GaN by Cao, X. A., Pearton, S. J., Zhang, A. P., Dang, G. T., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of…”
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Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition by ASIF KHAN, M, KUZNIA, J. N, VAN HOVE, J. M, OLSON, D. T, KRISHNANKUTTY, S, KOLBAS, R. M

“…We report on the low-pressure metalorganic chemical vapor deposition of high quality single-crystal GaN layers over basal plane sapphire substrates…”
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Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition by ASIF KHAN, M, SKOGMAN, R. A, VAN HOVE, J. M, OLSON, D. T, KUZNIA, J. N

“…In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic…”
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Depth and thermal stability of dry etch damage in GaN Schottky diodes by Cao, X. A., Cho, H., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

“…GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical…”
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Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy by Li, L. K., Jurkovic, M. J., Wang, W. I., Van Hove, J. M., Chow, P. P.

“…The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated. The…”
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Effects of interfacial oxides on Schottky barrier contacts to n - and p -type GaN by Cao, X. A., Pearton, S. J., Dang, G., Zhang, A. P., Ren, F., Van Hove, J. M.

“…Schottky contacts were formed on n- and p-type GaN after either a conventional surface cleaning step in solvents, HCl and HF or with an additional treatment in…”
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A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts by FUNG, A. K, BORTON, J. E, NATHAN, M. I, VAN HOVE, J. M, HICKMAN, R. II, CHOW, P. P, WOWCHAK, A. M

“…We study the electrical characteristics (current vs voltage, I/V) of Co, In, Mg, Mn, Ni, and Zn each with an Au overlayer to determine their usefulness as…”
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High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition by ASIF KHAN, M, VAN HOVE, J. M, KUZNIA, J. N, OLSON, D. T

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Bias-assisted photoelectrochemical etching of p-GaN at 300 K by Borton, J. E., Cai, C., Nathan, M. I., Chow, P., Van Hove, J. M., Wowchak, A., Morkoc, H.

“…Photoelectrochemical (PEC) etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PEC etching of GaN was achieved by applying a…”
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Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition by Khan, M. Asif, Olson, D. T., Van Hove, J. M., Kuznia, J. N.

“…We report the first observation of near-UV vertical-cavity stimulated emission from a photopumped GaN epilayer at room temperature. The epilayer was deposited…”
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Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells by KHAN, M. A, SKOGMAN, R. A, VAN HOVE, J. M, KRISHNANKUTTY, S, KOLBAS, R. M

“…AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of…”
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Plasma damage in p-GaN by Cao, X. A., Zhang, A. P., Dang, G. T., Ren, F., Pearton, S. J., van Hove, J. M., Hickman, R. A., Shul, R. J., Zhang, L.

“…The effect of Inductively Coupled Plasma H sub(2) or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and…”
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Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy by Van Hove, J. M., Hickman, R., Klaassen, J. J., Chow, P. P., Ruden, P. P.

“…GaN p–i–n photovoltaic diode arrays were fabricated from epitaxial films deposited on sapphire by molecular beam epitaxy. Peak UV responsivity was 0.11 A/W at…”
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Effect of thermal stability of GaN epi-layer on the Schottky diodes by Lee, K.N, Cao, X.A, Abernathy, C.R, Pearton, S.J, Zhang, A.P, Ren, F, Hickman, R, Van Hove, J.M

“…The effect of annealing on the behavior of GaN Schottky diodes was investigated. Rapid thermal annealing experiments were performed in N 2 ambients for 30 s at…”
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High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors by Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J, Ren, F, Dang, G, Zhang, A.P, Abernathy, C.R, Pearton, S.J

“…GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250–300°C and power densities >10 kW…”
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Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures by Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchak, A.M, Chow, P.P, King, D.J, Zhang, A.P, Dang, G, Monier, C, Pearton, S.J, Ren, F

“…A drift-diffusion model was employed to calculate the dc performance of GaN/AlGaN heterojunction bipolar transistors (HBTs). The dc current gain was found to…”
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Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy by VAN HOVE, J. M, COHEN, P. I

“…GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a…”
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GaN n- and p-type Schottky diodes: Effect of dry etch damage by Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Van Hove, J.M.

“…The reverse breakdown voltage (V/sub B/) and forward turn-on voltage (V/sub F/) of n- and p-GaN Schottky diodes were used to examine the effects of Cl/sub…”
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Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures by Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchak, A.M, Chow, P.P, King, D.J, Zhang, A.P, Dang, G, Monier, C, Pearton, S.J, Ren, F

“…The dc characteristics of pnp GaN/AlGaN heterojunction bipolar transistors are simulated using a quasi-3D-model. The effects of base doping and thickness,…”
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