Search Results - "van Dover RB"
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1
High critical currents in iron-clad superconducting MgB2 wires
Published in Nature (London) (31-05-2001)“…Technically useful bulk superconductors must have high transport critical current densities, Jc, at operating temperatures. They also require a normal metal…”
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2
Amorphous lanthanide-doped TiOx dielectric films
Published in Applied physics letters (17-05-1999)“…Addition of Nd, Tb, or Dy to amorphous Ti–O thin films is found to improve the dielectric properties of the films. Specifically, substitution of 10–30 at. % of…”
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3
Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge
Published in Applied physics letters (02-09-2002)“…We show a systematic trend of x-ray photoelectron binding energy shifts for Zr- and Hf-silicates, which are related to the composition of the films. The…”
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4
Discovery of a useful thin-film dielectric using a composition-spread approach
Published in Nature (London) (12-03-1998)“…The continuing drive towards miniaturization of electronic devices is motivating the search for new materials. Consider, for example, the case of the much-used…”
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5
The Codeposited Composition Spread Approach to High-Throughput Discovery/Exploration of Inorganic Materials
Published in Macromolecular rapid communications. (01-01-2004)“…We discuss the high‐throughput materials discovery/exploration paradigm in the context of inorganic materials. We emphasize the codeposited continuous…”
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6
Magnetic anisotropy of epitaxial cobalt ferrite thin films
Published in Journal of magnetism and magnetic materials (1999)“…We have fabricated epitaxial single crystalline cobalt ferrite (CoFe 2O 4) thin films on CoCr 2O 4 buffered SrTiO 3 and MgAl 2O 4 substrates. Structural…”
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7
Multi-component high- K gate dielectrics for the silicon industry
Published in Microelectronic engineering (01-11-2001)“…The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon…”
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Journal Article Conference Proceeding -
8
Etching of high- k dielectric Zr1−xAlxOy films in chlorine-containing plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2001)“…As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch…”
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9
High dielectric constant Hf–Sn–Ti–O thin films
Published in Applied physics letters (27-09-1999)“…High dielectric constant Hf–Sn–Ti–O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2…”
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10
Correlation Between Temperature Coefficient of Resonant Frequency and Tetragonality Ratio
Published in Journal of the American Ceramic Society (01-03-2006)“…We show that the temperature coefficient of the resonant frequency of the tetragonal ceramics, τf, correlates to the measured tetragonality ratio (c/a). This…”
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11
Bulk superconductivity at 36 K in La1.8Sr0.2CuO4
Published in Physical review letters (26-01-1987)Get full text
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12
Composition-dependent crystallization of alternative gate dielectrics
Published in Applied physics letters (18-08-2003)“…We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced…”
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13
Technique to measure sub-microsecond magnetic field pulses using magnetic (CoPt) thin films
Published in Applied physics letters (31-10-2005)“…We introduce a technique to measure the maximum magnetic field of a submicrosecond duration pulse using magnetic CoPt thin films. In the present experiment,…”
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14
Effect of the Octahedral Bond Valence on Microwave Dielectric Properties of (1−x)Al0.5Ta0.5O2−xMg0.33Ta0.67O2 Ceramics
Published in Journal of the American Ceramic Society (01-03-2006)“…The dependence of the octahedral bond valence on the microwave dielectric properties of (1−x)Al0.5Ta0.5O2−xMg0.33Ta0.67O2 (0.6≤x≤1.0) ceramics was…”
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15
Crystallization kinetics in amorphous ( Zr 0.62 Al 0.38 ) O 1.8 thin films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2001)“…Thin films of Zr 0.62 Al 0.38 O 1.8 are amorphous when deposited at room temperature by rf magnetron sputtering. Crystallization occurs during subsequent…”
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16
High critical currents in iron-clad superconducting MgB sub(2) wires
Published in Nature (London) (31-05-2001)“…Technically useful bulk superconductors must have high transport critical current densities, J sub(c), at operating temperatures. They also require a normal…”
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17
Design of high frequency inductors based on magnetic films
Published in IEEE transactions on magnetics (01-07-1998)“…Magnetically coated stripe inductors with conductor insulated from the magnetic film and with conductor in direct electrical contact with the magnetic film are…”
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Journal Article Conference Proceeding -
18
Deposition of uniform Zr-Sn-Ti-O films by on-axis reactive sputtering
Published in IEEE electron device letters (01-09-1998)“…We describe the deposition of amorphous Zr-Sn-Ti-O (aZTT) dielectric thin films using conventional on-axis reactive sputtering. Thin films of composition…”
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19
A high-throughput search for electronic materials-thin-film dielectrics
Published in Biotechnology and bioengineering (1999)“…Parallel synthesis together with high‐throughput screening was used to identify candidate materials for integrated circuit applications that demand a superior…”
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20
Isotope effect in the high-Tc superconductors Ba2YCu3O7 and Ba2EuCu3O7
Published in Physical review letters (01-06-1987)“…The effect of isotopic substitution on the superconducting Tc in the 90-K superconductors Ba2YCu3O7 and Ba2EuCu3O7 by replacing O-16 with the heavier isotope…”
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