Search Results - "van Berkum, J.G.M"

Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics by KARAKAYA, K, BARCONES, B, RITTERSMA, Z. M, VAN BERKUM, J. G. M, VERHEIJEN, M. A, RIJNDERS, G, BLANK, D. H. A

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Quantitative depth profiling of SiOxNy layers on Si by van Berkum, J.G.M., Hopstaken, M.J.P., Snijders, J.H.M., Tamminga, Y., Cubaynes, F.N.

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Electrical and structural characterization of PLD grown CeO 2–HfO 2 laminated high- k gate dielectrics by Karakaya, K., Barcones, B., Rittersma, Z.M., van Berkum, J.G.M., Verheijen, M.A., Rijnders, G., Blank, D.H.A.

“…The electrical and physical properties of CeO 2–HfO 2 nanolaminates deposited by pulsed laser deposition (PLD) are investigated. The properties of the…”
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Quantitative depth profiling of SiO xN y layers on Si by van Berkum, J.G.M., Hopstaken, M.J.P., Snijders, J.H.M., Tamminga, Y., Cubaynes, F.N.

“…Depth profiling of ultra-thin SiO x N y gate dielectrics calls for a precise and reproducible SIMS measurement protocol and quantification scheme to give…”
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High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/ layers (0.3<x<0.4) and their significance for SiGe pMOSFET performance by Lander, R.J.P., Ponomarev, Y. V., van Berkum, J.G.M., de Boer, W.B.

“…Materials studies, hole transport measurements, and process and device simulations have been employed to determine the optimum epitaxial architecture of a…”
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Selective versus non-selective growth of Si and SiGe by De Boer, W.B, Terpstra, D, Van Berkum, J.G.M

“…Selective epitaxial growth of Si and SiGe at low temperatures and reduced pressure in a single-wafer CVD reactor has been characterized with respect to its…”
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Low energy boron implantation in silicon and room temperature diffusion by Collart, E.J.H, Weemers, K, Cowern, N.E.B, Politiek, J, Bancken, P.H.L, van Berkum, J.G.M, Gravesteijn, D.J

“…In the semiconductor industry Complementary Metal Oxide Semiconductor Technology is the main stream. The continuing trend towards reduction of the transistor…”
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Cluster ripening and transient enhanced diffusion in silicon by Cowern, N.E.B, Mannino, G, Stolk, P.A, Roozeboom, F, Huizing, H.G.A, van Berkum, J.G.M, Cristiano, F, Claverie, A, Jaraı́z, M

“…Transient enhanced diffusion of boron marker layers following silicon ion implantation shows a complex behavior as a function of annealing temperature and…”
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Explorations for high performance SiGe-heterojunction bipolar transistor integration by Deixler, P., Huizing, H.G.A., Donkers, J.J.T.M., Klootwijk, J.H., Hartskeerl, D., de Boer, W.B., Havens, R.J., van der Toorn, R., Paasschens, J.C.J., Kloosterman, W.J., van Berkum, J.G.M., Terpstra, D., Slotboom, J.W.

“…Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce…”
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Using Ge pre-amorphisation and spike annealing for optimizing shallow junctions in deep-submicron CMOS by Meyssen, V.M.H., Stolk, P.A., van Zijl, J.P., van Berkum, J.G.M., van der Wijgert, W.G.

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Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET Devices by Singanamalla, R., Ravit, C., Vellianitis, G., Petry, J., Paraschiv, V., van Zijl, J.P., Brus, S., Verheijen, M., Weemaes, R.G.R., Kaiser, M., van Berkum, J.G.M., Hooker, J.C., Vos, R., Yu, H., de Meyer, K., Kubicek, S., Biesemans, S.

“…We report band-edge pFET threshold voltage (V t ~ 0.28 V) for MoO x N y on HfSiON gate dielectric using a standard high temperature gate first metal-inserted…”
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Narrow Decaborane (B10H14) Implanted Base For High-Speed Si Bipolar Transistors by Deixler, P., Muda, G.C., Terpstra, D., Klootwijk, J.H., van Berkum, J.G.M., Havens, R.J.

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Optimization of Gate Oxide Recipes for 0.18 um CMOS Technology by van Brandenburg, A.C.M.C., Stolk, P.A., Montree, A.H., de Boer, W.B., van Berkum, J.G.M.

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Low energy (0.25-10 keV) /sup 11/B/sup +/ ion implantation damage characterisation using Rutherford backscattering spectrometry by Collart, E.J.H., Heijdra, M., Weemers, K., Tamminga, Y., van Berkum, J.G.M., Verheijen, M.A.

“…It is well established that ion implantation damage in the form of excess Si-interstitials is the main driving force behind transient enhanced diffusion or TED…”
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Low-energy implantations of decaborane (B/sub 10/H/sub 14/) ion clusters in silicon wafers by Dirks, A.G., Bancken, P.H.L., Politiek, J., Cowern, N.E.B., Snijders, J.H.M., Van Berkum, J.G.M., Verheijen, M.A.

“…Low-energy implantation with decaborane (B/sub 10/H/sub 14/) ion clusters is suitable for ultra-shallow junction formation. Using a high-voltage research…”
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The Effect of Thin Oxide Layers on Shallow Junction Formation by Stolk, P.A., Schmitz, J., Cubaynes, F.N., van Brandenburg, A.C.M.C., van Berkum, J.G.M., van de Wijgert, W.G., Roozeboom, F.

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A manufacturable 25 nm planar MOSFET technology by Ponomarev, Y.V., Loo, J.J.G.P., Dachs, C.J.J., Cubaynes, F.N., Verheijen, M.A., Kaiser, M., Van Berkum, J.G.M., Kubicek, S., Bolk, J., Rovers, M.

“…The limits of scaling of planar Si MOSFET devices has been a subject of increasing interest in recent years. Consumer demand for high-performance electronic…”
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Characterisation of low energy boron implants and electrical results of submicron PMOS transistors by Collart, E.J.H., Murrell, A.J., De Cock, G., Foad, M.A., Schmitz, J., van Zijl, J.P., van Berkum, J.G.M.

“…Low energy boron implants between 200 eV and 10 keV have been characterised for the effect of channelling and of pre-amorphisation on the as-implanted…”
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Ultra-shallow junction formation by outdiffusion from implanted oxide by Schmitz, J., van Gestel, M., Stolk, P.A., Ponomarev, Y.V., Roozeboom, F., van Berkum, J.G.M., Zalm, P.C., Woerlee, P.H.

“…We present a new method for the fabrication of shallow n/sup +/ and p/sup +/ junctions in silicon. The method consists of implanting a screening oxide followed…”
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SiGe fast-switching power diodes by Brown, A.R., Hurkx, G.A.M., Huizing, H.G.A., Peter, M.S., de Boer, W.B., van Berkum, J.G.M., Zalm, P.C., Huang, E., Koper, N.

“…SiGe is widely used in high-frequency bipolar transistors because of its low bandgap and compatibility with silicon. Here we exploit the same benefits of SiGe…”
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