Search Results - "van Assche, F.J.H."

High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing by van Assche, F.J.H., Kessels, W.M.M., Vangheluwe, R., Mischke, W.S., Evers, M., van de Sanden, M.C.M.

“…The deposition of amorphous silicon nitride (a-SiN x :H) films at high deposition rates (∼3 nm/s) and at low substrate temperatures (<150 °C) has been studied…”
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The growth kinetics of silicon nitride deposited from the SiH 4–N 2 reactant mixture in a remote plasma by Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M.

“…The growth mechanism of silicon nitride (a-SiN x :H) from the SiH 4–N 2 reactant mixture is discussed on the basis of results obtained in a remote plasma. From…”
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High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma by Kessels, W. M. M., Hong, J., van Assche, F. J. H., Moschner, J. D., Lauinger, T., Soppe, W. J., Weeber, A. W., Schram, D. C., van de Sanden, M. C. M.

“…Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the feasibility of high-rate (>1 nm/s) amorphous silicon nitride…”
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Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films by Hong, J., Kessels, W. M. M., van Assche, F. J. H., Rieffe, H. C., Soppe, W. J., Weeber, A. W., van de Sanden, M. C. M.

“…Silicon nitride (a‐SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti‐reflection…”
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The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma by Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M.

“…The growth mechanism of silicon nitride (a-SiNx:H) from the SiH4-N2 reactant mixture is discussed on the basis of results obtained in a remote plasma. From the…”
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High-rate (> 1 nm/s) plasma deposited a-SiN/sub x/:H films for mc-Si solar cell application by Hong, J., Kessels, W.M.M., van Assche, F.J.H., Arnold Bik, W.M., Rieffe, H.C., Soppe, W.J., Weeber, A., van de Sanden, M.C.M.

“…We present hydrogenated amorphous silicon nitride (a-SiN/sub x/:H) films for multicrystalline silicon (mc-Si) solar cells that are deposited at high rate (>…”
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