Search Results - "van ‘t Erve, O.M.J."

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts by Jonker, B.T, Li, C.H, van 't Erve, O.M.J

“…The International Technology Roadmap for Semiconductors has identified the electron's spin angular momentum as a new state variable that should be explored as…”
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Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states by Li, C. H., van ‘t Erve, O.M.J., Rajput, S., Li, L., Jonker, B. T.

“…Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking…”
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Electrical injection and detection of spin accumulation in Ge at room temperature by Hanbicki, A.T., Cheng, S.-F., Goswami, R., van ‘t Erve, O.M.J., Jonker, B.T.

“…We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n -type Ge(001) substrates with electron densities 2×10 16< n<8×10 17 cm −3, and…”
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Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature by Anil Kumar, P.S, Jansen, R, van ‘t Erve, O.M.J, Vlutters, R, de Haan, P, Lodder, J.C

“…A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The…”
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Phosphorus doping of silicon at substrate temperatures above 600 °C by Thompson, P.E., Jernigan, G.G., Simons, D., Chi, P., Jonker, B.T., Erve, O.M.J. van 't

“…Phosphorus doping of silicon during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 °C to 870 °C. By designing a…”
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Growth of ferromagnetic nanoparticles in Ge:Fe thin films by Goswami, R., Kioseoglou, G., Hanbicki, A. T., van 't Erve, O. M. J., Jonker, B. T., Spanos, G.

“…The microstructure and magnetic properties of Ge:Fe thin films grown by molecular-beam epitaxy have been studied by transmission electron microscopy and…”
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Spin injection across (110) interfaces: Fe∕GaAs(110) spin-light-emitting diodes by Li, C. H., Kioseoglou, G., van ’t Erve, O. M. J., Hanbicki, A. T., Jonker, B. T., Mallory, R., Yasar, M., Petrou, A.

“…We report electrical spin injection from an Fe contact into a (110)-oriented light-emitting diode (LED) structure, and compare results with data obtained from…”
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Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor by Jansen, R, Vlutters, R, Anil Kumar, P.S, van 't Erve, O.M.J, Kim, S.D, Lodder, J.C

“…Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni 80Fe…”
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Three routes to increase the output current of the spin-valve transistor by van 't Erve, O.M.J., Jansen, R., Postma, F.M., Lodder, J.C.

“…Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a…”
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