Search Results - "del Alamo, J.A."

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs by Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Seong-Yong Park, Taehun Lee, Wang, J., Kim, M.J., Jungwoo Joh, del Alamo, J.A.

“…AlGaN/GaN high-electron mobility transistors stressed under dc bias at various channel temperatures were studied using transmission electron microscopy for…”
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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors by Jungwoo Joh, del Alamo, J.A.

“…We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress…”
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A physical model for the kink effect in InAlAs/InGaAs HEMTs by Somerville, M.H., Ernst, A., del Alamo, J.A.

“…We present a new model for the the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises from a…”
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The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories by Harward, V. Judson, Jabbour, Imad, Long, Phillip D., Mao, Tingting, Naamani, Loai, Northridge, Jedidiah, Schulz, Mark, Talavera, Daniel, Varadharajan, Charuleka, Wang, Shaomin, Yehia, Karim, del Alamo, Jesus A., Zbib, Rabih, Zych, David, Lerman, Steven R., Bailey, Philip H., Carpenter, Joel, DeLong, Kimberley, Felknor, Chris, Hardison, James, Harrison, Bryant

“…The Massachusetts Institute of Technology's iLab project has developed a distributed software toolkit and middleware service infrastructure to support…”
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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz by Dae-Hyun Kim, del Alamo, J.A.

“…We report on InAs pseudomorphic high-electron mobility transistors (PHEMTs) on an InP substrate with record cutoff frequency characteristics. This result was…”
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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors by Jungwoo Joh, del Alamo, J.A., Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

“…In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is…”
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Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon by Fiorenza, J.G., del Alamo, J.A.

“…Simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage…”
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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors by Joh, J., del Alamo, J.A., Jimenez, J.

“…Current collapse in GaN high-electron mobility transistors (HEMTs) is a temporary reduction of drain-current immediately after the application of high voltage…”
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A through-wafer interconnect in silicon for RFICs by Wu, J.H., Scholvin, J., del Alamo, J.A.

“…In order to minimize ground inductance in RFICs, we have developed a high-aspect ratio, through-wafer interconnect (or substrate via) in silicon that features…”
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Lateral and Vertical Scaling of \hbox \hbox\hbox HEMTs for Post-Si-CMOS Logic Applications by Dae-Hyun Kim, del Alamo, J.A.

“…In this paper, we have experimentally investigated the impact of lateral and vertical scaling of In 0.7 Ga 0.3 As high-electron-mobility transistors (HEMTs)…”
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Carrier-induced change in refractive index of InP, GaAs and InGaAsP by Bennett, B.R., Soref, R.A., Del Alamo, J.A.

“…The change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss…”
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Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI by Scholvin, J., Fiorenza, J.G., del Alamo, J.A.

“…This paper presents an in-depth study of the effects of substrate-surface potential on the RF power performance of laterally diffused MOSFETs (LDMOSFETs)…”
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Sub-40 nm SOI V-groove n-MOSFETs by Appenzeller, J., Martel, R., Avouris, Ph, Knoch, J., Scholvin, J., del Alamo, J.A., Rice, P., Solomon, P.

“…We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest…”
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A Faraday cage isolation structure for substrate crosstalk suppression by Wu, J.H., Scholvin, J., del Alamo, J.A., Jenkins, K.A.

“…We have exploited a recently-developed, through-wafer via technology in silicon to implement a novel Faraday cage scheme for substrate crosstalk suppression in…”
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An insulator-lined silicon substrate-via technology with high aspect ratio by Wu, J.H., Scholvin, J., Del Alamo, J.A.

“…We have developed a novel high-aspect ratio substrate-via technology in silicon that features a SiN insulator liner. In this technology, the via is completely…”
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Positive temperature coefficient of impact ionization in strained-Si by Waldron, N.S., Pitera, A.J., Lee, M.L., Fitzgerald, E.A., del Alamo, J.A.

“…We have experimentally studied impact ionization (II) in the strained-Si layer of a strained-Si/SiGe heterostructure. Our key finding is that the impact…”
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GaN HEMT reliability by del Alamo, J.A., Joh, J.

“…This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical…”
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RF power LDMOSFET on SOI by Fiorenza, J.G., Antoniadis, D.A., del Alamo, J.A.

“…We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The…”
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Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack by Mertens, S.D., del Alamo, J.A., Suemitsu, T., Enoki, T.

“…We have experimentally investigated the hydrogen sensitivity of InP high-electron mobility transistors (HEMTs) with a WSiN-Ti-Pt-Au gate stack. We have found…”
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A metal/polysilicon damascene gate technology for RF power LDMOSFETs by Fiorenza, J.G., Scholvin, J., del Alamo, J.A.

“…This letter describes a metal/polysilicon damascene gate technology for RF power LDMOSFETs. We compare the performance of SOI LDMOSFETs with metal/polysilicon…”
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