Search Results - "del Agua Borniquel, J."

A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions by Sasaki, Y., Ritzenthaler, R., De Keersgieter, A., Chiarella, T., Kubicek, S., Rosseel, E., Waite, A., del Agua Borniquel, J., Colombeau, B., Chew, S. A., Kim, M. S., Schram, T., Demuynck, S., Vandervorst, W., Horiguchi, N., Mocuta, D., Mocuta, A., Thean, A. V.-Y

“…We compare As and P extension implants for NMOS Si bulk FinFETs with 5nm wide fins. P implanted FinFETs shows improved I ON , +15% with Room Temperature (RT)…”
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Process control & integration options of RMG technology for aggressively scaled devices by Veloso, A., Higuchi, Y., Chew, S. A., Devriendt, K., Ragnarsson, L., Sebaai, F., Schram, T., Brus, S., Vecchio, E., Kellens, K., Rohr, E., Eneman, G., Simoen, E., Cho, M. J., Paraschiv, V., Crabbe, Y., Shi, X., Tielens, H., Van Ammel, A., Dekkers, H., Favia, P., Geypen, J., Bender, H., Phatak, A., del Agua Borniquel, J., Xu, K., Allen, M., Liu, C., Xu, T., Yoo, W. S., Thean, A., Horiguchi, N.

“…We report on aggressively scaled RMG-HKL devices, with tight low-V T distributions [σ(V Tsat ) ~ 29mV (PMOS), ~ 49mV (NMOS) at L gate ~35nm] achieved through…”
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Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation by Everaert, J-L, Schaekers, M., Yu, H., Wang, L-L, Hikavyy, A., Date, L., del Agua Borniquel, J., Hollar, K., Khaja, F. A., Aderhold, W., Mayur, A. J., Lee, J. Y., van Meer, H., Jiang, Y-L, De Meyer, K., Mocuta, D., Horiguchi, N.

“…We report record breaking values for PMOS source drain (S/D) contact resistivity, ρ c <; 10 -9 Ω·cm 2 . These were obtained by shallow Ga ion implantation on…”
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Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation by Lin-Lin Wang, Hao Yu, Schaekers, M., Everaert, J.-L, Franquet, A., Douhard, B., Date, L., del Agua Borniquel, J., Hollar, K., Khaja, F. A., Aderhold, W., Mayur, A. J., Lee, J. Y., van Meer, H., Mocuta, D., Horiguchi, N., Collaert, N., De Meyer, K., Yu-Long Jiang

“…Ga diffusion and activation in Si, SWGe 0.6 and Ge are studied comprehensively. Optimal Ga activation conditions for Si 0.4 Ge 0.6 and Ge feature a low thermal…”
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Fundamental study on the impact of C co-implantation on ultra shallow B juntions by Zschatzsch, G., Vandervorst, W., Hoffmann, T., Everaert, J.-L., del Agua Borniquel, J.I.

“…In this work, the impact of carbon co-implantation on ultra shallow boron - plasma - doping profiles has been investigated. C is used as a co-implant due to…”
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