A Tuneable Metal Gate Work Function Using Solid State Diffusion of Nitrogen

Saved in:

Bibliographic Details
Published in:	32nd European Solid-State Device Research Conference pp. 103 - 106
Main Authors:	Lander, R., Hooker, J., van Zijl, J., Roozeboom, F., Maas, M., de Tamminga, Y., Wolters, R.
Format:	Conference Proceeding
Language:	English
Published:	Bologna University of Bologna 2002
Subjects:	Annealing Applied sciences CMOS technology Dielectrics Electrodes Electronics Exact sciences and technology Implants Interfaces MOSFET circuits Nitrogen Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid state circuits Sputtering Tin Transistors Rapid thermal annealing MOSFET Work function Doping Transistor gate Nitrogen addition Diffusion Dielectric metal interface
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISBN:	8890084782 9788890084782
DOI:	10.1109/ESSDERC.2002.194880