Search Results - "de Gendt, S."

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C by Chanson, R., Zhang, L., Naumov, S., Mankelevich, Yu. A., Tillocher, T., Lefaucheux, P., Dussart, R., Gendt, S. De, Marneffe, J.-F. de

“…The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and…”
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Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing by Nourbakhsh, A, Cantoro, M, Klekachev, A, Clemente, F, Sorée, B, van der Veen, M. H, Vosch, T, Stesmans, A, Sels, B, De Gendt, S

“…The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic,…”
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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization by Stesmans, A., Iacovo, S., Chiappe, D., Radu, I., Huyghebaert, C., De Gendt, S., Afanas’ev, V. V.

“…A low-temperature electron spin resonance study has been carried out on large-area high-purity polycrystalline two-dimensional few monolayer (ML) 2H MoS 2…”
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Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer by Wyndaele, P.-J., de Marneffe, J.-F., Sergeant, S., de la Rosa, C. J. L., Brems, S., Caro, A. M., De Gendt, S.

“…The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material…”
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Deposition of HfO2 on germanium and the impact of surface pretreatments by Van Elshocht, S., Brijs, B., Caymax, M., Conard, T., Chiarella, T., De Gendt, S., De Jaeger, B., Kubicek, S., Meuris, M., Onsia, B., Richard, O., Teerlinck, I., Van Steenbergen, J., Zhao, C., Heyns, M.

“…The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally…”
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Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks by Carter, R. J., Cartier, E., Kerber, A., Pantisano, L., Schram, T., De Gendt, S., Heyns, M.

“…We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si…”
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Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices by Van Elshocht, S., Caymax, M., Conard, T., De Gendt, S., Hoflijk, I., Houssa, M., De Jaeger, B., Van Steenbergen, J., Heyns, M., Meuris, M.

“…We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and…”
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Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy by Nohira, H., Tsai, W., Besling, W., Young, E., Petry, J., Conard, T., Vandervorst, W., De Gendt, S., Heyns, M., Maes, J., Tuominen, M.

“…The atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness…”
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Estimation of fixed charge densities in hafnium-silicate gate dielectrics by Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

“…In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was demonstrated by varying both the SiO 2…”
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Towards an understanding and control of cavitation activity in 1 MHz ultrasound fields by HAUPTMANN, M, STRUYF, H, MERTENS, P, HEYNS, M, DE GENDT, S, GLORIEUX, C, BREMS, S

“…Various industrial processes such as sonochemical processing and ultrasonic cleaning strongly rely on the phenomenon of acoustic cavitation. As the occurrence…”
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The preperitoneal memory-ring patch for inguinal hernia: a prospective multicentric feasibility study by Berrevoet, F., Sommeling, C., De Gendt, S., Breusegem, C., de Hemptinne, B.

“…Purpose To evaluate the feasibility, the reproducibility, the safety and the efficacy of a recently introduced preperitoneal memory-ring patch (Polysoft ® ,…”
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Prevalence of pancreatic exocrine insufficiency after pancreatic surgery measured by 13C mixed triglyceride breath test: A prospective cohort study by Hartman, V., Roeyen, E., Bracke, B., Huysentruyt, F., De Gendt, S., Chapelle, T., Ysebaert, D., Hendrikx, B., Roeyen, G.

“…Patients undergoing pancreatic surgery are at risk of pancreatic exocrine insufficiency (PEI) and needing pancreatic enzyme replacement therapy (PERT). This…”
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Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy by Hardy, A., Adelmann, C., Van Elshocht, S., Van den Rul, H., Van Bael, M.K., De Gendt, S., D’Olieslaeger, M., Heyns, M., Kittl, J.A., Mullens, J.

“…Grazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf 4+, Sc 3+ and Dy 3+oxides, due to its…”
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Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate by Ahmed, I., Korytov, M., Sergeant, S., Nuytten, T., Conard, T., De Gendt, S., Merckling, C.

“…BaBiO3 has attracted a lot of research attention since it was discovered as the parent compound for the high-Tc superconducting BaPbxBi1–xO3 and Ba1–xKxBiO3…”
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Plasma induced damage mitigation in spin-on self-assembly based ultra low-k dielectrics using template residues by Krishtab, M., de Marneffe, J.-F., De Gendt, S., Baklanov, M. R.

“…This paper describes an approach for the reduction of plasma-induced damage in self-assembly based porous ultra low-k organosilica dielectrics. The concept is…”
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NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration by Ahopelto, J., Ardila, G., Baldi, L., Balestra, F., Belot, D., Fagas, G., De Gendt, S., Demarchi, D., Fernandez-Bolaños, M., Holden, D., Ionescu, A.M., Meneghesso, G., Mocuta, A., Pfeffer, M., Popp, R.M., Sangiorgi, E., Sotomayor Torres, C.M.

“…•This paper introduces the new NanoElectronics Roadmap for Europe covering topics from Nanodevices beyond CMOS and Innovative Materials to system Integration…”
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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates by Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.

“…As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material…”
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Miscibility of amorphous ZrO2–Al2O3 binary alloy by Zhao, C., Richard, O., Bender, H., Caymax, M., De Gendt, S., Heyns, M., Young, E., Roebben, G., Van Der Biest, O., Haukka, S.

“…Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2–Al2O3 binary alloy high-k dielectric layer. In the present…”
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Damage free integration of ultralow-k dielectrics by template replacement approach by Zhang, L., de Marneffe, J.-F., Heylen, N., Murdoch, G., Tokei, Z., Boemmels, J., De Gendt, S., Baklanov, M. R.

“…Cu/low-k integration by conventional damascene approach is becoming increasingly difficult as critical dimensions scale down. An alternative integration scheme…”
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Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks by Houssa, M., Aoulaiche, M., Van Elshocht, S., De Gendt, S., Groeseneken, G., Heyns, M. M.

“…The shift of the threshold voltage, Vth, of p-channel metal-oxide-semiconductor field-effect transistors with HfSiON gate stacks, subjected to negative bias…”
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