Search Results - "d’Avitaya, F.A."

Effect of the electrolyte temperature on the formation and structure of porous anodic titania film by Lazarouk, S.K., Sasinovich, D.A., Kupreeva, O.V., Orehovskaia, T.I., Rochdi, N., d'Avitaya, F. Arnaud, Borisenko, V.E.

“…The porous titania growth during electrochemical anodization of titanium films and foils in the 0.1M ammonium fluoride (FNH4) solution in ethyleneglycol has…”
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Effects of Morphology on Stability, Electronic, and Optical Properties of Rutile TiO2 Nanowires by Migas, D. B, Shaposhnikov, V. L, Borisenko, V. E, Arnaud D’Avitaya, F

“…By means of first principles calculations we show that morphology of TiO2 nanowires in the rutile phase turns out to be important in their stability and band…”
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Different architectures of relaxed Si 1− x Ge x /Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics by Raïssi, M., Regula, G., Hadj Belgacem, C., Rochdi, N., Bozzo-Escoubas, S., Coudreau, C., Holländer, B., Fnaiech, M., D'Avitaya, F.A., Lazzari, J.-L.

“…A detailed characterization of SiGe thin layers grown by low-pressure chemical vapor deposition (LP-CVD) on different types of Si buffer layers (BLs) is…”
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Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics by RAÏSSI, M, REGULA, G, HADJ BELGACEM, C, ROCHDI, N, BOZZO-ESCOUBAS, S, COUDREAU, C, HOLLÄNDER, B, FNAIECH, M, D'AVITAYA, F. A, LAZZARI, J.-L

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Growth and oxidation of Al thin films deposited on Ag(111) by Oughaddou, H., Vizzini, S., Aufray, B., Ealet, B., Gay, J.-M., Bibérian, J.-P., d'Avitaya, F.A.

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Strain-balanced Si1-xGex/Si type II quantum wells for 1.55 μm detection and emission by SFINA, N, LAZZARI, J.-L, DERRIEN, J, D'AVITAYA, F. A, SAID, M

“…This work deals with the optoelectronic properties of heterostructures built on type II Si1−xGex/Si strained quantum wells grown on relaxed Si1−yGey/Si (001)…”
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Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface by Vizzini, S., Oughaddou, H., Leandri, C., Lazarov, V.K., Kohn, A., Nguyen, K., Coudreau, C., Biberian, J.-P., Ealet, B., Lazzari, J.-L., d'Avitaya, F.A., Aufray, B.

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Growth and optical properties of Ge/Si quantum dots formed on patterned [formula omitted] substrates by Nguyen, Lam.H, Nguyen-Duc, T.K, Le Thanh, V, d'Avitaya, F.A, Derrien, J

“…Single and stacked layers of Ge/Si quantum dots were grown in SiO 2 windows patterned by electron-beam lithography on oxidized Si (0 0 1) substrates. The…”
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Structural characterization of Si 1− xGe x/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition by Bozzo, S., Lazzari, J.-L., Holländer, B., Coudreau, C., Ronda, A., Mantl, S., D'Avitaya, F.A., Derrien, J.

“…We present SiGe/Si (001) heteroepitaxy performed in a commercial Chemical Vapor Deposition (CVD) cold-wall vertical reactor using SiH 4 and GeH 4 as precursor…”
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Structural characterization of Si1-xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition by BOZZO, S, LAZZARI, J.-L, HOLLÄNDER, B, COUDREAU, C, RONDA, A, MANTL, S, D'AVITAYA, F. A, DERRIEN, J

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Growth and oxidation of aluminum thin films deposited on Ag(1 1 1) by Oughaddou, H., Vizzini, S., Aufray, B., Ealet, B., Gay, J.-M., Bibérian, J.-P., d’Avitaya, F.A.

“…Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were used to study the first steps of growth and oxidation of aluminum on Ag(1 1…”
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Role of point defects on the optical properties of self-assembled Ge/Si hut clusters by Nguyen-Duc, T.K., Le Thanh, V., Nguyen, Lam. H., Boucaud, P., Yam, V., Bouchier, D., d’Avitaya, F.A., Derrien, J.

“…Structural and optical characterizations via reflection high-energy electron diffraction and atomic force microscopy have been combined to investigate the…”
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Kinetic formation and optical properties of self-assembled Ge/Si hut clusters by Nguyen-Duc, T.K., Le Thanh, V., Nguyen, L.H., d’Avitaya, F.A., Derrien, J.

“…Structural and optical characterizations via reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy have been…”
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A novel Si/sub 1-x/Ge/sub x//Si MOSFET by Li Kaicheng, Sun Weifeng, Zhang Jing, Wen Yao, Huang Yan, d'Avitaya, F.A., Xiangdong Wu, Yin Xianwen

“…A novel Si/sub 1-x/Ge/sub x/ channel Metal Oxide Semiconductor field effect transistor (MOSFET) is described. Si/sub 1-x/Ge/sub x/ alloy used was grown by…”
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Reactive ion etching of Si/sub 1-x/Ge/sub x/ alloy with hydrogen bromide by Li Kaicheng, Sun Weifeng, Wang Qingping, Zhang Jing, Wen Yao, Huang Yan, d'Avitaya, F.A., Guo Lin, Xiangdong Wu

“…The reactive ion etching (RIE) of Si/sub 1-x/Ge/sub x/ alloy with hydrogen bromide is described. The technologies of producing Si/sub 1-x/Ge/sub x/ devices are…”
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