Search Results - "Zvonkov, Boris N."

Optically Induced Spin Electromotive Force in a Ferromagnetic–Semiconductor Quantum Well Structure by Rozhansky, Igor V., Kalitukha, Ina V., Dimitriev, Grigorii S., Ken, Olga S., Dorokhin, Mikhail V., Zvonkov, Boris N., Arteev, Dmitri S., Averkiev, Nikita S., Korenev, Vladimir L.

“…Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A…”
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Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition by Danilov, Yuri A, Vikhrova, Olga V, Kudrin, Alexey V, Zvonkov, Boris N

“…The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures…”
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Magnetic-field-induced quantum Hall effect – Hall insulator transition and hopping conductivity in InAs/GaAs quantum dot layers by Kulbachinskii, Vladimir A., Lunin, Roman A., Rogozin, Vasili A., Zvonkov, Boris N., Filatov, Dmitriy O., de Visser, Anne

“…We have investigated the resistance in the temperature range T=0.4– 300 K and magnetotransport in magnetic fields up to 35 T in InAs/GaAs quantum dot layers…”
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Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure by Rozhansky, Igor V, Kalitukha, Ina V, Dimitriev, Grigorii S, Ken, Olga S, Dorokhin, Mikhail V, Zvonkov, Boris N, Arteev, Dmitri S, Averkiev, Nikita S, Korenev, Vladimir L

“…Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A…”
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Magnetic-field-induced quantum Hall—insulator transition and persistent photoconductivity in InAs/GaAs quantum dot layers by Kulbachinskii, Vladimir A., Lunin, Roman A., Rogozin, Vasili A., Kytin, Vladimir G., Zvonkov, Boris N., Nekorkin, Sergey M., Filatov, Dmitriy O., de Visser, Anne

“…We have investigated the temperature dependence of resistance in the temperature range T=0.07– 300 K and in magnetic field up to 35 T in InAs/GaAs quantum dot…”
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First experiments and prospects of intracavity difference -frequency generation of mid/far-infrared and terahertz radiation in diode lasers by Aleshkin, Vladimir Ya, Kukushkin, Vladimir A., Maremyanin, Kirill V., Morozov, Sergey V., Nekorkin, Sergey M., Zvonkov, Boris N., Andrianov, Alexey V., Belyanin, Alexey A., Biryukov, Anton A., Dubinov, Alexander A., Ershov, Alexey V., Gavrilenko, Vladimir I., Kocharovsky, Vitaly V., Kocharovsky, Vladimir V.

“…Our experimental and theoretical investigations in the field of new semiconductor sources of coherent mid/far-IR radiation based on the intracavity nonlinear…”
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Observation of room-temperature intracavity difference-frequency generation in butt-joint diode lasers by Aleshkin, V.Ya, Belyanin, A.A., Biryukov, A.A., Dubinov, A.A., Ershov, A.V., Gavrilenko, V.I., Kocharovsky, V.V., Kocharovsky, V.V., Maremyanin, K.V., Morozov, S.V., Nekorkin, S.M., Zvonkov, B.N.

“…We obtain, for the first time to our knowledge, the room-temperature intracavity difference-frequency generation in the mid-infrared range (around 10 mum…”
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