Search Results - "Zvanut, M.E."

Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals by Fedorov, V.V., Konak, T., Dashdorj, J., Zvanut, M.E., Mirov, S.B.

“…•Strong bleaching of the divalent state of chromium and iron metals was studied.•The IR luminescence quantum yield was measured under photo-ionization…”
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Nitrogen-related point defect in 4H and 6H SiC by Zvanut, M.E., van Tol, J.

“…A nitrogen-related pair defect is studied as a function of doping density in 4H and 6H SiC. Electron paramagnetic resonance measurements verify that one…”
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Compensating defects in high Al content Al0.85Ga0.15N films grown on an AlN substrate by Zvanut, M.E., Paudel, Subash, Page, Ryan, Cho, Yongjin, Xing, H. Grace, Jena, Debdeep

“…Al x Ga 1-x N is a promising semiconductor for power electronics, but the mechanism for the conductivity produced by Si doping is controversial. In this work,…”
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The acceptor level for vanadium in 4H and 6H SiC by Zvanut, M.E., Lee, Wonwoo, Mitchel, W.C., Mitchell, W.D., Landis, G.

“…Electron paramagnetic resonance (EPR) and temperature-dependent Hall measurements were performed on seven different vanadium-doped semi-insulating SiC samples…”
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Absorption and photoluminescence studies of CdGa 2S 4:Cr by Johnson, M.B, Mirov, S.B, Fedorov, V, Zvanut, M.E, Harrison, J.G, Badikov, V.V, Shevirdyaeva, G.S

“…The potential of using ternary defect chalcopyrites as laser active materials is investigated by performing absorption, photoluminescence, and EPR studies of…”
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High temperature Hall effect measurements of semi-insulating 4H–SiC substrates by Mitchel, W.C., Mitchell, William D., Zvanut, M.E., Landis, G.

“…High temperature Hall effect and resistivity measurements have been made on semi-insulating 4H–SiC samples. Both vanadium doped and undoped materials have been…”
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Absorption and photoluminescence studies of CdGa2S4:Cr by Johnson, M.B, Mirov, S.B, Fedorov, V, Zvanut, M.E, Harrison, J.G, Badikov, V.V, Shevirdyaeva, G.S

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Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC by Konovalov, V.V, Zvanut, M.E, Tsvetkov, V.F, Jenny, J.R, Müller, St.G, Hobgood, H.McD

“…An intrinsic defect (ID) has been identified in as-grown 4H–SiC by electron paramagnetic resonance (EPR). The EPR parameters of an ID measured in our nominally…”
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Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC by Macfarlane, P J, Zvanut, M E

“…Electron paramagnetic resonance studies show that defects are activated in oxidized 3C-SiC and 6H-SiC by heat-treatments at temperatures greater than 800…”
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Dangling bond defects in SiC: the dependence on oxidation time by Macfarlane, P.J., Zvanut, M.E.

“…Electron paramagnetic resonance is used to study a near surface defect in oxidized 4H 6H SiC substrates and 3C SiC epitaxial layers. The defect is observed…”
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Properties of E δ′ center in microelectronic grade oxide films by Zvanut, M.E., Macfarlane, P.J.

“…The paper focuses on two properties of the multiple oxygen vacancy E δ' center observed in microelectronic grade oxide films. By monitoring the moisture in the…”
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The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films by Zvanut, M.E., Chun, Wang, Stahlbush, R.E.

“…Vacuum ultraviolet hole injection was used to study the initial trapping properties of three different types of buried oxides, SIMOX, Unibond, and polySi/SiO…”
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Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides by Zvanut, M.E., Benefield, C., Hughes, H.L.

“…We describe electrical and spectroscopic measurements of SIMOX subjected to supplemental oxygen implantation and standard 1000/spl deg/C post implantation…”
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SIMOX with epitaxial silicon: point defects and positive charge by Zvanut, M.E., Stahlbush, R.E., Carlos, W.E., Hughes, H.L., Lawrence, R.K.

“…Electron paramagnetic resonance (EPR), capacitance-voltage (CV) and point contact transistor measurements are used to investigate the radiation response of the…”
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High temperature Hall effect measurements of semi-insulating 4H-SiC substrates by Mitchel, W.C., Mitchell, W.D., Zvanut, M.E.

“…The paper presents the temperature dependent measurements of the Hall effect along with the resistivity for a variety of high purity and vanadium doped SI…”
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Electrical-field-driven electron self-exchange in a mixed-valent osmium(II/III) bipyridine polymer: solid-state reactions of low exothermicity by Jernigan, J. C, Surridge, Nigel A, Zvanut, M. E, Silver, M, Murray, Royce W

“…The dynamics of electrical-field-driven solid-state electron transfers between Os(II) and Os(III) sites in the 1:1 mixed-valent redox polymer…”
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