Search Results - "Zvanut, M. E."

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN by Zvanut, M. E., Hanle, Jackson P., Paudel, Subash, Page, Ryan, Savant, Chandrashekhar, Cho, Yongjin, Xing, H. Grace, Jena, Debdeep

“…High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type…”
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Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method by Dashdorj, J., Zvanut, M. E., Bockowski, M.

“…A point defect in acceptor‐doped bulk free standing GaN grown by the high nitrogen pressure solution method (HNPS) was investigated using electron paramagnetic…”
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Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals by Fedorov, V.V., Konak, T., Dashdorj, J., Zvanut, M.E., Mirov, S.B.

“…•Strong bleaching of the divalent state of chromium and iron metals was studied.•The IR luminescence quantum yield was measured under photo-ionization…”
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Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors by Zvanut, M. E., Mollik, Md Shafiqul Islam, Siford, Mackenzie, Bhandari, Suman

“…Ultrawide bandgap semiconductors (UWBGs) provide great promise for optical devices operating in the near to deep ultraviolet, and recently they have become a…”
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Optical transitions of neutral Mg in Mg-doped β-Ga2O3 by Bhandari, Suman, Lyons, John L., Wickramaratne, Darshana, Zvanut, M. E.

“…Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power electronic devices. The present work investigates optical transitions of…”
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High-Field Phenomena of Qubits by van Tol, Johan, Morley, G. W., Takahashi, S., McCamey, D. R., Boehme, C., Zvanut, M. E.

“…Electron and nuclear spins are very promising candidates to serve as quantum bits (qubits) for proposed quantum computers, as the spin degrees of freedom are…”
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Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates by Zvanut, M. E., Paudel, Subash, Glaser, E. R., Iwinska, M., Sochacki, T., Bockowski, M.

“…Carbon doping is a viable approach for compensating the unintentional donors in GaN and achieving semi-insulating substrates necessary for high-frequency,…”
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A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy by LEE, Wonwoo, ZVANUT, M. E

“…Optical admittance spectroscopy (OAS), supported by electron paramagnetic resonance (EPR) measurements, is used to identify the controversial vanadium acceptor…”
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Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements by Watkins, R., Fedorov, V. V., Zvanut, M. E., Bhandari, S., Barnakov, Y., Mirov, S. B.

“…Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key…”
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A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition by Zvanut, M. E., Ngetich, G., Chung, H. J., Polyakov, A. Y., Skowronski, M.

“…The understanding of the structure and associated defect level of a point defect in SiC is important because the material is to be used both as a semiconductor…”
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Incorporation of Mg in Free-Standing HVPE GaN Substrates by Zvanut, M. E., Dashdorj, J., Freitas, J. A., Glaser, E. R., Willoughby, W. R., Leach, J. H., Udwary, K.

“…Mg, the only effective p -type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and…”
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The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy by MATLOCK, D. M, ZVANUT, M. E, HAIYAN WANG, DIMAIO, Jeffrey R, DAVIS, R. F, VAN NOSTRAND, J. E, HENRY, R. L, KOLESKE, Daniel, WICKENDEN, Alma

“…Electron paramagnetic resonance (EPR) spectroscopy is used to study the unpassivated Mg-related acceptor in GaN films. As expected, the trends observed before…”
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The acceptor level for vanadium in 4H and 6H SiC by Zvanut, M.E., Lee, Wonwoo, Mitchel, W.C., Mitchell, W.D., Landis, G.

“…Electron paramagnetic resonance (EPR) and temperature-dependent Hall measurements were performed on seven different vanadium-doped semi-insulating SiC samples…”
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Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC by ALVAREZ, D, KONOVALOV, V. V, ZVANUT, M. E

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HF chemical etching of SiO2 on 4H and 6H SiC by Johnson, M. B., Zvanut, M. E., Richardson, Otha

“…Thickness and etch rate of SiO2 films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO2/Si samples. The data confirm that…”
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Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study by Konovalov, V V, Zvanut, M E

“…Electron paramagnetic resonance (EPR) has been employed to examine thermo- and photo-activated interactions between as-grown intrinsic defects and…”
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Nitrogen-related point defect in 4H and 6H SiC by Zvanut, M.E., van Tol, J.

“…A nitrogen-related pair defect is studied as a function of doping density in 4H and 6H SiC. Electron paramagnetic resonance measurements verify that one…”
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Near-interface trapped charge induced by fowler-nordheim injection in hydrogen or argon annealed MOS capacitors by LIN, H, ZVANUT, M. E

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Dangling bond defects in SiC: the dependence on oxidation time by Macfarlane, P.J., Zvanut, M.E.

“…Electron paramagnetic resonance is used to study a near surface defect in oxidized 4H 6H SiC substrates and 3C SiC epitaxial layers. The defect is observed…”
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The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance by Zvanut, M. E., Konovalov, V. V.

“…Photoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic…”
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