Search Results - "Zucker, J. E."

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    Strained quantum wells for polarization-independent electrooptic waveguide switches by Zucker, J.E., Jones, K.L., Chiu, T.H., Tell, B., Brown-Goebeler, K.

    Published in Journal of lightwave technology (01-12-1992)
    “…A polarization-independent quantum well waveguide switch is demonstrated. By altering the composition and hence the degree of built-in strain, the bandgap of…”
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    Electro-optic phase modulation in GaAs/AlGaAs quantum well waveguides by ZUCKER, J. E, HENDRICKSON, T. L, BURRUS, C. A

    Published in Applied physics letters (21-03-1988)
    “…We present the first absolute measurements of the electric-field-induced refractive index change in GaAs/AlGaAs quantum well waveguides. Phase and intensity…”
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    Early Entrant Protection in Approval Regulation: Theory and Evidence from FDA Drug Review by Carpenter, Daniel, Moffitt, Susan I., Moore, Colin D., Rynbrandt, Ryan T., Ting, Michael M., Yohai, Ian, Zucker, Evan James

    Published in Journal of law, economics, & organization (01-12-2010)
    “…Early entrant protection in approval regulation exists when the first incumbents in an exclusive market niche receive more favorable regulatory treatment than…”
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    Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP by Camargo Silva, M.T., Zucker, J.E., Carrion, L.R., Joyner, C.H., Dentai, A.G.

    “…We demonstrate the necessary conditions for successful metalorganic vapor phase epitaxy (MOVPE) growth of InGaAs-InP-based heterojunction bipolar transistor…”
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    Optical vibrational modes and electron-phonon interaction in GaAs quantum wells by ZUCKER, J. E, PINCZUK, A, CHEMLA, D. S, GOSSARD, A, WIEGMANN, W

    Published in Physical review letters (01-01-1984)
    “…Phonons active in resonant Raman scattering have been discovered from GaAs quantum-well heterostructures that are actually the optical vibrations of a thin…”
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    Compact, low-crosstalk, and low-propagation-loss quantum-well Y-branch switches by Sneh, A., Zucker, J.E., Miller, B.I.

    Published in IEEE photonics technology letters (01-12-1996)
    “…We demonstrate a quantum-well Y-branch switch designed for low crosstalk, low propagation loss, and compact size. The active waveguide core is composed of…”
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    Compact directional coupler switches using quantum well electrorefraction by ZUCKER, J. E, JONES, K. L, YOUNG, M. G, MILLER, B. I, KOREN, U

    Published in Applied physics letters (27-11-1989)
    “…We have utilized excitonic electrorefraction in reverse-biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active…”
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    Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators by Chen, Y., Zucker, J.E., Sauer, N.J., Chang, T.Y.

    Published in IEEE photonics technology letters (01-10-1992)
    “…Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown…”
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    Polarization-insensitive InP-based MQW digital optical switch by Sneh, A., Zucker, J.E., Miller, B.I., Stulz, L.W.

    Published in IEEE photonics technology letters (01-12-1997)
    “…A polarization-insensitive InP-based p-i-n multiple-quantum-well switch is demonstrated for the first time. Polarization-insensitive switching and loss are…”
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    Large blueshifting of InGaAs/InP quantum-well band gaps by ion implantation by ZUCKER, J. E, TELL, B, JONES, K. L, DIVINO, M. D, BROWN-GOEBELER, K. F, JOYNER, C. H, MILLER, B. I, YOUNG, M. G

    Published in Applied physics letters (15-06-1992)
    “…We demonstrate that phosphorous ion implantation in InGaAs/InP quantum wells can be used to produce large (from 1550 to 1200 nm) blueshifts of the band edge…”
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    Quantum well waveguide intensity modulator at visible wavelengths using CdZnTe/ZnTe quantum wells by LEE, D, ZUCKER, J. E, DIVINO, M. D, AUSTIN, R. F, FELDMAN, R. D, JONES, K. L, JOHNSON, A. M

    Published in Applied physics letters (07-10-1991)
    “…We demonstrate the first waveguide intensity modulator for visible wavelengths based on the quantum-confined Stark effect. The active waveguide core is…”
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    Weighted-coupling Y-branch optical switch in InGaAs/InGaAlAs quantum well electron transfer waveguides by Khan, M.N., Zucker, J.E., Chang, T.Y., Sauer, N.J., Divine, M.D.

    Published in IEEE photonics technology letters (01-03-1994)
    “…We demonstrate the first weighted-coupling Y-branch switch in semiconductors. The active waveguide core contains an InGaAs/InGaAlAs chopped quantum well…”
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    Quasi-continuous lasing from optically pumped CdZnTe/ZnTe multiple quantum wells at room temperature by LEE, D, JOHNSON, A. M, ZUCKER, J. E, BURRUS, C. A, FELDMAN, R. D, AUSTIN, R. F

    Published in Applied physics letters (10-02-1992)
    “…We demonstrate the first room-temperature operation of optically pumped II-VI quantum-well lasers in a quasi-continuous mode. This result shows promise for…”
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    Low-voltage-tunable distributed Bragg reflector using InGaAs/GaAs quantum wells by Blum, O., Zucker, J.E., Wu, X., Gulden, K.H., Sohn, H., Gustafson, T.K., Smith, J.S.

    Published in IEEE photonics technology letters (01-06-1993)
    “…The operation of the first multiple quantum well (MQW) voltage-tunable distributed Bragg reflector (DBR) with inter-digitated contacts is discussed…”
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    Quantum well electron transfer waveguide with high coupling efficiency to single-mode fiber by Khan, H.N., Zucker, J.E., Chang, T.Y., Sauer, N.J., Burrus, C.A., Presby, H.M.

    Published in IEEE photonics technology letters (01-02-1995)
    “…We demonstrate low fiber-waveguide coupling loss in a large optical mode barrier reservoir and quantum well electron transfer (BRAQWET) modulator. Electrooptic…”
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    Room-temperature excitonic saturation in CdZnTe/ZnTe quantum wells by LEE, D, ZUCKER, J. E, JOHNSON, A. M, FELDMAN, R. D, AUSTIN, R. F

    Published in Applied physics letters (10-09-1990)
    “…We present the first measurements of room-temperature excitonic absorption saturation in a II-VI semiconductor quantum well. Strong room-temperature excitonic…”
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    Loss reduction in InGaAs/InGaAlAs quantum well electron transfer waveguides using ion implantation by Zucker, J.E., Divine, M.D., Chang, T.Y., Sauer, N.J.

    Published in IEEE photonics technology letters (01-09-1994)
    “…We demonstrate that phosphorous ion implantation is an effective means of blue-shifting the absorption edge in InGaAs/InGaAlAs barrier, reservoir and quantum…”
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    Interferometric quantum well modulators with gain by Zucker, J.E., Jones, K.L., Miller, B.I., Young, M.G., Koren, U., Tell, B., Brown-Goebeler, K.

    Published in Journal of lightwave technology (01-07-1992)
    “…Details on the design, fabrication and properties of the first interferometric intensity modulators with monolithically integrated optical gain are presented…”
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    Masked growth of InGaAsP-based quantum wells for optoelectronic device applications by CHEN, Y, CHIU, T. H, ZUCKER, J. E, CHU, S. N. G

    Published in Applied physics letters (05-04-1993)
    “…We investigate selective area growth of lattice-matched InGaAsP/InP, and strained InGaAs/InP and InAsP/InP multiple quantum wells on SiO2-masked InP substrate…”
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