Search Results - "Zubrilov, A. S"

ZnO/GaN heterostructure for LED applications by Titkov, I.E., Delimova, L.A., Zubrilov, A.S., Seredova, N.V., Liniichuk, I.A., Grekhov, I.V.

“…White electroluminescence (EL) from ZnO/GaN structures fabricated by pulsed laser deposition of Zn:In onto GaN:Mg/GaN structures MOCVD-grown on Al 2 O 3…”
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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

“…The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77–300 K. It is found that the efficiency droop is due to a…”
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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates by Kuznetsov, N. I., Nikolaev, A. E., Zubrilov, A. S., Melnik, Yu. V., Dmitriev, V. A.

“…Fabrication of high-performance GaN microwave devices, which are the excellent candidates for new generation of high-power solid-state components, requires…”
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Spontaneous and stimulated emission from photopumped GaN grown on SiC by Zubrilov, A. S., Nikolaev, V. I., Tsvetkov, D. V., Dmitriev, V. A., Irvine, K. G., Edmond, J. A., Carter, C. H.

“…Photoluminescence of GaN layers grown on 6H–SiC substrates was studied in the temperature range 77–900 K. GaN layers were grown by metalorganic chemical vapor…”
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Growth of AlGaN on Si(111) by gas source molecular beam epitaxy by Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., Temkin, H.

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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire by Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.

“…The intense absorption of CO 2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by…”
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Investigation of n-GaN/p-SiC/n-SiC heterostructures by Lebedev, A.A., Ledyaev, O.Yu, Strel’chuk, A.M., Kuznetsov, A.N., Nikolaev, A.E., Zubrilov, A.S., Volkova, A.A.

“…With the use of sublimation epitaxy in vacuum and hydride vapor phase epitaxy (HVPE) a heterostructure n-GaN/p-6H-SiC/n-SiC on base top of n+6H-SiC substrate…”
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Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates by Mynbaev, K. D., Mynbaeva, M. G., Zubrilov, A. S., Seredova, N. V.

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Two modes of HVPE growth of GaN and related macrodefects by Voronenkov, V. V, Bochkareva, N. I, Gorbunov, R. I, Latyshev, P. E, Lelikov, Y. S, Rebane, Y. T, Tsyuk, A. I, Zubrilov, A. S, Popp, U. W, Strafela, M, Strunk, H. P, Shreter, Y. G

“…Phys. Status Solidi C 10 (2013) 468-471 GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed:…”
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Electrical Properties of n-GaN∕p-SiC Heterojunctions by Ledyaev, O. Yu

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Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates by Nikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., Chin, A. K.

“…Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of…”
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AlGaN pn junctions by Dmitriev, V. A., Irvine, K., Carter, C. H., Zubrilov, A. S., Tsvetkov, D. V.

“…AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers…”
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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates by Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.

“…The physical and technological basics of the method used to lift off lightly and moderately doped n -GaN films from heavily doped n + -GaN substrates are…”
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Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy by Zubrilov, A. S., Melnik, Yu. V., Nikolaev, A. E., Jacobson, M. A., Nelson, D. K., Dmitriev, V. A.

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Waveguide properties of gallium, aluminum, and indium nitride heterostructures by Bugrov, V. E., Zubrilov, A. S.

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Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

“…The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77-300 K. It is found that the efficiency droop is due to a…”
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Properties of Si-Doped GaN Layers Grown by HVPE by Fomin, A.V., Nikolaev, A.E., Nikitina, I.P., Zubrilov, A.S., Mynbaeva, M.G., Kuznetsov, N.I., Kovarsky, A.P., Ber, B.Ja, Tsvetkov, D.V.

“…The n‐type doping of GaN by hydride vapor phase epitaxy (HVPE) using undoped single crystalline Si as a dopant source has been demonstrated. The doping has…”
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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

“…The mechanism of the internal quantum efficiency droop in InGaN/GaN structures with multiple quantum wells at current densities of up to 40 A cm −2 in…”
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Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions by Kalinina, E.V., Kholujanov, G.F., Zubrilov, A.S., Tsvetkov, D.V., Vatnik, M.P., Soloviev, V.A., Tretjakov, V.D., Kong, H., Dmitriev, V.A.

“…Electrical and luminescent characteristics of epitaxial 4H-SiC p-n junctions, both prior and after ion doping (ID) with Al, were studied. The implantation of…”
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Mechanism of the GaN LED efficiency falloff with increasing current by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

“…The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with…”
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