Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices

Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum chemically. It was found that direct correlations could be made between relative electrical activity and top-filled/lowest-empty molecular orbita...

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Bibliographic Details
Published in:	2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) pp. 159 - 162
Main Authors:	Aronowitz, S., Puchner, H., Zubcov, V.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2000
Subjects:	Boron Chemicals Implants Indium Interface states Large scale integration MOS devices Nitrogen Semiconductor process modeling Threshold voltage
Online Access:	Get full text
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Summary:	Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum chemically. It was found that direct correlations could be made between relative electrical activity and top-filled/lowest-empty molecular orbitals obtained with a model silicon lattice system. The trend in activation explained the device behavior observed when retrograde indium channels in NMOS devices were created with nitrogen present to control gate oxide growth.
ISBN:	9780780362796 0780362799
DOI:	10.1109/SISPAD.2000.871232