Search Results - "Zou, W.X."
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Aspergillus fumigatus CY018, an endophytic fungus in Cynodon dactylon as a versatile producer of new and bioactive metabolites
Published in Journal of biotechnology (09-11-2004)“…Aspergillus fumigatus CY018 was recognized as an endophytic fungus for the first time in the leaf of Cynodon dactylon. By bioassay-guided fractionation, the…”
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Journal Article -
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1.0-mA-threshold uncoated lasers by impurity-induced disordering
Published in IEEE photonics technology letters (01-06-1993)“…Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low…”
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Journal Article -
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Antifungal activity of Artemisia annua endophyte cultures against phytopathogenic fungi
Published in Journal of biotechnology (12-07-2001)“…Artemisia annua, well recognized for its production of antimalarial drug artemisinin, is seldom attacked by any of phytopathogenic fungi, which could be…”
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Journal Article -
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Antifungal and new metabolites of Myrothecium sp. Z16, a fungus associated with white croaker Argyrosomus argentatus
Published in Journal of applied microbiology (01-01-2006)“…Aims: Fungal infection is still a life‐threatening risk for the immunocompromised population such as AIDS patients and those who receive treatments with…”
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Journal Article -
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High-power mode-locked semiconductor lasers using flared waveguides
Published in Applied physics letters (26-06-1995)“…We describe the use of flared waveguide diode lasers for obtaining increased output power under mode-locked operation. The flared waveguide expands the optical…”
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Very-low-threshold, strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well lasers defined by impurity-induced disordering
Published in IEEE photonics technology letters (01-05-1991)“…Strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well (InGaAs-QW) stripe geometry lasers ( lambda approximately 9050 AA) were fabricated by impurity-induced…”
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Journal Article -
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Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift
Published in IEEE transactions on electron devices (01-12-1991)“…Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low…”
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Journal Article -
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Novel Monolithic Integration Of InGaAs-QW Laser And Intracavity Electroabsorption Modulator By Impurity-induced Disordering
Published in Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels (1992)Get full text
Conference Proceeding -
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Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion
Published in 13th IEEE International Semiconductor Laser Conference (1992)“…Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0…”
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Conference Proceeding -
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Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield
Published in LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics (1991)Get full text
Conference Proceeding -
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