Search Results - "Zimmermann, Claus G"
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Difference in space‐charge recombination of proton and electron irradiated GaAs solar cells
Published in Progress in photovoltaics (01-05-2019)“…GaAs component cells, representative of the middle cell in Ga0.5In0.5P/GaAs/Ge triple junction solar cells, were irradiated with protons and electrons of…”
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2
Determination of subcell I-V characteristics of multijunction solar cells using optical coupling
Published in Progress in photovoltaics (01-06-2016)“…A method for the determination of the subcell I–V characteristics of multijunction solar cells in the presence of optical coupling is presented and applied to…”
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3
Thermal runaway in multijunction solar cells
Published in Applied physics letters (10-06-2013)“…A small fraction of GaInP2/GaAs/Ge triple junction solar cells exposed to the 6× concentrated air mass zero spectrum at 523 K for 5 min was found to be…”
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4
Impact of Proton and Electron Irradiation-Induced Defects on the Dark Current of GaAs Solar Cells
Published in IEEE journal of photovoltaics (01-11-2019)“…The same amount of non-ionizing energy is deposited in GaAs solar cells through 1 MeV proton and electron radiation at specific fluence values. The defects…”
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5
Voltage‐dependent photocurrent in irradiated GaAs solar cells
Published in Progress in photovoltaics (01-05-2018)“…GaAs single junction cells, representative of the middle cell in triple junction Ga 0.5In 0.5P/GaAs/Ge cells, were irradiated with various fluences of 1‐ and…”
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6
Admittance Spectroscopy on Irradiated GaAs Component Cells: Defect Analysis and Characterization
Published in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (14-06-2020)“…Temperature-dependent admittance spectroscopy is shown to be a valuable method to perform defect characterization in standardized 2 cm × 2 cm component cells,…”
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Conference Proceeding -
7
Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement
Published in Progress in photovoltaics (01-09-2017)“…Characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga0.5In0.5P/GaAs/Ge solar cells were…”
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Performance Mapping of Multijunction Solar Cells Based on Electroluminescence
Published in IEEE electron device letters (01-08-2009)“…Electroluminescence intensity maps of all three subcells of space grade III-V multijunction cells were obtained with the help of dedicated imaging sensors at a…”
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9
Thermal runaway in multijunction solar cells
Published in 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) (01-06-2014)“…Certain GaInP 2 /GaInAs/Ge triple junction cells, when exposed to temperatures of 523 K under the 6x concentrated AM0 spectrum, developed a region of local…”
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Conference Proceeding -
10
Subcell Characterization in Multijunction Solar Cells Using Pulsed Light
Published in IEEE journal of photovoltaics (01-03-2017)“…The photocurrent versus open-circuit voltage characteristic of individual subcells in a multijunction solar cell can be measured by illuminating the subcell…”
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11
Electroluminescence imaging of III-V multijunction solar cells
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…The potential of electroluminescence imaging is demonstrated for large area III-V triple junction solar cells. The cells are modeled as two dimensional diode…”
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Conference Proceeding -
12
Series resistance mapping of III-V multijunction solar cells based on luminescence imaging
Published in 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) (01-06-2013)“…A method for spatially resolved series resistance measurements of Ga 0.5 In 0.5 P/Ga(In)As/Ge triple-junction solar cells based on electro- and…”
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Conference Proceeding -
13
Development and Qualification of the Eurostar Neo Solar Array
Published in 2019 European Space Power Conference (ESPC) (01-09-2019)“…Airbus is currently developing the Eurostar Neo telecommunication platform, supported by ESA in the frame of the ARTES 14 program. It is capable to support…”
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Conference Proceeding -
14
Time dependent degradation of photovoltaic modules by ultraviolet light
Published in Applied physics letters (16-06-2008)“…For high efficiency silicone encapsulated solar modules for concentrator photovoltaic systems or space applications, the question of performance degradation…”
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15
Surface modification by subsurface pressure induced diffusion
Published in Applied physics letters (23-01-2012)“…Polycrystalline Ag, covered with a nm thin siloxane layer, was irradiated with ultraviolet light in vacuum at 500K. Ag particles of different aspect ratios,…”
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16
Electroluminescence and Photoluminescence Characterization of Multijunction Solar Cells
Published in IEEE journal of photovoltaics (01-01-2013)“…A combined electroluminescence and photoluminescence setup for a fast, nondestructive, and high-resolution characterization of large-area lattice matched GaInP…”
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17
Reactive epitaxy of Co nanoparticles on (111) Si
Published in Journal of Electron Microscopy (01-01-2001)“…The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range…”
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18
Sputter yield measurements of thin foils using scanning transmission ion microscopy
Published in The European physical journal. D, Atomic, molecular, and optical physics (16-01-2015)“…Scanning transmission ion microscopy (STIM) has been applied to measure sputter yields of thin Kovar foil. The results have been found in very good agreement…”
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19
Modeling and parametric simulation of triple junction solar cell for space applications
Published in 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) (01-06-2014)“…In this paper a calibrated model of a III-V triple junction solar cell is presented. The simulations are carried out with a commercial TCAD software, and the…”
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Conference Proceeding -
20
Using variable threshold displacement energy for degradation fitting of particle irradiated multi-junction space solar cells
Published in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (01-06-2016)“…The degradation of Ga 0.5 In 0.5 P/GaAs/Ge triple junction 3G28, 3G30 and isotype 3G28 Ga 0.5 In 0.5 P and GaAs cells is analysed and the characteristic…”
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Conference Proceeding