Search Results - "Ziemer, K. S."

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys by Uddin, M. R., Doan, T. C., Li, J., Ziemer, K. S., Lin, J. Y., Jiang, H. X.

“…The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to…”
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Stability of MgO(1 1 1) films grown on 6H-SiC(0 0 0 1) by molecular beam epitaxy for two-step integration of functional oxides by Goodrich, T.L., Cai, Z., Ziemer, K.S.

“…Crystalline magnesium oxide (MgO) (1 1 1), 20 Å thick, was grown by molecular beam epitaxy (MBE) on hydrogen cleaned hexagonal silicon carbide (6H-SiC). The…”
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Soft magnetism, magnetostriction, and microwave properties of FeGaB thin films by Lou, J., Insignares, R. E., Cai, Z., Ziemer, K. S., Liu, M., Sun, N. X.

“…A series of (Fe100−yGay)1−xBx (x=0–21 and y=9–17) films were deposited; their microstructure, soft magnetism, magnetostrictive behavior, and microwave…”
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Large converse magnetoelectric coupling in FeCoV/lead zinc niobate-lead titanate heterostructure by Chen, Yajie, Gao, Jinsheng, Fitchorov, Trifon, Cai, Zhuhua, Ziemer, K. S., Vittoria, Carmine, Harris, V. G.

“…Multiferroic behavior was directly verified in a laminated ferroelectric-ferromagnetic heterostructure consisting of a FeCoV thick film ( 70   μ m ) and lead…”
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Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy by Goodrich, T. L., Parisi, J., Cai, Z., Ziemer, K. S.

“…Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide ( 6 H - Si C ) (0001) substrates at low temperatures by molecular beam epitaxy and a…”
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The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy by Ptak, A. J., Millecchia, M. R., Myers, T. H., Ziemer, K. S., Stinespring, C. D.

“…A reduced growth rate for plasma-assisted molecular beam epitaxy of GaN often limits growth to temperatures less than 750 °C. The growth rate reduction can be…”
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X-ray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe by Hirsch, L. S., Haakenaasen, R., Colin, T., Ziemer, K. S., Stinespring, C. D., Lovold, S., Myers, T. H.

“…X-ray photoelectron spectroscopy has been used to study the low-temperature ( < 80 degree C) preparation of HgCdTe surfaces with atomic hydrogen for the…”
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Characterization of atomic hydrogen-etched HgCdTe surfaces by Ziemer, K.S, Stinespring, C.D, Hirsch, L.S, Myers, T.H

“…Thermally produced atomic hydrogen is shown to remove both oxides and the Te overlayer left by Br-based etches. While near-surface HgTe depletion occurs, the…”
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Giant Electric Field Tuning of Magnetic Properties in Multiferroic Ferrite/Ferroelectric Heterostructures by Liu, Ming, Obi, Ogheneyunume, Lou, Jing, Chen, Yajie, Cai, Zhuhua, Stoute, Stephen, Espanol, Mary, Lew, Magnum, Situ, Xiaodan, Ziemer, Kate S., Harris, Vince G., Sun, Nian X.

“…Multiferroic heterostructures of Fe3O4/PZT (lead zirconium titanate), Fe3O4/PMN‐PT (lead magnesium niobate‐lead titanate) and Fe3O4/PZN‐PT (lead zinc…”
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Epitaxial MgO as an alternative gate dielectric for SiC transistor applications by Posadas, A., Walker, F. J., Ahn, C. H., Goodrich, T. L., Cai, Z., Ziemer, K. S.

“…Power transistor applications require alternative gate dielectrics on SiC that can operate at high fields without breaking down, as well as provide a high…”
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The use of atomic hydrogen for low temperature oxide removal from HgCdTe by Hirsch, L. S., Ziemer, K. S., Richards-Babb, M. R., Stinespring, C. D., Myers, T. H., Colin, Thierry

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Epitaxial MgO as an alternative gate dielectric for SiCtransistor applications by Posadas, A., Walker, F. J., Ahn, C. H., Goodrich, T. L., Cai, Z., Ziemer, K. S.

“…Power transistor applications require alternative gate dielectrics on SiC that can operate at high fields without breaking down, as well as provide a high…”
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Soft magnetism, magnetostriction, and microwave propertiesof FeGaB thin films by Lou, J., Insignares, R. E., Cai, Z., Ziemer, K. S., Liu, M., Sun, N. X.

“…A series of ( Fe 100 − y Ga y ) 1 − x B x ( x = 0 - 21 and y = 9 - 17 ) films were deposited; their microstructure, soft magnetism, magnetostrictive behavior,…”
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Influence of active nitrogen species on high temperature limitations for (0001_) GaN growth by rf plasma-assisted molecular beam epitaxy by Myers, T. H., Millecchia, M. R., Ptak, A. J., Ziemer, K. S., Stinespring, C. D.

“…A reduced growth rate for plasma-assisted molecular beam epitaxy GaN growth often limits growth to temperatures less than 750 ° C . The growth rate reduction…”
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Growth of silicon carbide on hydrogen-terminated Si (001) 1 × 1 surfaces using dimethyl- and monomethyl silane by Ziemer, K.S., Woodworth, A.A., Peng, C.Y., Stinespring, C.D.

“…A problem of long standing in the high-temperature growth of 3C–SiC on Si has been the formation of pits at the SiC/Si interface. The research described in…”
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Decreased bacterial growth on titanium nanoscale topographies created by ion beam assisted evaporation by Stolzoff, Michelle, Burns, Jason E, Aslani, Arash, Tobin, Eric J, Nguyen, Congtin, De La Torre, Nicholas, Golshan, Negar H, Ziemer, Katherine S, Webster, Thomas J

“…Titanium is one of the most widely used materials for orthopedic implants, yet it has exhibited significant complications in the short and long term, largely…”
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Growth of silicon carbide on hydrogen-terminated Si (001) 1X1 surfaces using dimethyl- and monomethyl silane by Ziemer, K S, Woodworth, A A, Peng, C Y, Stinespring, C D

“…A problem of long standing in the high-temperature growth of 3C-SiC on Si has been the formation of pits at the SiC/Si interface. The research described in…”
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Growth of silicon carbide on hydrogen-terminated Si (001) 1x surfaces using dimethyl-and monomethyl silane by ZIEMER, K. S, WOODWORTH, A. A, PENG, C. Y, STINESPRING, C. D

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Investigation of Chemical/Mechanical Polishing of Niobium by Calota, George, Maximova, Natalia, Ziemer, Katherine S., Müftü, Sinan

“…A chemical/mechanical method for polishing flat niobium sheets to a mirror finish was developed. Various polishing slurries with different open circuit…”
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Characterization of a methyl radical source for ultrahigh vacuum thin film growth studies by Gold, J. S., Lannon, J. M., Ziemer, K. S., Guntu, M., Tolani, V. L., Stinespring, C. D.

“…An ultrahigh vacuum compatible methyl radical source has been developed and characterized. The methyl radicals were generated by passing a dilute mixture of…”
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