Search Results - "Zhuravlev, K."

Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy by Mansurov, V., Malin, T., Galitsyn, Yu, Zhuravlev, K.

“…The formation of a graphene-like AlN (g-AlN) layer on a (111)-oriented silicon substrate in ammonia molecular beam epitaxy (MBE) has been investigated by the…”
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Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow by Maidebura, Y. E., Malin, T. V., Zhuravlev, K. S.

“…Based on theoretical predictions, it has been demonstrated that it is possible to purposefully change the elemental composition and position of the adsorbed…”
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InP-Based Electro-Optic and Electro-Absorption Modulators for the 1.5-μm Spectral Range by Gulyaev, D. V., Zhuravlev, K. S.

“…The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles…”
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Cumulant t-Expansion for Strongly Correlated Electrons on a Lattice by Zhuravlev, A. K.

“…A systematic nonperturbative scheme for calculating the ground state energy is adapted for studying systems of strongly correlated electrons on a lattice. It…”
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Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method by Svit, K. A., Zarubanov, A. A., Zhuravlev, K. S.

“…CdS quantum dots prepared by the Langmuir–Blodgett method have been investigated using UV spectroscopy and time-resolved photoluminescence. It has turned out…”
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Role of LMCT States in Luminescence Excitation Processes in Europium Indolecarboxylates by Tsaryuk, V. I., Zhuravlev, K. P.

“…The luminescence excitation energy transfer in europium and terbium indole-3-carboxylates, indole-3-acetates and indole-3-propionates as well as ternary…”
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Using Dispersed Gas Fluid Flow for Cooling of Energy Stressed Elements of Tokamak Structure by Zakharenkov, A. V., Loktionov, V. D., Dedov, A. V., Lyublinski, I. E., Vertkov, A. V., Demidov, A. S., Zhuravlev, K. V., Polskiy, V. I.

“…Selection of the cooling method for energy stressed elements, such as the divertor, limiter, and blanket, upon impact of powerful heat flows is an important…”
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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow by Maidebura, Y. E., Malin, T. V., Zhuravlev, K. S.

“…— The transformation of a two-dimensional GaN layer into three-dimensional islands (2D–3D transition) under increasing temperature in a flow of ammonia is…”
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On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique by Svit, K. A., Zhuravlev, K. S.

“…The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by…”
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Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1) by Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Fateev, N. V.

“…The optical gain parameters in the six heavily doped Al x Ga 1 – x N:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room…”
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Single crystal elasticity of majoritic garnets: Stagnant slabs and thermal anomalies at the base of the transition zone by Pamato, Martha G., Kurnosov, Alexander, Boffa Ballaran, Tiziana, Frost, Daniel J., Ziberna, Luca, Giannini, Mattia, Speziale, Sergio, Tkachev, Sergey N., Zhuravlev, Kirill K., Prakapenka, Vitali B.

“…The elastic properties of two single crystals of majoritic garnet (Mg3.24Al1.53Si3.23O12 and Mg3.01Fe0.17Al1.68Si3.15O12), have been measured using…”
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Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux by Dmitriev, D. V., Kolosovsky, D. A., Fedosenko, E. V., Toropov, A. I., Zhuravlev, K. S.

“…Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ…”
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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers by Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Ya, Kazancev, D. Yu, Zhuravlev, K. S.

“…The structural properties and crystal quality of Al x Ga 1 ‒  x N/AlN/Al 2 O 3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high…”
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Reconstruction phase transition c(4×4) – (1×3) on the (001)InSb surface by Bakarov, A., Galitsyn, Yu, Mansurov, V., Zhuravlev, K.

“…The (001) surface of InSb is the most common growth surface, forming a number of surface reconstructions depending on the both ratio of group III and V species…”
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Millimeter-Wave Donor-Acceptor-Doped DpHEMT by Pashkovskii, Andrey B., Bogdanov, Sergey A., Bakarov, Askhat K., Grigorenko, Alexandr B., Zhuravlev, K. S., Lapin, Vladimir G., Lukashin, Vladimir M., Rogachev, Ilya A., Tereshkin, Evgeniy V., Shcherbakov, Sergey V.

“…In this article, we present GaAs millimeter-wave pseudomorphic high-electron-mobility transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure…”
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Raman and infrared spectroscopy of pyridine under high pressure by Zhuravlev, Kirill K., Traikov, Katrina, Dong, Zhaohui, Xie, Shuntai, Song, Yang, Liu, Zhenxian

“…We report the structural transitions of pyridine as a function of pressure up to 26 GPa using in situ Raman spectroscopy and infrared absorption spectroscopy…”
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GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters by Gulyaev, D. V., Dmitriev, D. V., Fateev, N. V., Protasov, D. Yu, Kozhukhov, A. S., Zhuravlev, K. S.

“…The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the…”
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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE by Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Zhuravlev, K. S.

“…Chemical kinetics of a two-dimensional (2D) AlN layer formation on the (0001) sapphire (Al 2 O 3 ) surface during nitridation as function of ammonia flux and…”
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AlSb/InAs Heterostructures for Microwave Transistors by Sukhanov, M. A., Bakarov, A. K., Zhuravlev, K. S.

“…Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors…”
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The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors by Protasov, D. Yu, Kamesh, P. P., Svit, K. A., Dmitriev, D. V., Makeeva, A. A., Rzaev, E. M., Zhuravlev, K. S.

“…It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n + / n…”
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