Search Results - "Zhuang, Wenrong"

Carbon doped semi-insulating freestanding GaN crystals by ethylene by Liu, Qiang, Zając, Marcin, Iwińska, Małgorzata, Wang, Shuai, Zhuang, Wenrong, Boćkowski, Michał, Wang, Xinqiang

“…Semi-insulating freestanding GaN crystals are excellent candidates for substrates of GaN-based power electronic devices. Carbon doping is believed to be…”
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Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment by Wu, Junye, Liao, Zeliang, Wang, Haofan, Zou, Ping, Zhu, Renqiang, Cai, Weixiong, Zhuang, Wenrong, Tu, Yudi, Chen, Shaojun, Xiong, Xinbo, Chiu, Hsien-Chin, Li, Xiaohua, Liu, Xinke

“…In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the…”
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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Gao, Linfei, Zhong, Ze, Zhang, Qiyan, Li, Xiaohua, Xiong, Xinbo, Chen, Shaojun, Chen, Longkou, Yan, Huaibao, Zhang, Anle, Han, Jiajun, Zhuang, Wenrong, Qiu, Feng, Chiu, Hsien-Chin, Huang, Shuangwu, Liu, Xinke

“…In this work, we investigated the stability of a p-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A…”
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Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer by Liu, Xinke, Wang, Haofan, Wu, Junye, Zou, Ping, Tu, Yudi, Chen, Shaojun, Xiong, Xinbo, Wang, Xinzhong, Han, Jiajun, Zhuang, Wenrong, Yang, Zhichao, Qiu, Feng, Chiu, Hsien-Chin, Zhong, Ze

“…In this article, an ohmic contact structure based on indium tin oxide (ITO)/Ti/Al/Ni/Au is explored for high-performance GaN-on-GaN Schottky barrier diode…”
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Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation by Li, Bo, Ma, Zhengweng, Gao, Linfei, Mao, Junfa, Zhuang, Wenrong, Li, Quanchun, Zhang, Bo, Zhu, Renqiang, Li, Jingbo, Liu, Xinke

“…The main challenges in current vertical GaN diodes involve electric field crowding effects and ohmic contacts on the nitrogen face (N-Face). Extensive prior…”
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Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy by Zou, Ping, Wang, Haofan, Wu, Junye, Liao, Zeliang, Huang, Shuangwu, Zhong, Ze, Li, Xiaobo, Qiu, Feng, Zhuang, Wenrong, Chen, Longkou, Liu, Xinke

“…For most of the vertical power devices, the n-GaN drift layers were fabricated by Metal Organic Chemical Vapor Deposition (MOCVD), which would unintentionally…”
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Evaluation of reference genes for quantitative real-time PCR analysis of gene expression during early development processes of the tongue sole （Cynoglossus semilaevis） by MA Qian ZHUANG Zhimeng FENG Wenrong LIU Shufang TANG Qisheng

“…Differential expression of genes is crucial to growth and development of fish. To select the appropriate genes for gene normalization during Cynoglossus…”
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