Search Results - "Zhu, Baofu"
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1
Influence of stress induced CT local layout effect (LLE) on 14nm FinFET
Published in 2017 Symposium on VLSI Technology (01-06-2017)“…In this paper, we present a new local layout effect in 14nm FinFET due to different CT layout designs (CT extension, CT spacing, and PC past RX distance)…”
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2
Lewis Acid Promotes Three-Component Cyclization to Construct Dithioxazole Derivatives
Published in Journal of organic chemistry (16-11-2024)“…A simple and effective strategy for the construction of disulfide-substituted oxazole derivatives from amides, ynals, and acetyl disulfides via a Lewis…”
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3
Grain Morphology and Microstructure Control in High‐Stable Ni‐Rich Layered Oxide Cathodes
Published in Advanced functional materials (01-08-2023)“…Ni‐rich layered oxides are promising cathode material for high‐energy‐density lithium‐ion batteries (LIBs). However, they suffer from poor capacity retention…”
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4
Lewis Acid-Promoted Three-Component Cyclization for the Construction of Functionalized Oxazoles
Published in Journal of organic chemistry (06-01-2023)“…A simple and efficient synthetic strategy from amides, ynals, and sodium sulfinates via a Lewis acid-promoted three-component reaction has been reported. Thus,…”
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5
Mechanochemical Synthesis of 1,2,4‐Triazoles via a [3+2] Cycloaddition of Azinium‐N‐Imines and Nitriles
Published in Advanced synthesis & catalysis (06-09-2022)“…We report here a mechanochemical Cu‐catalyzed [3+2] cycloaddition of azinium‐N‐imines with nitriles under solventless grinding conditions. Various…”
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6
Lewis Acid-Catalyzed Synthesis of Polysubstituted Furans from Conjugated Ene-yne-ketones and 1,3,5-Triazinanes
Published in Journal of organic chemistry (03-06-2022)“…An efficient and metal-free approach to the construction of diverse functionalized furan derivatives has been developed from ene-yne-ketones and…”
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7
Base-Catalyzed One-Pot Synthesis of 2,3,6-Substituted Pyridines
Published in Journal of organic chemistry (18-08-2023)“…A three-component reaction catalyzed by base was established, which mainly consisted of ynals, isocyanates, amines and alcohols. This strategy provides a wide…”
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8
Cu(I)-Catalyzed Three-Component Cyclization for the Construction of Functionalized Thiazoles
Published in Journal of organic chemistry (07-08-2020)“…A novel and straightforward strategy for the synthesis of functionalized thiazoles from thioamides, ynals, and alcohols via a copper(I)-catalyzed…”
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9
Controllable Site-Selective Construction of 4- and 5‑Hydroxyalkyl-Substituted Imidazoles from Amidines, Ynals, and Water
Published in Journal of organic chemistry (04-12-2020)“…The first example of controllable site-selective pathways to construct 4- and 5-hydroxyalkyl-substituted imidazoles through a three-component reaction of…”
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10
Zn‐Catalyzed [3+2]‐Annulation Strategy: Straightforward Access to Aminoalkyl Indolizines
Published in European journal of organic chemistry (24-10-2019)“…An efficient Zn‐catalyzed [3+2]‐annulation strategy for the synthesis of aminoalkyl indolizines has been developed. The three‐component domino reaction of…”
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11
Effects of high in-situ source/drain boron doping in p-FinFETs on physical and device performance characteristics
Published in Materials science in semiconductor processing (01-08-2018)“…In this study, the effects of high in-situ boron (B) doping in embedded source/drain (S/D) silicon germanium (SiGe) stressor of p-channel Fin Field Effect…”
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12
Palladium‐Catalyzed C‐N Bond Formation: A Straightforward Alkoxymethylation Process for the Synthesis of the C1 and C3‐Dialkoxy Indoles
Published in ChemistrySelect (Weinheim) (30-12-2020)“…A novel approach for the synthesis of the C1 and C3‐dialkoxy indoles has been developed for using 2‐(phenylethynyl)aniline with formaldehyde and alcohols under…”
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13
A Novel Approach to Control Source/Drain Cavity Profile for Device Performance Improvement
Published in IEEE transactions on electron devices (01-09-2018)“…We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement-we named this cavity as doping-assisted cavity as its profile…”
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14
HCI Improvement on 14nm FinFET IO Device by Optimization of 3D Junction Profile
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01-03-2019)“…This paper investigates Hot Carrier Injection (HCI) behavior on 14nm FinFET Input/Output (IO) device. Junction profile at drain extension region is a key…”
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Conference Proceeding -
15
Contact model based on TCAD-experimental interactive algorithm
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2015)“…This work demonstrated a novel method utilizing Sentaurus Technology Computer Aided Design simulation along with experiments to intermediately extract Schottky…”
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Conference Proceeding Journal Article