Search Results - "Zhou, Huajie"
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1
Effects of thickness reduction in cold rolling process on the formability of sheet metals using ANFIS
Published in Scientific reports (21-06-2022)“…Cold rolling has detrimental effect on the formability of sheet metals. It is, however, inevitable in producing sheet high quality surfaces. The effects of…”
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Journal Article -
2
Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status
Published in Journal of electronic materials (01-07-2011)“…The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges. Innovative…”
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3
Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications
Published in IEEE transactions on electron devices (01-12-2015)“…This paper proposed, for the first time, that the dual band-edge effective work functions are achieved by employing a single metal gate (MG) and single high-k…”
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4
Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate
Published in IEEE transactions on electron devices (01-07-2012)“…We demonstrate high-performance silicon-nanowire gate-all-around MOSFETs (GAA SNWFETs) fabricated on bulk Si by a novel top-down complementary MOS-compatible…”
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5
Fabrication of Bulk-Si FinFET using CMOS compatible process
Published in Microelectronic engineering (01-06-2012)“…Schematic for fabricating Bulk-Si FinFET using the quasi-planar traditional CMOS process. [Display omitted] ► We have proposed a new Bulk-Si FinFET fabrication…”
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6
High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process
Published in IEEE electron device letters (01-12-2010)“…In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has…”
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7
Investigation of Key Technologies for Poly-Si/TaN/HfLaON/IL Gate-Stacks in Advanced Device Applications
Published in IEEE transactions on electron devices (01-04-2014)“…We demonstrated for the first time integration of a poly-Si/TaN/HfLaON/IL SiO 2 gate-stacks into high-performance sub-30-nm nMOSFETs using a gate-first process…”
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8
Source/drain technologies for the scaling of nanoscale CMOS device
Published in Solid state sciences (01-02-2011)“…Continuous shrinking CMOS device into 21 nm technology node is facing fundamental challenges. The International Technology Roadmap for Semiconductors (ITRS)…”
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9
Transcriptional regulation by CRISPR/dCas9 in common wheat
Published in Gene (10-01-2022)“…[Display omitted] •The CRISPR/dCas9 based transcriptional gene activation and repression system worked in the stable trangenic lines of common wheat.•The…”
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10
The evaluation of active transcriptional repressor domain for CRISPRi in plants
Published in Gene (30-01-2023)“…[Display omitted] •Confirming the transcriptional repressing activity of DLN144, which has been demonstrated to have stronger repressing effectiveness in yeast…”
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11
High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process
Published in 69th Device Research Conference (01-06-2011)“…We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The…”
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Conference Proceeding -
12
Modulate Work Function of Ni-FUSI metal gate by implanting Yb
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01-10-2008)“…This paper investigates the work function adjustment of Ni-FUSI metal gate by implanting Yb into poly-Si gate before silicidation. It is obvious that…”
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Conference Proceeding -
13
Dual-work-function modulation for Ni-FUSI metal gate CMOS technology
Published in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (01-10-2006)“…This paper investigates the work function adjustment of Ni-FUSI metal gate. It is obvious that implanting dopant into poly-Si before silicidation can modulate…”
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Conference Proceeding -
14
High-quality HfSiON gate dielectric and its application in a gate-last NMOSFET fabrication
Published in 2013 IEEE International Conference of Electron Devices and Solid-state Circuits (01-06-2013)“…HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics,…”
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Conference Proceeding -
15
Photocatalytic degradation of carbofuran in TiO_2 aqueous solution: Kinetics using design of experiments and mechanism by HPLC/MS/MS
Published in 环境科学学报:英文版 (2013)“…The photocatalytic degradation kinetics of carbofuran was optimized by central composite design based on response surface methodology for the first time. Three…”
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16
Information integration management for metro transit safety monitoring based on openSource WEBGIS
Published in 2010 International Conference on Mechanic Automation and Control Engineering (01-06-2010)“…A metro transit construction safety monitoring WEBGIS information integration management which meets the OpenGIS standard is established using open source…”
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Conference Proceeding -
17
A High-Performance Source-Pocket Tunnel Field-Effect Transistor
Published in 2019 China Semiconductor Technology International Conference (CSTIC) (01-03-2019)“…In this paper, a p-type source-pocket tunnel field-effect (SPTFET) has been fabricated. The main feature of the device is that the p-type pocket was formed at…”
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Conference Proceeding -
18
Relationship Between Beak Morphological Variables and Body Size and Mantle Length of Male and Female Argentine Sbortfin Squid (Illex argentinus)
Published in 中国海洋大学学报:英文版 (2012)“…Beak of cephalopod is an important hard tissue. Understanding the morphology of beak can yield critical infor- mation on the role of cephalopods in the…”
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Journal Article