Search Results - "Zhihao Lao"
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1
Effectiveness of an Ophthalmic Hospital-Based Virtual Service during the COVID-19 Pandemic
Published in Ophthalmology (Rochester, Minn.) (01-06-2021)Get full text
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2
80-GHz differential VCO in InP SHBTs
Published in IEEE microwave and wireless components letters (01-09-2004)“…A high frequency millimeter-wave voltage-controlled oscillator (VCO) has been designed, manufactured and tested in InP single heterojunction bipolar transistor…”
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3
Introduction to the 2002 IEEE GaAs IC symposium
Published in IEEE journal of solid-state circuits (01-09-2003)Get full text
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4
200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers
Published in Solid-state electronics (01-01-2007)“…Traditional compound semiconductor HBT technologies do not allow for the independent design of the intrinsic and extrinsic collector regions commonly found in…”
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5
40-Gb/s high-power modulator driver IC for lightwave communication systems
Published in IEEE journal of solid-state circuits (01-10-1998)“…A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was…”
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6
A DC-43GHz-Bandwidth 30dB-Gain Amplifier
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01-06-2006)“…A broadband limiting amplifier is designed, manufactured, and measured using 1mum InP SHBT technology with f T /f max =160GHz/160GHz. The lumped-element…”
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Conference Proceeding -
7
A Linear Inductorless SiGe BiCMOS TIA With <2% THD for 64-GBaud Coherent Optical Receivers
Published in IEEE microwave and wireless technology letters (Print) (01-02-2024)“…This letter presents the design methodology and implementation of a 64-GBaud (128-Gb/s) linear differential transimpedance amplifier (TIA) for high-speed…”
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8
A Linear Inductorless SiGe BiCMOS TIA With
Published in IEEE microwave and wireless technology letters (Print) (01-01-2024)“…67 GHz, gain dynamic range of 30 dB, input reference noise (IRN) current density [Formula Omitted], and total harmonic distortion (THD)…”
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9
40 Gb/s differential traveling wave modulator driver
Published in IEEE microwave and wireless components letters (01-08-2003)“…In this letter a MMIC differential traveling wave driver for 40 Gb/s electro-absorption modulation driver is presented. The driver delivers 2.7 Vp-p or 2.4 V…”
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10
A low power (45mW/latch) static 150GHz CML divider
Published in IEEE Compound Semiconductor Integrated Circuit Symposium, 2004 (2004)“…Operation of a static, current mode logic (CML) frequency divider to clock frequencies exceeding 150GHz is reported. The divide-by-8 circuit described here has…”
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Conference Proceeding -
11
Design of a low-power 10 Gb/s Si bipolar 1:16-demultiplexer IC
Published in IEEE journal of solid-state circuits (01-01-1996)“…The design of a low-power Si bipolar 1:16-demultiplexer IC built of 1:4-demultiplexer subcomponents for 10 Gb/s (STM-64) is described. The 1:4-demultiplexers…”
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12
Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Published in Journal of lightwave technology (01-08-1998)“…Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance…”
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13
25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Published in 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers (01-01-1997)“…Automatic-gain-control (AGC), transimpedance, and limiting amplifiers are key elements in optical-fiber links and measuring equipment. This AGC amplifier and…”
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Conference Proceeding Journal Article -
14
Si bipolar 14 Gb/s 1:4-demultiplexer IC for system applications
Published in IEEE journal of solid-state circuits (01-01-1996)“…A 1:4-demultiplexer IC meeting the essential requirements for lightwave communication systems has been designed based on a 21 GHz f/sub T/ 0.4 /spl mu/m Si…”
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15
Mixed signal integrated circuits based on GaAs HEMTs
Published in IEEE transactions on very large scale integration (VLSI) systems (01-03-1998)“…During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate…”
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16
A 12 Gb/s Si bipolar 4:1-multiplexer IC for SDH systems
Published in IEEE journal of solid-state circuits (01-02-1995)“…The 4:1-multiplexer reported here is based on a 21 GHz f/sub T/ 0.4 /spl mu/m silicon bipolar technology and operates up to 12 Gb/s. For facilitating system…”
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17
200GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers
Published in Solid-state electronics (01-01-2007)Get full text
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18
20-40 Gb/s 0.2- mu m GaAs HEMT chip set for optical data receiver
Published in IEEE journal of solid-state circuits (01-09-1997)“…Using our 0.2- mu m AlGaAs/GaAs/AlGaAs quantum well high electron mobility transfer (HEMT) technology, we have developed a chip set for 20-40 Gb/s…”
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19
The development of 40 Gb/s limiting-distributed modulator drivers in InP HBTs
Published in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 (2003)“…The development of monolithic modulator drivers designed in InP SHBT technologies for 40-Gb/s optical communications is presented. The drivers consist of a…”
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Conference Proceeding -
20
35-GHz static and 48-GHz dynamic frequency divider ICs using0.2-mu m AlGaAs/GaAs-HEMTs
Published in IEEE journal of solid-state circuits (01-10-1997)“…Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-mum gate length AlGaAs/GaAs-high electron mobility transistor (HEMT)…”
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Journal Article