Search Results - "Zheleva, Tsvetanka"

Transition layers at the SiO2∕SiC interface by Zheleva, Tsvetanka, Lelis, Aivars, Duscher, Gerd, Liu, Fude, Levin, Igor, Das, Mrinal

“…The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and…”
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Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS by Taillon, Joshua A., Klingshirn, Christopher J., Jiao, Chunkun, Zheng, Yongju, Dhar, Sarit, Zheleva, Tsvetanka S., Lelis, Aivars J., Salamanca-Riba, Lourdes G.

“…We report a transmission electron microscopy (TEM) study of the impacts of phosphorus and boron passivation processes at 4H-SiC/SiO2 interfaces. The chemical…”
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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors by Joh, Jungwoo, Alamo, Jesús A. del, Langworthy, Kurt, Xie, Sujing, Zheleva, Tsvetanka

“…In GaN high-electron-mobility transistors, electrical degradation due to high-voltage stress is characterized by a critical voltage at which irreversible…”
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Pressure response of the ultraviolet photoluminescence of ZnO and MgZnO nanocrystallites by Huso, Jesse, Morrison, John L., Hoeck, Heather, Chen, Xiang-Bai, Bergman, Leah, Jokela, S. J., McCluskey, M. D., Zheleva, Tsvetanka

“…The pressure response of the ultraviolet photoluminescence of ZnO nanocrystallites and MgZnO nanoalloy of composition 15% Mg:85% Zn of the wurtzite structure…”
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Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy by Nam, Ok-Hyun, Bremser, Michael D., Zheleva, Tsvetanka S., Davis, Robert F.

“…Organometallic vapor phase lateral epitaxy and coalescence of GaN layers originating from GaN stripes deposited within 3-μm-wide windows spaced 3 μm apart and…”
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Lateral epitaxy and dislocation density reduction in selectively grown GaN structures by Zheleva, Tsvetanka S., Nam, Ok-Hyun, Ashmawi, Waeil M., Griffin, Jason D., Davis, Robert F.

“…The results of a comparative study of the defect microstructures at different regions in epitaxial, monocrystalline GaN structures grown selectively within…”
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Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films by ZHELEVA, T. S, SMITH, S. A, THOMSON, D. B, LINTHICUM, K. J, RAJAGOPAL, P, DAVIS, R. F

“…Lateral growth of gallium nitride (GaN) films having a low density of dislocations and suspended from side walls of [0001] oriented GaN columns and over…”
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Dislocation density reduction via lateral epitaxy in selectively grown GaN structures by Zheleva, Tsvetanka S., Nam, Ok-Hyun, Bremser, Michael D., Davis, Robert F.

“…The microstructure and the lateral epitaxy mechanism of formation of homoepitaxially and selectively grown GaN structures within windows in SiO2 masks have…”
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Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy by Nam, Ok-Hyun, Zheleva, Tsvetanka S., Bremser, Michael D., Davis, Robert F.

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Sublimation growth and characterization of bulk aluminum nitride single crystals by Balkaş, Cengiz M., Sitar, Zlatko, Zheleva, Tsvetanka, Bergman, L., Nemanich, R., Davis, R.F.

“…Single crystalline platelets of aluminum nitride (AlN) ⩽ 1 mm thick have been grown within the temperature range of 1950–2250°C on 10 × 10 mm 2 α(6H)-silicon…”
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Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates by Davis, Robert F., Gehrke, Thomas, Linthicum, Kevin J., Zheleva, Tsvetanka S., Rajagopal, Pradeep, Zorman, Chris A., Mehregany, Mehran

“…Monocrystalline GaN and Al Ga N films have been grown via the pendeo-epitaxy (PE) [ ] technique with and without Si masks on GaN/AlN/6H–SiC(0001) and…”
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Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors by Klingshirn, Christopher J., Jayawardena, Asanka, Dhar, Sarit, Ramamurthy, Rahul P., Morisette, Dallas, Warecki, Zoey, Cumings, John, Zheleva, Tsvetanka, Lelis, Aivars, Salamanca-Riba, Lourdes G.

“…•Electron irradiation crystallizes amorphous alumina films on beta-gallium oxide.•The electron dose rate is correlated to the crystallization rate.•The small…”
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Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures by Zheleva, Tsvetanka S., Ashmawi, Waeil M., Nam, Ok-Hyun, Davis, Robert F.

“…A reduction in the dislocation density of 104–105 cm−2 has been achieved via lateral epitaxial overgrowth (LEO) of GaN films selectively grown from stripes…”
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Optical and structural properties of lateral epitaxial overgrown GaN layers by Freitahs, Jaime A, nam, Ok-Hyun, Zheleva, Tsvetanka S, Davis, Robert F

“…The optical and microstructural properties of laterally grown GaN overlayers nucleated on GaN stripes by organometallic vapor-phase epitaxy have been…”
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Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN by Hanser, Andrew D, Nam, Ok-Hyun, Bremser, Michael D, Thomson, Darren B, Gehrke, Thomas, Zheleva, Tsvetanka S, Davis, Robert F

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The formation of crystalline defects and crystal growth mechanism in In Ga1−N/GaN heterostructure grown by metalorganic vapor phase epitaxy by Kawaguchi, Yasutoshi, Shimizu, Masaya, Yamaguchi, Masahito, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Taki, Wataru, Tsuda, Hidetaka, Kuwano, Noriyuki, Oki, Kensuke, Zheleva, Tsvetanka, Davis, Robert F

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Transition layers at the Si O 2 ∕ Si C interface by Zheleva, Tsvetanka, Lelis, Aivars, Duscher, Gerd, Liu, Fude, Levin, Igor, Das, Mrinal

“…The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and…”
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Pressure response of the ultraviolet photoluminescence of ZnOand MgZnO nanocrystallites by Huso, Jesse, Morrison, John L., Hoeck, Heather, Chen, Xiang-Bai, Bergman, Leah, Jokela, S. J., McCluskey, M. D., Zheleva, Tsvetanka

“…The pressure response of the ultraviolet photoluminescence of ZnO nanocrystallites and MgZnO nanoalloy of composition 15% Mg:85% Zn of the wurtzite structure…”
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The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy by Kawaguchi, Yasutoshi, Shimizu, Masaya, Yamaguchi, Masahito, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Taki, Wataru, Tsuda, Hidetaka, Kuwano, Noriyuki, Oki, Kensuke, Zheleva, Tsvetanka, Davis, Robert F

“…The composition pulling effect at the initial growth stage of InxGa1−xN grown on a GaN epitaxial layer is studied in relation to the lattice mismatch between…”
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Synthesis and characterization of Pb(Zr sub 0 sub . sub 5 sub 4 Ti sub 0 sub . sub 4 sub 6 )O sub 3 thin films on (100)Si using textured YBa sub 2 Cu sub 3 O sub 7 sub - sub delta and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique by Tiwari, P, Zheleva, Tsvetanka, Narayan, J

“…The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed…”
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