Search Results - "Zhang, E. X."

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors by Puzyrev, Y. S., Roy, T., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

“…Threshold-voltage shifts and increases in 1/ f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated…”
Get full text

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance by King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.

“…Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs…”
Get full text

Microbial sensor for drug susceptibility testing of Mycobacterium tuberculosis by Zhang, Z.‐T., Wang, D.‐B., Li, C.‐Y., Deng, J.‐Y., Zhang, J.‐B., Bi, L.‐J., Zhang, X.‐E.

“…Aims Drug susceptibility testing (DST) of clinical isolates of Mycobacterium tuberculosis is critical in treating tuberculosis. We demonstrate the possibility…”
Get full text

Memristive devices from ZnO nanowire bundles and meshes by Puzyrev, Y. S., Shen, X., Zhang, C. X., Hachtel, J., Ni, K., Choi, B. K., Zhang, E.-X., Ovchinnikov, O., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T.

“…We report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed…”
Get full text

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy by Zhang, Z., Arehart, A. R., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Ringel, S. A.

“…The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical…”
Get full text

Bias Dependence of Total-Dose Effects in Bulk FinFETs by Chatterjee, I., Zhang, E. X., Bhuva, B. L., Alles, M. A., Schrimpf, R. D., Fleetwood, D. M., Fang, Y.-P, Oates, A.

“…The total ionizing dose response of triple-well FinFETs is investigated for various bias conditions. Experimental results show that irradiation with the…”
Get full text

Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage by Harrington, R. C., Kauppila, J. S., Maharrey, J. A., Haeffner, T. D., Sternberg, A. L., Zhang, E. X., Ball, D. R., Nsengiyumva, P., Bhuva, B. L., Massengill, L. W.

“…At the 14-/16-nm FinFET technology node, experimental heavy-ion single-event upset (SEU) cross sections have been obtained for a D flip-flop (DFF) with…”
Get full text

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors by Zhang, E X, Newaz, K M, Wang, B, Zhang, C X, Fleetwood, D M, Bolotin, K I, Schrimpf, R D, Pantelides, S T, Alles, M L

“…We employ resistance measurements and Raman spectroscopy to investigate the effects of UV ozone (UVO) exposure and Ar annealing on graphene-on-SiO2…”
Get full text

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs by El-Mamouni, F., Zhang, E. X., Pate, N. D., Hooten, N., Schrimpf, R. D., Reed, R. A., Galloway, K. F., McMorrow, D., Warner, J., Simoen, E., Claeys, C., Griffoni, A., Linten, D., Vizkelethy, G.

“…Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs. Transients show distinct signatures for charge collection from drift and…”
Get full text

Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques by Maharrey, J. A., Kauppila, J. S., Harrington, R. C., Nsengiyumva, P., Ball, D. R., Haeffner, T. D., Zhang, E. X., Bhuva, B. L., Holman, W. T., Massengill, L. W.

“…Single-event transients (SETs) in 16-/14-nm bulk fin field effect transistor (finFET) logic chains have been measured using a custom-designed test IC. A…”
Get full text

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs by El-Mamouni, F., Zhang, E. X., Ball, D. R., Sierawski, B., King, M. P., Schrimpf, R. D., Reed, R. A., Alles, M. L., Fleetwood, D. M., Linten, D., Simoen, E., Vizkelethy, G.

“…Measured heavy-ion induced current transients are compared for two different junction contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with…”
Get full text

Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions by Maharrey, J. A., Quinn, R. C., Loveless, T. D., Kauppila, J. S., Jagannathan, S., Atkinson, N. M., Gaspard, N. J., Zhang, E. X., Alles, M. L., Bhuva, B. L., Holman, W. T., Massengill, L. W.

“…Single-Event Transient (SET) pulse widths were obtained from the heavy-ion irradiation of inverters designed in 32 nm and 45 nm silicon-on-insulator (SOI). The…”
Get full text

Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect by Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J., McMorrow, D., Wen, S., Wong, R., Salzman, J. F., Jordan, S., Pellish, J. A., Marshall, C. J., Gaspard, N. J., Bennett, W. G., Zhang, E. X., Bhuva, B. L.

“…Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of various single event latchup (SEL) hardening strategies, including…”
Get full text

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs by Zhang, E. X., Fleetwood, D. M., Pate, N. D., Reed, R. A., Witulski, A. F., Schrimpf, R. D.

“…We have performed time-domain reflectometry (TDR) measurements on nMOSFETs before and after irradiation on time scales relevant to MOS radio-frequency…”
Get full text

Comparison of hepatic epithelioid angiomyolipoma and non-hepatitis B, non-hepatitis C hepatocellular carcinoma on contrast-enhanced ultrasound by Tan, Y., Xie, X.-Y., Li, X.-J., Liu, D.-H., Zhou, L.-Y., Zhang, X.-E., Lin, Y., Wang, W., Wu, S.-S., Liu, J., Huang, G.-L.

“…•Hyperenhancement during the arterial phase and washout have unacceptable low specificity for discriminating between hepatic epithelioid angiomyolipoma and…”
Get full text

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation by Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., Massengill, L. W.

“…The combined effects of TID, process corner, and temperature on the performance of high frequency RF circuits are presented. TID experiments at 25°C and 100°C…”
Get full text

Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs by Zhang, E. X., Fleetwood, D. M., Duan, G. X., Zhang, C. X., Francis, S. A., Schrimpf, R. D.

“…We demonstrate that, by monitoring source and drain currents during alternating-current gate pulses, reliable estimates of radiation-induced interface-trap…”
Get full text

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs by Mahatme, N. N., Zhang, E. X., Reed, R. A., Bhuva, B. L., Schrimpf, R. D., Fleetwood, D. M., Linten, D., Simoen, E., Griffoni, A., Aoulaiche, M., Jurczak, M., Groeseneken, G.

“…In this paper we investigate how geometry impacts the memory characteristics of 1-transistor dynamic floating body RAMs (FBRAMs) under total ionizing dose…”
Get full text

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors by Ramachandran, V., Reed, R. A., Schrimpf, R. D., McMorrow, D., Boos, J. Brad, King, M. P., Zhang, E. X., Vizkelethy, G., Shen, X., Pantelides, S. T.

“…Experimental evidence confirming single-event transient generation from ion strikes directly into the drain region of an InAlSb/InAs/AlGaSb high electron…”
Get full text

Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients by Ahlbin, J. R., Atkinson, N. M., Gadlage, M. J., Gaspard, N. J., Bhuva, B. L., Loveless, T. D., Zhang, E. X., Chen, L., Massengill, L. W.

“…Heavy-ion broadbeam results from a 90 nm process are presented for five inverter chains with varying n-well contact schemes. Results show that inverters with…”
Get full text