Search Results - "Zhang, Baijun"

Dynamic Characteristics Analysis and Finite Element Simulation of an Ancient Timber Building under Environmental Excitation by Zhou, Ji, Hu, Jiaxing, Zhang, Baijun, Sun, Ming, Wang, Shilong

“…This study investigates the vibration response and dynamic characteristics of the Shigudeng Pavilion under environmental excitation, employing a comprehensive…”
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Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor by Wang, Fengge, Liu, Honghui, Xu, Yanyan, Liang, Zhiwen, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…Human epidermal growth factor receptor-3 (HER-3) plays a key role in the growth and metastasis of cancer cells. The detection of HER-3 is very important for…”
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GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid by Chen, Weijie, Lin, Jiali, Hu, Guoheng, Han, Xiaobiao, Liu, Minggang, Yang, Yibin, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…We demonstrated the fabrication of GaN nanowire (NW) by selective etching of the GaN micro truncated-pyramid (μ-TP) in KOH solution. The GaN μ-TP, which…”
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Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs by Ding, Cairong, Lv, Zesheng, Zeng, Xueran, Zhang, Baijun

“…Superfluorescence is a collective emission from quantum coherent emitters due to quantum fluctuations. This is characterized by the existence of the delay time…”
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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth by Liang He, Fan Yang, Liuan Li, Zijun Chen, Zhen Shen, Yue Zheng, Yao Yao, Yiqiang Ni, Deqiu Zhou, Xiaorong Zhang, Lei He, Zhisheng Wu, Baijun Zhang, Yang Liu

“…In this paper, a normally off Al 2 O 3 /AlN/GaN MISFET on Si substrate for achieving high threshold voltage stability and uniformity is obtained based on…”
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Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application by Li, Liuan, Wang, Wenjing, He, Liang, Zhang, Jialin, Wu, Zhisheng, Zhang, Baijun, Liu, Yang

“…p-type NiO films were prepared at different oxidizing temperatures in O2 ambient for normally-off AlGaN/GaN HFETs application. The crystalline structure,…”
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Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes by Fan, Bingfeng, Wu, Hao, Zhao, Yu, Xian, Yulun, Zhang, Baijun, Wang, Gang

“…This paper presents a chip-level thermal study of high-power nitride-based flip-chip (FC) light-emitting diodes (LEDs). In order to understand the thermal…”
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Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement by Liu, Zenghui, Zhang, Xiaobo, Liang, Zhiwen, Wang, Fengge, Xu, Yanyan, Yang, Xien, Li, Xin, Liang, Yisheng, Lin, Lizhang, Li, Xiaodong, Zhao, Wenbo, Cao, Xin, Wang, Xinqiang, Zhang, Baijun

“…GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and…”
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Asymmetric Structural Engineering of Hot‐Exciton Emitters Achieving a Breakthrough in Non‐Doped BT.2020 Blue OLEDs with a Record 9.5% External Quantum Efficiency by Ma, Bingzhu, Zhang, Baijun, Zhang, Han, Huang, Yu, Liu, Lu, Wang, Baoling, Yang, Dezhi, Ma, Dongge, Tang, Ben Zhong, Wang, Zhiming

“…High‐efficiency non‐doped deep‐blue organic light‐emitting diodes (OLEDs) meeting the standard of BT.2020 color gamut is desired but rarely reported. Herein,…”
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120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode by Liu, Honghui, Liang, Zhiwen, Meng, Jin, Liu, Yuebo, Wang, Hongyue, Yan, Chaokun, Wu, Zhisheng, Liu, Yang, Zhang, Dehai, Wang, Xinqiang, Zhang, Baijun

“…Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown…”
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A ceRNA network mediated by LINC00475 in papillary thyroid carcinoma by Yang, Yarong, Hua, Wenjuan, Zeng, Mei, Yu, Liling, Zhang, Baijun, Wen, Liming

“…Papillary thyroid carcinoma (PTC) is the most frequent histological type of differentiated thyroid carcinoma. Long noncoding RNAs (lncRNAs) have been widely…”
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All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle by Wang, Fengge, Zhang, Minjie, Liu, Honghui, Xu, Yanyan, Liang, Zhiwen, Shen, Junyu, Xiao, Zhengwen, Yan, Chaokun, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…It is very important to monitor pH values. In this paper, we fabricated an all-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect…”
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An Integrated Neural Optrode with Modification of Polymer-Carbon Composite Films for Suppression of the Photoelectric Artifacts by Xu, Yanyan, Yang, Xien, Liang, Zhiwen, Lin, Lizhang, Zhao, Wenbo, Wang, Liyang, Xia, Yu, Lin, Xudong, Vai, Mang I., Pun, Sio Hang, Zhang, Baijun

“…Optogenetics-based integrated photoelectrodes with high spatiotemporal resolution play an important role in studying complex neural activities. However, the…”
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Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons by Zheng, Huying, Wang, Runchen, Gong, Xuebing, Dong, Junxing, Wang, Lisheng, Wang, Jingzhuo, Zhang, Yifan, Shen, Yan, Chen, Huanjun, Zhang, Baijun, Zhu, Hai

“…Exciton-polaritons, which are bosonic quasiparticles with an extremely low mass, play a key role in understanding macroscopic quantum effects related to…”
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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates by Yang, Yibin, Xiang, Peng, Liu, Minggang, Chen, Weijie, He, Zhiyuan, Han, Xiaobiao, Ni, Yiqiang, Yang, Fan, Yao, Yao, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…In the present paper, compositionally graded AlGaN buffer layer was employed to compensate the tensile stress and improve the crystalline quality of GaN grown…”
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Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts by Shen, Junyu, Xu, Yanyan, Xiao, Zhengwen, Liu, Yuebo, Liu, Honghui, Wang, Fengge, Yan, Chaokun, Wang, Liyang, Chen, Changhao, Wu, Zhisheng, Liu, Yang, Mak, Peng Un, Vai, Mang I, Pun, Sio Hang, Lei, Tim C, Zhang, Baijun

“…Optrodes, which are single shaft neural probes integrated with microelectrodes and optical light sources, offer a remarkable opportunity to simultaneously…”
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Current Spreading Effects in Vertical GaN‐Based Light‐Emitting Diode on Si(111) Substrate by Wei, Jingting, Zhang, Baijun, Wang, Gang

“…The optimal design of GaN‐based Lightemitting diode (LED) is important for its reliability. In this work, a new three‐Dimensional (3D) circuit model with a…”
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Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole by Yang, Longkun, Yao, Wanqing, Liu, Yuebo, Wang, Linglong, Dai, Yaqiong, Liu, Honghui, Wang, Fengge, Ren, Yuan, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…The capacitance and the series resistance are two main factors which determine the cut-off frequency of Schottky barrier diodes (SBDs) for their application in…”
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Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure by Liu, Honghui, Liang, Zhiwen, Wang, Fengge, Xu, Yanyan, Yang, Xien, Liang, Yisheng, Li, Xin, Lin, Lizhang, Wu, Zhisheng, Liu, Yang, Zhang, Baijun

“…In this paper, the lateral Schottky barrier diodes (SBDs) with small capacitance and low turn-on voltage ( V on ) were fabricated on n-GaN and AlGaN/GaN…”
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Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors by Shen, Zhen, He, Liang, Zhou, Guilin, Yao, Yao, Yang, Fan, Ni, Yiqiang, Zheng, Yue, Zhou, Deqiu, Ao, Jinping, Zhang, Baijun, Liu, Yang

“…In this work, H2O‐Al2O3/O3‐Al2O3 insulating bilayers were grown on GaN by atomic‐layer deposition (ALD) technique using H2O vapor and O3 as oxidants. The…”
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