Search Results - "Zeynalov, V. Z."

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  1. 1

    Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor by Mekhtiyeva, S. I., Atayeva, S. U., Isayev, A. I., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2017)
    “…X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se 95 Te 5 chalcogenide glassy semiconductor films and…”
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    Journal Article
  2. 2

    Influence of the samarium impurity on the structure and surface morphology of Se{sub 95}Te{sub 5} chalcogenide glassy semiconductor by Mekhtiyeva, S. I., Atayeva, S. U., Isayev, A. I., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (15-06-2017)
    “…X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se{sub 95}Te{sub 5} chalcogenide glassy semiconductor…”
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    Journal Article
  3. 3

    Features of the local structure of the Se95Te5 chalcogenide vitreous semiconductor doped with samarium by Mekhtiyeva, S. I., Isayev, A. I., Atayeva, S. U., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2014)
    “…The Raman spectra of evaporated amorphous selenium films, of films of undoped Se 95 Te 5 chalcogenide vitreous semiconductor, and of similar films doped with…”
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    Journal Article
  4. 4

    Role of charged defects in the photoconductivity of Se95As5 chalcogenide glassy semiconductor with the EuF3 impurity by Isayev, A. I., Mekhtiyeva, S. I., Garibova, S. N., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2014)
    “…The energy spectrum of local states associated with charged defects D − and D + playing a significant role in carrier generation and recombination in the…”
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    Journal Article
  5. 5

    Conductivity of Se95As5 chalcogenide glassy semiconductor layers containing the EuF3 rare-earth impurity in high electric fields by Isayev, A. I., Mekhtieva, S. I., Garibova, S. N., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2012)
    “…By investigating the I – V characteristics of an Al-Se 95 As 5 :EuF 3 -Te structure, it is established that, upon the application of a positive potential to…”
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    Journal Article
  6. 6

    Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3 impurities by Isayev, A. I., Mekhtiyeva, S. I., Garibova, S. N., Alekperov, R. I., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2011)
    “…Optical properties of chalcogenide vitreous semiconductors of composition Se 95 As 5 containing different amounts of rare-earth metal fluorides (EuF 3 ) are…”
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    Journal Article
  7. 7

    Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF{sub 3} impurities by Isayev, A. I., Mekhtiyeva, S. I., Garibova, S. N., Alekperov, R. I., Zeynalov, V. Z.

    Published in Semiconductors (Woodbury, N.Y.) (15-08-2011)
    “…Optical properties of chalcogenide vitreous semiconductors of composition Se{sub 95}As{sub 5} containing different amounts of rare-earth metal fluorides…”
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    Journal Article