Search Results - "Zerova, V. L."

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  1. 1

    Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures by Vorobjev, L. E., Firsov, D. A., Vinnichenko, M. Ya, Zerova, V. L., Melentyev, G. A., Mashko, M. O., Shterengas, L., Kipshidze, G., Belenky, G., Hosoda, T.

    “…Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of…”
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  2. 2

    A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots by Kastalsky, A., Vorobjev, L.E., Firsov, A., Zerova, V.L., Towe, E.

    Published in IEEE journal of quantum electronics (01-10-2001)
    “…A new type of semiconductor injection laser capable of simultaneously generating radiation in the mid-infrared (MIR) (/spl lambda//spl sim/10 /spl mu/m) and…”
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    Birefringence and absorption of infrared radiation in tunnel-coupled GaAs/AlGaAs quantum wells in a longitudinal electric field by Vorobjev, L.E., Zerova, V.L., Titkov, I.E., Firsov, D.A., Shalygin, V.A., Tulupenko, V.N., Towe, E.

    Published in Superlattices and microstructures (01-01-1999)
    “…Birefringence and absorption modulation under electron heating in a longitudinal electric field in the tunnel-coupled GaAs/AlGaAs quantum wells have been found…”
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  8. 8

    Carrier heating in quantum wells under optical and current injection of electron-hole pairs by Vorobjev, L. E., Vinnichenko, M. Ya, Firsov, D. A., Zerova, V. L., Panevin, V. Yu, Sofronov, A. N., Thumrongsilapa, P., Ustinov, V. M., Zhukov, A. E., Vasiljev, A. P., Shterengas, L., Kipshidze, G., Hosoda, T., Belenky, G.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2010)
    “…Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature…”
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  9. 9

    Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures by Firsov, D. A., Shterengas, L., Kipshidze, G., Zerova, V. L., Hosoda, T., Thumrongsilapa, P., Vorobjev, L. E., Belenky, G.

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2010)
    “…The dynamics of interband photoluminescence has been studied at various temperatures and excitation levels in structures with quantum wells based on InGaAsSb…”
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  10. 10

    Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions by Vorob’ev, L. E., Zerova, V. L., Borshchev, K. S., Sokolova, Z. N., Tarasov, I. S., Belenky, G.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2008)
    “…The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and…”
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  11. 11

    Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields by Zerova, V. L., Vorob’ev, L. E., Firsov, D. A., Towe, E.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2007)
    “…Modulation of absorption of middle-infrared radiation in double tunneling-coupled quantum wells in longitudinal electric fields is studied. A specific feature…”
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  12. 12

    Charge carrier recombination mechanisms in Sb-containing quantum well laser structures by Vorob’ev, L. E., Zerova, V. L., Firsov, D. A., Belenky, G., Shterengas, L., Kipshidze, G., Hosoda, T., Suchalkin, S., Kisin, M.

    “…The dynamics of interband luminescence in structures with InGaAsSb-based quantum wells and barriers of different types was studied at different temperatures…”
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