Search Results - "Zerlauth, S"

Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule by Berti, M., De Salvador, D., Drigo, A. V., Romanato, F., Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G.

“…The precise C content of a series of Si1−yCy epilayer samples (0<y<0.012) was determined by resonant backscattering experiments using a He+4 ion beam at 5.72…”
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Vertical and lateral ordering in self-organized quantum dot superlattices by Springholz, G., Pinczolits, M., Holy, V., Zerlauth, S., Vavra, I., Bauer, G.

“…The formation of vertically and laterally ordered dot superstructures in self-organized quantum dot superlattices is described. The ordering is based on the…”
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Growth conditions for complete substitutional carbon incorporation into Si1−yCy layers grown by molecular beam epitaxy by Zerlauth, S., Seyringer, H., Penn, C., Schäffler, F.

“…To study the conditions for substitutional incorporation of carbon into Si layers, we grew pseudomorphic Si1−yCy/Si superlattices with absolute carbon…”
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X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires by Hesse, A., Zhuang, Y., Holý, V., Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G., Darowski, N., Pietsch, U.

“…The elastic strain relaxation in a series of dry-etched periodic multilayer Si/SiGe wire samples with different etching depths was investigated systematically…”
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In-plane strain and strain relaxation in laterally patterned periodic arrays of Si/SiGe quantum wires and dot arrays by Darowski, N., Pietsch, U., Zhuang, Y., Zerlauth, S., Bauer, G., Lübbert, D., Baumbach, T.

“…The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high…”
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Molecular beam epitaxy of pseudomorphic silicon/carbon superlattices on silicon substrates by Faschinger, W., Zerlauth, S., Stangl, J., Bauer, G.

“…We describe the molecular beam epitaxy growth of superlattices where silicon layers with a thickness between 3 and 10 nm alternate with very thin carbon…”
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Molecular beam epitaxial growth and photoluminescence investigation of Si1-yCy layers by ZERLAUTH, S, PENN, C, SEYRINGER, H, STANGL, J, BRUNTHALER, G, BAUER, G, SCHÄFFLER, F

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Influence of thermal annealing on the photoluminescence from pseudomorphic Si1−yCy epilayers on Si by Penn, C., Zerlauth, S., Stangl, J., Bauer, G., Brunthaler, G., Schäffler, F.

“…Near band edge photoluminescence (PL) is observed from about 100-nm-thick pseudomorphic Si1−yCy epilayers, which were grown by molecular beam epitaxy on a Si…”
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In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction by Zhuang, Y, Pietsch, U, Stangl, J, Holý, V, Darowski, N, Grenzer, J, Zerlauth, S, Schäffler, F, Bauer, G

“…Surface-sensitive X-ray grazing incidence diffraction (GID) was used to investigate the elastic strain relaxation in laterally periodic Si/SiGe wires, oriented…”
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Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si by SENZ, S, PLÖSSL, A, GÖSELE, U, ZERLAUTH, S, STANGL, J, BAUER, G

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Growth of partially strain-relaxed Si 1-y C y epilayers on (100)Si by Senz, S., Plössl, A., Gösele, U., Zerlauth, S., Stangl, J., Bauer, G.

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Electrical properties of Si1− x C x alloys and modulation doped Si/Si1− x C x /Si structures by Faschinger, W., Zerlauth, S., Bauer, G., Palmetshofer, L.

“…We report electrical properties of undoped and Sb-doped Si1−xCx alloys grown by molecular beam epitaxy. Nominally undoped alloy layers exhibit electron…”
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Molecular beam epitaxial growth and photoluminescence investigation of Si sub(1-y)C sub(y) layers by Zerlauth, S, Penn, C, Seyringer, H, Stangl, J, Brunthaler, G, Bauer, G, Schaffler, F

“…We studied the substitutional carbon incorporation in Si sub(1-y)C sub(y) layers grown by molecular beam epitaxy (MBE) on Si(100). We grew a series of…”
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Molecular beam epitaxial growth and photoluminescence investigation of Si 1− yC y layers by Zerlauth, S, Penn, C, Seyringer, H, Stangl, J, Brunthaler, G, Bauer, G, Schäffler, F

“…We studied the substitutional carbon incorporation in Si 1− y C y layers grown by molecular beam epitaxy (MBE) on Si(100). We grew a series of pseudomorphic Si…”
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Metastability of Si1−yCy epilayers under 2MeV α-particle irradiation by Berti, M, De Salvador, D, Drigo, A.V, Petrovich, M, Stangl, J, Schäffler, F, Zerlauth, S, Bauer, G, Armigliato, A

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MBE growth and structural characterization of [formula omitted] superlattices by Zerlauth, S., Stangl, J., Darhuber, A.A., Holý, V., Bauer, G., Schäffler, F.

“…We report on the MBE growth and X-ray characterization of Si1 − yCySi1 − xGex superlattices (SLs). The concentrations and thicknesses of the layers were chosen…”
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Metastability of Si 1− yC y epilayers under 2 MeV α-particle irradiation by Berti, M, De Salvador, D, Drigo, A.V, Petrovich, M, Stangl, J, Schäffler, F, Zerlauth, S, Bauer, G, Armigliato, A

“…In this work we present some recent results concerning the α-particles irradiation of Si 1− y C y alloy epitaxially grown on silicon. The study of the damage…”
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12C(α,α) 12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures by Berti, M., Salvador, D.De, Drigo, A.V., Romanato, F., Sambo, A., Zerlauth, S., Stangl, J., Schäffler, F., Bauer, G.

“…The incorporation of carbon into substitutional sites in Si or Si 1− x Ge x attracts increasing interest due to the enhanced possibilities in strain and band…”
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Metastability of Si1-yCy epilayers under 2 MeV alpha-particle irradiation by Berti, M, De Salvador D, Drigo, AV, Petrovich, M, Stangl, J, Schaffler, F, Zerlauth, S, Bauer, G, Armigliato, A

“…In this work we present some recent results concerning the alpha-particles irradiation of Si1-yCy alloy epitaxially grown on silicon. The study of the damage…”
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MBE growth and structural characterization of Si1-yCy/Si1-xGex superlattices by ZERLAUTH, S, STANGL, J, DARHUBER, A. A, HOLY, V, BAUER, G, SCHÄFFLER, F

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