Search Results - "Zeng, Zhongming"
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1
Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
Published in Nature communications (12-03-2020)“…Black phosphorus (BP) is a promising two-dimensional layered semiconductor material for next-generation electronics and optoelectronics, with a…”
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2
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
Published in Applied physics letters (01-09-2014)“…Extrinsic hysteresis effects are often observed in MoS2 field effect devices due to adsorption of gas molecules on the surface of MoS2 channel. Scaling is a…”
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3
The promise of spintronics for unconventional computing
Published in Journal of magnetism and magnetic materials (01-03-2021)“…•Spintronic technology can used to realize building blocks for unconventional computing paradigms.•Spintronic co-processor can be integrated with CMOS…”
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4
Multilevel storage device based on domain-wall motion in a magnetic tunnel junction
Published in Applied physics letters (30-10-2017)“…We report on a multilevel storage device based on a magnetic tunnel junction (MTJ). Six different resistance states have been observed by controlling domain…”
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5
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
Published in Nature communications (16-01-2019)“…Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after…”
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6
Bandwidth-enhanced magnetoelectric antenna based on composite bulk acoustic resonators
Published in Applied physics letters (18-07-2022)“…A bulk acoustic wave (BAW) driven magnetoelectric (ME) antenna has narrow operating bandwidth due to its high Q factor, and an effective mechanism for…”
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7
Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
Published in Advanced functional materials (01-03-2016)“…Black phosphorous (BP) is a unique layered p‐type semiconducting material. The successful use of BP nanosheets in field‐effect transistors fueled research on…”
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8
Electric-Field Control of Spin–Orbit Torques in WS2/Permalloy Bilayers
Published in ACS applied materials & interfaces (24-01-2018)“…Transition metal dichalcogenides (TMDs) have drawn great attention owing to their potential for electronic, optoelectronic, and spintronic applications. In…”
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9
Giant spin-torque diode sensitivity in the absence of bias magnetic field
Published in Nature communications (07-04-2016)“…Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to…”
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10
Radiation-enhanced acoustically driven magnetoelectric antenna with floating potential architecture
Published in Applied physics letters (14-11-2022)“…A magnetoelectric (ME) antenna driven by a high-overtone bulk acoustic resonator (HBAR) can play a potentially positive role in the bandwidth enhancement…”
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11
Electrical performance of multilayer MoS2 transistors on high- κ Al2O3 coated Si substrates
Published in AIP advances (01-05-2015)“…The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be…”
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12
Enhancement of spin–orbit torque in WTe2/perpendicular magnetic anisotropy heterostructures
Published in Applied physics letters (01-02-2021)“…Spin–orbit torque (SOT), exerted to a ferromagnet from an adjacent non-magnetic layer, has been widely considered as a promising strategy to realize spintronic…”
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13
High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric
Published in Applied physics letters (03-06-2024)“…GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) with scandium aluminum nitride Sc0.2Al0.8N/SiNX composite gate dielectric were…”
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14
Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal
Published in Advanced materials (Weinheim) (01-07-2020)“…One of the main bottleneck issues for room‐temperature antiferromagnetic spintronic devices is the small signal read‐out owing to the limited anisotropic…”
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15
Characterization of 87Rb MEMS vapor cells for miniature atomic magnetometers
Published in Applied physics letters (07-08-2023)“…Accurate characterization of atomic vapor cells is crucial for enhancing the sensitivity of miniature atomic magnetometers. In this study, a fast and efficient…”
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16
Enhanced magnetoresistance induced collaboratively by spin and orbital currents
Published in AIP advances (01-09-2024)“…Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization…”
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17
Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect
Published in ACS applied materials & interfaces (27-10-2021)“…Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the…”
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18
Ferromagnetic resonance manipulation by electric fields in Ni81Fe19/Bi3.15Nd0.85Ti2.99Mn0.01O12 multiferroic heterostructures
Published in Applied physics letters (22-10-2018)“…We investigated electric-field modulation of ferromagnetic resonance (FMR) in Ni81Fe19 (NiFe)/Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) heterostructures at room…”
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19
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Published in Scientific reports (12-03-2013)“…The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate…”
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20
Magnetoresistance and spin-torque effect in flexible nanoscale magnetic tunnel junction
Published in Applied physics letters (29-07-2019)“…Flexible electronics or hybrid electronics exhibit great potential for widespread applications in future wearable electronics. In this work, we fabricated…”
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