Search Results - "Zeng, Zhongming"

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  1. 1

    Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon by Xu, Yijun, Shi, Xinyao, Zhang, Yushuang, Zhang, Hongtao, Zhang, Qinglin, Huang, Zengli, Xu, Xiangfan, Guo, Jie, Zhang, Han, Sun, Litao, Zeng, Zhongming, Pan, Anlian, Zhang, Kai

    Published in Nature communications (12-03-2020)
    “…Black phosphorus (BP) is a promising two-dimensional layered semiconductor material for next-generation electronics and optoelectronics, with a…”
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  2. 2

    Scaling behavior of hysteresis in multilayer MoS2 field effect transistors by Li, Tao, Du, Gang, Zhang, Baoshun, Zeng, Zhongming

    Published in Applied physics letters (01-09-2014)
    “…Extrinsic hysteresis effects are often observed in MoS2 field effect devices due to adsorption of gas molecules on the surface of MoS2 channel. Scaling is a…”
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  3. 3

    The promise of spintronics for unconventional computing by Finocchio, Giovanni, Di Ventra, Massimiliano, Camsari, Kerem Y., Everschor-Sitte, Karin, Khalili Amiri, Pedram, Zeng, Zhongming

    “…•Spintronic technology can used to realize building blocks for unconventional computing paradigms.•Spintronic co-processor can be integrated with CMOS…”
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  4. 4

    Multilevel storage device based on domain-wall motion in a magnetic tunnel junction by Cai, Jialin, Fang, Bin, Wang, Chao, Zeng, Zhongming

    Published in Applied physics letters (30-10-2017)
    “…We report on a multilevel storage device based on a magnetic tunnel junction (MTJ). Six different resistance states have been observed by controlling domain…”
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  5. 5

    Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling by Chen, Aitian, Wen, Yan, Fang, Bin, Zhao, Yuelei, Zhang, Qiang, Chang, Yuansi, Li, Peisen, Wu, Hao, Huang, Haoliang, Lu, Yalin, Zeng, Zhongming, Cai, Jianwang, Han, Xiufeng, Wu, Tom, Zhang, Xi-Xiang, Zhao, Yonggang

    Published in Nature communications (16-01-2019)
    “…Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after…”
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  6. 6

    Bandwidth-enhanced magnetoelectric antenna based on composite bulk acoustic resonators by Yun, Xiaofan, Lin, Wenkui, Hu, Rui, Liu, Yizhang, Wang, Xiaoyi, Yu, Guohao, Zeng, Zhongming, Zhang, Xinping, Zhang, Baoshun

    Published in Applied physics letters (18-07-2022)
    “…A bulk acoustic wave (BAW) driven magnetoelectric (ME) antenna has narrow operating bandwidth due to its high Q factor, and an effective mechanism for…”
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  7. 7

    Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications by Hao, Chunxue, Wen, Fusheng, Xiang, Jianyong, Yuan, Shijun, Yang, Bingchao, Li, Lei, Wang, Wenhong, Zeng, Zhongming, Wang, Limin, Liu, Zhongyuan, Tian, Yongjun

    Published in Advanced functional materials (01-03-2016)
    “…Black phosphorous (BP) is a unique layered p‐type semiconducting material. The successful use of BP nanosheets in field‐effect transistors fueled research on…”
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  8. 8

    Electric-Field Control of Spin–Orbit Torques in WS2/Permalloy Bilayers by Lv, Weiming, Jia, Zhiyan, Wang, Bochong, Lu, Yuan, Luo, Xin, Zhang, Baoshun, Zeng, Zhongming, Liu, Zhongyuan

    Published in ACS applied materials & interfaces (24-01-2018)
    “…Transition metal dichalcogenides (TMDs) have drawn great attention owing to their potential for electronic, optoelectronic, and spintronic applications. In…”
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  9. 9

    Giant spin-torque diode sensitivity in the absence of bias magnetic field by Fang, Bin, Carpentieri, Mario, Hao, Xiaojie, Jiang, Hongwen, Katine, Jordan A., Krivorotov, Ilya N., Ocker, Berthold, Langer, Juergen, Wang, Kang L., Zhang, Baoshun, Azzerboni, Bruno, Amiri, Pedram Khalili, Finocchio, Giovanni, Zeng, Zhongming

    Published in Nature communications (07-04-2016)
    “…Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to…”
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  10. 10

    Radiation-enhanced acoustically driven magnetoelectric antenna with floating potential architecture by Yun, Xiaofan, Lin, Wenkui, Hu, Rui, Liu, Yizhang, Wu, Dongmin, Zhang, Xinping, Zeng, Zhongming, Zhang, Baoshun

    Published in Applied physics letters (14-11-2022)
    “…A magnetoelectric (ME) antenna driven by a high-overtone bulk acoustic resonator (HBAR) can play a potentially positive role in the bandwidth enhancement…”
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  11. 11

    Electrical performance of multilayer MoS2 transistors on high- κ Al2O3 coated Si substrates by Li, Tao, Wan, Bensong, Du, Gang, Zhang, Baoshun, Zeng, Zhongming

    Published in AIP advances (01-05-2015)
    “…The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be…”
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  12. 12

    Enhancement of spin–orbit torque in WTe2/perpendicular magnetic anisotropy heterostructures by Lv, Wenxing, Xue, Hongwei, Cai, Jialin, Chen, Qian, Zhang, Baoshun, Zhang, Zongzhi, Zeng, Zhongming

    Published in Applied physics letters (01-02-2021)
    “…Spin–orbit torque (SOT), exerted to a ferromagnet from an adjacent non-magnetic layer, has been widely considered as a promising strategy to realize spintronic…”
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  13. 13

    High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric by Huang, Qizhi, Deng, Xuguang, Zhang, Li, Lin, Wenkui, Cheng, Wei, Yu, Guohao, Ju, Tao, Mudiyanselage, Dinusha Herath, Wang, Dawei, Fu, Houqiang, Zeng, Zhongming, Zhang, Baoshun, Xu, Feng

    Published in Applied physics letters (03-06-2024)
    “…GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) with scandium aluminum nitride Sc0.2Al0.8N/SiNX composite gate dielectric were…”
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  14. 14

    Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal by Guo, Huixin, Feng, Zexin, Yan, Han, Liu, Jiuzhao, Zhang, Jia, Zhou, Xiaorong, Qin, Peixin, Cai, Jialin, Zeng, Zhongming, Zhang, Xin, Wang, Xiaoning, Chen, Hongyu, Wu, Haojiang, Jiang, Chengbao, Liu, Zhiqi

    Published in Advanced materials (Weinheim) (01-07-2020)
    “…One of the main bottleneck issues for room‐temperature antiferromagnetic spintronic devices is the small signal read‐out owing to the limited anisotropic…”
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  15. 15

    Characterization of 87Rb MEMS vapor cells for miniature atomic magnetometers by Jiang, Minwei, Zhai, Hao, Jiang, Chunyu, Wang, Jian, Chen, Chen, Zhang, Qi, Wu, Dongmin, Zhang, Baoshun, Zeng, Zhongming, Lin, Jie, Wang, Yiqun, Jin, Peng

    Published in Applied physics letters (07-08-2023)
    “…Accurate characterization of atomic vapor cells is crucial for enhancing the sensitivity of miniature atomic magnetometers. In this study, a fast and efficient…”
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  16. 16

    Enhanced magnetoresistance induced collaboratively by spin and orbital currents by Yang, Shuyi, Liu, Jinnan, Liu, Huan, Li, Yongji, Zhang, Wei, Zeng, Zhongming, Quan, Zhiyong

    Published in AIP advances (01-09-2024)
    “…Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization…”
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  17. 17

    Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect by Lei, Ting, Tu, Huayao, Lv, Weiming, Ma, Haixin, Wang, Jiachen, Hu, Rui, Wang, Qilitai, Zhang, Like, Fang, Bin, Liu, Zhongyuan, Shi, Wenhua, Zeng, Zhongming

    Published in ACS applied materials & interfaces (27-10-2021)
    “…Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the…”
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  18. 18

    Ferromagnetic resonance manipulation by electric fields in Ni81Fe19/Bi3.15Nd0.85Ti2.99Mn0.01O12 multiferroic heterostructures by Xiong, Rongxin, Zhang, Wanli, Fang, Bin, Li, Gang, Li, Zheng, Zeng, Zhongming, Tang, Minghua

    Published in Applied physics letters (22-10-2018)
    “…We investigated electric-field modulation of ferromagnetic resonance (FMR) in Ni81Fe19 (NiFe)/Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) heterostructures at room…”
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  19. 19

    Ultralow-current-density and bias-field-free spin-transfer nano-oscillator by Zeng, Zhongming, Finocchio, Giovanni, Zhang, Baoshun, Amiri, Pedram Khalili, Katine, Jordan A., Krivorotov, Ilya N., Huai, Yiming, Langer, Juergen, Azzerboni, Bruno, Wang, Kang L., Jiang, Hongwen

    Published in Scientific reports (12-03-2013)
    “…The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate…”
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  20. 20

    Magnetoresistance and spin-torque effect in flexible nanoscale magnetic tunnel junction by Wu, Weican, Zhang, Like, Cai, Jialin, Fang, Bin, Luo, Jun, Zeng, Zhongming

    Published in Applied physics letters (29-07-2019)
    “…Flexible electronics or hybrid electronics exhibit great potential for widespread applications in future wearable electronics. In this work, we fabricated…”
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