Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices

Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces. This is made possible by separate and independent control of (i) plasma excited O- and N-atom deposition precursors in a up-stream plasma cham...

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Bibliographic Details
Published in:	Surface & coatings technology Vol. 242; pp. 183 - 186
Main Authors:	Lucovsky, G., Zeller, D.J., Cheng, C., Zhang, Y.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-03-2014 Elsevier
Subjects:	Cross-disciplinary physics: materials science; rheology Exact sciences and technology Fine grain polycrystalline Si Hydrogenated amorphous Si Materials science Medium range order Methods of deposition of films and coatings; film growth and epitaxy Photovoltaic applications Physics Surface treatments Thin film transistors Medium range order Photovoltaic applications Hydrogenated amorphous Si Thin film transistors Fine grain polycrystalline Si Thin films Plasma Surface treatments Amorphous alloy Application Defects
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Summary:	Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces. This is made possible by separate and independent control of (i) plasma excited O- and N-atom deposition precursors in a up-stream plasma chamber, combined with (ii) down-stream injection of Si- and Ge-atoms with control gas flow rates providing control of buried interface bonding at monolayer levels. Devices with intrinsic, B p-type and P n-type “a-Si(H)” & “a-Si,Ge(H)” layers require 10% bonded H in monolayer (SiH arrangements) and deposition and/or annealing at temperatures between 240 and 275°C. Deposition from SiH4 with either PH3 or B2H6 dopant gasses provides spectrally reflecting films which can be annealed yielding fine-grain films for gate, or source and drain regions for TFTs or FETs. •Definitions of short and medium range order: SRO and MRO•XAS spectroscopic identifications of SRO and MRO•SRO in a-Si (no hydrogen) and a-Si(H) with 25% H•MRO in a-Si(H) with 10% H and processed at >240°C•Symmetry-determined LRO cancelations in SE and Si L2,3 spectra
ISSN:	0257-8972 1879-3347
DOI:	10.1016/j.surfcoat.2013.06.104