Search Results - "Zegaoui, M"

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz by Medjdoub, F., Zegaoui, M., Grimbert, B., Ducatteau, D., Rolland, N., Rolland, P. A.

“…In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time…”
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High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate by Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

“…In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition-grown SiN have…”
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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers by Di Gioia, G., Frayssinet, E., Samnouni, M., Chinni, V., Mondal, P., Treuttel, J., Wallart, X., Zegaoui, M., Ducournau, G., Roelens, Y., Cordier, Y., Zaknoune, M.

“…Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial…”
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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate by Medjdoub, F., Zegaoui, M., Rolland, N., Rolland, P. A.

“…High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular…”
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Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band by Kabouche, R., Okada, E., Dogmus, E., Linge, A., Zegaoui, M., Medjdoub, F.

“…We report on the development of a nonlinear vector network analyzer power measurement setup for on-wafer large signal device characterization up to the Q-band…”
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Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate by Medjdoub, F., Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.

“…Microwave noise performance of state-of-the-art AIN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and…”
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Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery by Lethien, C., Zegaoui, M., Roussel, P., Tilmant, P., Rolland, N., Rolland, P.A.

“…The paper deals with the methodology used to form regular pattern of sputtered thin films LiPON/LiFePO 4 material acting respectively as the solid electrolyte…”
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Degradation of InGaN-based MQW solar cells under 405 nm laser excitation by De Santi, C., Meneghini, M., Caria, A., Dogmus, E., Zegaoui, M., Medjdoub, F., Zanoni, E., Meneghesso, G.

“…Within this paper we analyze the reliability of 25 × multi quantum well InGaN-based devices, designed to be used as high power photodetectors or in…”
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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz by Medjdoub, F., Tagro, Y., Zegaoui, M., Grimbert, B., Danneville, F., Ducatteau, D., Rolland, N., Rolland, P. A.

“…We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up…”
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Thermal management of electronic devices by composite materials integrated in silicon by Ollier, Emmanuel, Soupremanien, U., Remondière, V., Dijon, J., Le Poche, H., Seiler, A.L., Lefevre, F., Lips, S., Kinkelin, C., Rolland, N., Rolland, P.A., Zegaoui, M., Lhostis, S., Ancey, P., Descouts, B., Kaplan, Y.

“…[Display omitted] •A novel concept of thermal management based on CNT and PCM is proposed.•Simulations show the benefits of the nanocomposite structure for…”
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2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications by Zegaoui, M., Choueib, N., Harari, J., Decoster, D., Magnin, V., Wallart, X., Chazelas, J.

“…This letter demonstrates a 2times2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP…”
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A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55- \mu m Applications by Zegaoui, M., Decoster, D., Harari, J., Magnin, V., Wallart, X., Chazelas, J.

“…This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS) designed to achieve a low optical crosstalk for 1.55-mum…”
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Design Considerations for 1.3 $\mu$m GaNAsSb–GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors by Xu, Z., Yoon, S. F., Loke, W. K., Ngo, C. Y., Tan, K. H., Wicaksono, S., Saadsaoud, N., Decoster, D., Zegaoui, M., Chazelas, J.

“…The electrical and optical characteristics of a 1.3 mum GaNAsSb-GaAs p-i-n waveguide photodetector (WGPD), consisting of GaAs inner and Al sub(x)Ga sub(1-x)As…”
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Design Considerations for 1.3 \mum GaNAsSb-GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors by Xu, Z., Yoon, S.F., Loke, W.K., Ngo, C.Y., Tan, K.H., Wicaksono, S., Saadsaoud, N., Decoster, D., Zegaoui, M., Chazelas, J.

“…The electrical and optical characteristics of a 1.3 mum GaNAsSb-GaAs p-i-n waveguide photodetector (WGPD), consisting of GaAs inner and Al x Ga 1-x As outer…”
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Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires by Lauvernier, D, Garidel, S, Zegaoui, M, Vilcot, J P, Harari, J, Magnin, V, Decoster, D

“…We demonstrated the potential application of III-V/polymer nanowires for photonic integrated circuits in a previous paper. Hereby, we report the use of a spot…”
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A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties by Zegaoui, M., Choueib, N., Tilmant, P., François, M., Legrand, C., Chazelas, J., Decoster, D.

“…This paper reports on an easy and quick planarization and passivation technique of III–V compound semiconductor compatible with nanoscale devices. Vertical…”
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Up to 100 Gbit/s short link using 300 GHz band Yagi-Uda antenna by Bandyopadhyay, Aritrio, Pavanello, Fabio, Peytavit, Emilien, Lampin, J. F., Zegaoui, M., Zaknoune, M., Szriftgiser, P., Ducournau, G.

“…We report on the use of a Yagi-Uda antenna on polymer substrate used for indoor 300 GHz data-link applications. The Yagi-Uda antenna-based data-link is…”
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300 GHz link enabled by Yagi-Uda antenna by Ducournau, G., Pavanello, Fabio, Belem-Goncalves, C., Gianesello, Frederic, Luxey, Cyril, Peytavit, Emilien, Lampin, J. F., Zegaoui, M., Zaknoune, M.

“…This paper presents the use of a Yagi-Uda antenna on polymer substrate for 300 GHz data communications. The antenna is described and characterized in terms of…”
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Effect of dimensional parameters on the current of MSM photodetector by Zebentout, A.D., Bensaad, Z., Zegaoui, M., Aissat, A., Decoster, D.

“…In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM…”
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High frequency high breakdown voltage GaN transistors by Medjdoub, F., Herbecq, N., Linge, A., Zegaoui, M.

“…In this work, high performance ultrathin barrier GaN devices for high frequency applications are presented. In particular, key features to achieve significant…”
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