Search Results - "Zasavitskii, I. I."

Study of Etching Features of Quartz Glass Irradiated with Xenon Ions by Apel, P. Yu, Chernyavsky, M. M., Gippius, A. A., Kalinina, G. V., Konovalova, N. S., Okateva, N. M., Polukhina, N. G., Sadykov, Zh. T., Shchedrina, T. V., Starkov, N. I., Starkova, E. N., Zasavitskii, I. I.

“…The first results of testing KU-2 optical quartz glass as a detector of accelerated heavy ions are presented. The results of etching the irradiated glasses in…”
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Background Phenomena in Phosphate Glass Detectors by Chernyavskiy, M. M., Gippius, A. A., Kalinina, G. V., Konovalova, N. S., Okateva, N. M., Polukhina, N. G., Sadykov, Zh. T., Shchedrina, T. V., Starkov, N. I., Starkova, E. N., Zasavitskii, I. I.

“…The results of the study of recording properties of KNFS-3 phosphate glass as a material for heavy ion detectors are presented. The contribution of possible…”
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Identification of Multiply Charged Ions by Means of Detectors Based on Phosphate Glass by Argynova, K., Burtebayev, N., Chernyavsky, M. M., Gippius, A. A., Konovalova, N. S., Kvochkina, T. N., Nassurlla, M., Okateva, N. M., Pan, A., Polukhina, N. G., Sadykov, Zh. T., Shchedrina, T. V., Starkov, N. I., Starkova, E. N., Zasavitskii, I. I.

“…The detection and identification of heavy ions in phosphate glasses is based on an analysis of geometric parameters of tracks that manifest themselves upon the…”
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Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE by Ladugin, Maxim A., Yarotskaya, Irina V., Bagaev, Timur A., Telegin, Konstantin Yu, Andreev, Andrey Yu, Zasavitskii, Ivan I., Padalitsa, Anatoliy A., Marmalyuk, Alexander A.

“…AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special…”
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Investigation of Etching Modes of Heavy Ion Detectors Made of Phosphate Glass by Burtebayev, N., Argynova, K., Chernyavskiy, M. M., Gippius, A. A., Kalinina, G. V., Konovalova, N. S., Nassurlla, M., Okateva, N. M., Pan, A., Polukhina, N. G., Sadykov, Zh. T., Shchedrina, T. V., Starkov, N. I., Starkova, E. N., Zasavitskii, I. I.

“…The results obtained in a test experiment on the choice of etching mode of phosphate glass detectors irradiated with accelerated heavy ions are presented…”
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Method for Determining the Etching Rate in Phosphate Glass Detectors by Burtebayev, N., Argynova, K., Chernyavskiy, M. M., Gippius, A. A., Kalinina, G. V., Konovalova, N. S., Kvochkina, T. N., Nassurlla, M., Okateva, N. M., Pan, A. N., Polukhina, N. G., Sadykov, Zh. T., Shchedrina, T. V., Starkov, N. I., Starkova, E. N., Zasavitskii, I. I.

“…A method for determining the etching rate of phosphate glass irradiated with heavy ions is presented. The etching rates in the track area and in the undamaged…”
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Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors by Maremyanin, K. V., Ikonnikov, A. V., Bovkun, L. S., Rumyantsev, V. V., Chizhevskii, E. G., Zasavitskii, I. I., Gavrilenko, V. I.

“…On the basis of a Pb 1 – x Sn x Se solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm…”
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Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm by Maremyanin, K. V., Rumyantsev, V. V., Ikonnikov, A. V., Bovkun, L. S., Chizhevskii, E. G., Zasavitskii, I. I., Gavrilenko, V. I.

“…Diffusion injection lasers based on Pb 1 – x Sn x Se alloy, emitting in a wide spectral range of 10–46.5 μm depending on the composition and temperatures are…”
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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser by Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.

“…Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and…”
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Low-temperature persistent afterglow in opal photonic crystals under pulsed UV excitation by Gorelik, V. S., Esakov, A. A., Zasavitskii, I. I.

“…Excitation of synthetic opal with 337.1-nm nitrogen laser pulses gives rise to a persistent afterglow, lasting 15 s at 10 K. The afterglow spectrum correlates…”
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Molecular beam epitaxy of Pb1 − xEuxTe and Pb1 − xSnxTe layers and related periodic structures by Selivanov, Yu. G., Chizhevskii, E. G., Martovitskiy, V. P., Knotko, A. V., Zasavitskii, I. I.

“…Layers and periodic Bragg structures based on Pb 1 − x Eu x Te (0 < x < 1) and Pb 1 − x Sn x Te (0 < x < 0.1) ternary solid solutions have been grown on (111)…”
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Quantum cascade laser grown by MOCVD and operating at 9,7 μm by Ladugin, M. A., Andreev, A. Yu, Bagaev, T. A., Gorlachuk, P. V., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Ryaboshtan, Yu L., Sapozhnikov, S. M., Simakov, V. A., Telegin, K. Yu, Zasavitskii, I. I., Zubov, A. N.

“…A quantum cascade laser emitting in the spectral range of 9.7 μm at 77 K has been developed. The laser heterostructure based on GaAs/AlGaAs was grown by the…”
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THz lasers based on narrow-gap semiconductors by Gavrilenko, V.I., Morozov, S.V., Rumyantsev, V.V., Bovkun, L.S., Kadykov, A.M., Maremyanin, K.V., Umbetalieva, K. R., Chizhevskii, E. G., Zasavitskii, I. I., Mikhailov, N.N., Dvoretskii, S.A.

“…We report recent results on THz lasing in PbSnSe and HgCdTe. The wavelength of 46.3 microns was achieved in a PbSnSe laser with diffusion p-n junction. In…”
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Transmission spectra of epitaxial layers of Pb1 − x Eu x Te (0 ≤ x ≤ 0.37) solid solutions in the frequency range 7–4000 cm−1 by Zhukova, E. S., Aksenov, N. P., Gorshunov, B. P., Selivanov, Yu. G., Zasavitskii, I. I., Wu, D., Dressel, M.

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Molecular beam epitaxy of Pb1 − x Eu x Te and Pb1 − x Sn x Te layers and related periodic structures by Selivanov, Yu. G., Chizhevskii, E. G., Martovitskiy, V. P., Knotko, A. V., Zasavitskii, I. I.

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Transmission spectra of epitaxial layers of Pb1 − xEuxTe (0 ≤ x ≤ 0.37) solid solutions in the frequency range 7–4000 cm−1 by Zhukova, E. S., Aksenov, N. P., Gorshunov, B. P., Selivanov, Yu. G., Zasavitskii, I. I., Wu, D., Dressel, M.

“…The spectra of epitaxial Pb 1 − x Eu x Te (0 ≤ x ≤ 0.37) solid solution layers grown on BaF 2 and Si substrates have been investigated over a wide frequency…”
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Radiative transitions to localized Eu states in Pb1−x Eu x Te solid solutions by Zasavitskii, I. I., Mazurin, A. V., Selivanov, Yu. G., Zogg, H., Yurushkin, A. V.

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Radiative transitions to localized Eu states in Pb1−xEuxTe solid solutions by Zasavitskii, I. I., Mazurin, A. V., Selivanov, Yu. G., Zogg, H., Yurushkin, A. V.

“…Two types of radiative transitions were observed in the low-temperature photoluminescence spectra of Pb 1− x Eu x Te (0 ≤ x ≤ 0.09) solid solutions: an intense…”
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Energy spectrum of quantum wells in PbTe/PbEuTe-based structures from photoluminescence data by Zasavitskii, I. I., Bushuev, E. V., Andrada-e-Silva, E. A., Abramof, E.

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Optical deformation potentials for PbSe and PbTe by Zasavitskii, I. I., de Andrada e Silva, E. A., Abramof, E., McCann, P. J.

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