Effects of Cu/In ratio and annealing temperature on physical properties of dip-coated CuInS2 thin films

CuInS2 thin films were prepared by sol–gel dip-coating method on glass substrates using 0.75, 1 and 1.25 ratios of Cu/In in the solution. The prepared films were annealed at 380°C, 420°C and 460°C for 30min under argon environment. The structural, optical, morphological and composition properties of...

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Bibliographic Details
Published in:	Materials science in semiconductor processing Vol. 16; no. 1; pp. 138 - 142
Main Authors:	Aslan, F., Zarbali, M.Z., Yesilata, B., Mutlu, I.H.
Format:	Journal Article
Language:	English
Published:	Kidlington Elsevier Ltd 01-02-2013 Elsevier
Subjects:	Annealing Applied sciences Copper Cross-disciplinary physics: materials science; rheology CuInS2 Dip coatings Exact sciences and technology Heat treatment Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Materials synthesis; materials processing Metals. Metallurgy Methods of deposition of films and coatings; film growth and epitaxy Physics Production techniques Semiconductors Solar Cells Sol–gel method Spectrometers Surface treatment Thin films X-rays Thin films Sol–gel method Solar Cells CuInS2 Ternary compound Sol-gel method X ray spectrum Polycrystal Glass Annealing temperature Coatings Thin film Energy gap Copper sulfide Optoelectronic device Dip coating Argon Copper Indium sulfide Scanning electron microscopy Annealing Absorption coefficient Dispersive spectrometry X ray diffraction Transmittance Physical properties Coated material Solar cell Chalcopyrite Sol gel process Ultraviolet visible spectrum CuInS Ultraviolet visible spectrometry
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Summary:	CuInS2 thin films were prepared by sol–gel dip-coating method on glass substrates using 0.75, 1 and 1.25 ratios of Cu/In in the solution. The prepared films were annealed at 380°C, 420°C and 460°C for 30min under argon environment. The structural, optical, morphological and composition properties of those were investigated by X-ray diffraction (XRD), UV–vis transmittance spectroscopy and scanning electron microscopy with an energy dispersive X-ray spectrometer. The XRD results showed that the films exhibit polycrystalline tetragonal CuInS2 phase with (112) orientation. According to the EDX results the Cu/In ratios of the films were respectively 0.65, 0.92 and 1.35 for the Cu/In ratios of 0.75, 1 and 1.25 in the solutions. The optical band gap was found to be between 1.30eV and 1.43eV, depending on Cu/In ratio.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1369-8001 1873-4081
DOI:	10.1016/j.mssp.2012.05.015