Search Results - "Zanaveskin, M. L"

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures by Lev, L. L., Maiboroda, I. O., Husanu, M.-A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., Chernykh, I. A., Wang, X., Tobler, B., Schmitt, T., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

“…Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing…”
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Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates by Andreev, A. A., Grishchenko, Yu. V., Ezubchenko, I. S., Chernykh, M. Ya, Kolobkova, E. M., Maiboroda, I. O., Chernykh, I. A., Zanaveskin, M. L.

“…s Ammonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors…”
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Technical Storage Ring Complex “Zelenograd” As a Base for an Engineering Center of Advanced Materials, Microelectronics, and Biomedical Technologies by Kovalchuk, M. V., Naraikin, O. S., Zanaveskin, M. L.

“…The town of Zelenograd was created as the main research and production center of the Soviet microelectronics industry. The Zelenograd Microelectronics Centre…”
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Specifics of Heat Transfer in AlxGa1 – xN/GaN Heterostructures on Sapphire by Chernodubov, D. A., Maiboroda, I. O., Zanaveskin, M. L., Inyushkin, A. V.

“…The thermal conductivity of Al x Ga 1 –   x N/GaN heterostructures (0.05 ≤ x ≤ 1) fabricated on sapphire by molecular beam epitaxy is measured. The thermal…”
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Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow by Mayboroda, I. O., Kolobkova, E. M., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Chumakov, N. K.

“…The formation of β-Si 3 N 4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide…”
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High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition by Ezubchenko, I. S., Chernykh, M. Ya, Mayboroda, I. O., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

“…The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has…”
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Transistors with High Electron Mobility Based on Gallium-Nitride Heterostructures for Millimeter Wavelengths by Ezubchenko, I S, Kolobkova, E M, Andreev, A A, Ya, Chernykh M, Grishchenko, Yu V, Perminov, P A, Chernykh, I A, Zanaveskin, M L

“…Abstract—Microwave transistors based on AlN/GaN heterostructures on silicon substrates are fabricated and studied. The maximum specific saturation current is…”
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GaN-on-Silicon Growth Features: Controlled Plastic Deformation by Ezubchenko, I. S., Chernykh, M. Ya, Perminov, P. A., Grishchenko, J. V., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

“…Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapor deposition. Plastic deformations of the substrate are observed…”
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Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor deposition by Chernykh, M.Y., Ezubchenko, I.S., Mayboroda, I.O., Zanaveskin, M.L.

“…•The main factor influencing the AlN films quality is the degree of the aluminium substrate coating.•Significant aluminium substrate coating leads to the…”
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YBa2Cu3Ox-SrTiO3 multilayer approach on textured Ni-W tapes: Morphology, structure and critical current density improvement by Krylova, T.S., Chernykh, I.A., Chernykh, M.Y., Krasnoperov, E.P., Zanaveskin, M.L.

“…Multilayer epitaxial structure YBa2Cu3Ox–interlayer–YBa2Cu3Ox is a promising architecture for YBa2Cu3Ox (YBCO) superconductors. We formed single YBCO layers…”
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A Superconducting Joint for 2G HTS Tapes by Kulikov, I. V., Chernykh, M. Y., Krylova, T. S., Ovcharov, A. V., Chernykh, I. A., Zanaveskin, M. L.

“…An approach of the epitaxial jointing of the GdBa 2 Cu 3 O 7 – δ -based tapes using the YBa 2 Cu 3 O 7 – δ layer is proposed. The structural and electrical…”
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Impact of band-bending on the k-resolved electronic structure of Si-doped GaN by Lev, L. L., Maiboroda, I. O., Grichuk, E. S., Chumakov, N. K., Schröter, N. B. M., Husanu, M.-A., Schmitt, T., Aeppli, G., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

“…Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A…”
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Substrates with Diamond Heat Sink for Epitaxial GaN Growth by Maiboroda, I. O., Chernykh, I. A., Sedov, V. S., Altakhov, A. S., Andreev, A. A., Grishchenko, Yu. V., Kolobkova, E. M., Mart’yanov, A. K., Konov, V. I., Zanaveskin, M. L.

“…Silicon wafers with a polycrystalline diamond heat sink have been fabricated; the silicon and diamond layers have thicknesses of 234 nm and 250 μm,…”
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Power Characteristics of GaN Microwave Transistors on Silicon Substrates by Chernykh, I. A., Romanovskiy, S. M., Andreev, A. A., Ezubchenko, I. S., Chernykh, M. Y., Grishchenko, J. V., Mayboroda, I. O., Korneev, S. V., Krymko, M. M., Zanaveskin, M. L., Sinkevich, V. F.

“…GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are…”
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Ohmic Contacts to Europium Oxide for Spintronic Devices by Andreev, A. A., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Lobanovich, E. F.

“…A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage…”
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Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors by Ezubchenko, I. S., Chernykh, M. Y., Andreev, A. A., Grishchenko, J. V., Chernykh, I. A., Zanaveskin, M. L.

“…— A unique method for forming gallium nitride–based heterostructures on silicon substrates at low growth temperatures (less than 950°C) is proposed and…”
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Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures by Chumakov, N. K., Chernykh, I. A., Davydov, A. B., Ezubchenko, I. S., Grishchenko, Yu. V., Lev, L. L., Maiboroda, I. O., Morgun, L. A., Strocov, V. N., Valeyev, V. G., Zanaveskin, M. L.

“…The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The…”
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Formation of a Memristive Array of Crossbar-Structures Based on (Co40Fe40B20)x(LiNbO3)100 Nanocomposite by Nikiruy, K. E., Emelyanov, A. V., Rylkov, V. V., Sitnikov, A. V., Presnyakov, M. Yu, Kukueva, E. V., Grishchenko, Yu. V., Minnekhanov, A. A., Chernoglazov, K. Yu, Nikolaev, S. N., Chernykh, I. A., Zanaveskin, M. L., Demin, V. A.

“…The possibility of scaling of recently developed memristors of a new type based on (Co 40 Fe 40 B 20 ) x (LiNbO 3 ) 100 – x is shown. The scaling is carried…”
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Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates by Chernykh, M. Y., Ezubchenko, I. S., Mayboroda, I. O., Chernykh, I. A., Kolobkova, E. M., Perminov, P. A., Sedov, V. S., Altakhov, A. S., Andreev, A. A., Grishchenko, J. V., Martyanov, A. K., Konov, V. I., Zanaveskin, M. L.

“…A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-μm thick polycrystalline…”
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Influence of High-Temperature Annealing of the Textured Metal Ni–W Substrate on the Structural Properties of Seed Layer in HTS 2G tapes by Chernykh, M. Y., Krylova, T. S., Kulikov, I. V., Chernykh, I. A., Zanaveskin, M. L.

“…The surface reconstruction of the textured metal tapes at the temperatures typical for the formation of the seed buffer Y 2 O 3 layer of HTS 2G tapes have been…”
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