Search Results - "Zan, Yude"

Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process by Tan, Liwen, Zan, Yude, Wang, Jun, Wang, Qiyuan, Yu, Yuanhuan, Wang, Shurui, Liu, Zhongli, Lin, Lanying

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The growth and characterization of GaN grown on an Al2O3 coated (0 0 1)Si substrate by metalorganic vapor phase epitaxy by LIANSHAN WANG, XIANGLIN LIU, YUDE ZAN, DU WANG, LU, D.-C, ZHANGUO WANG, YUTIAN WANG, LISEN CHENG, ZE ZHANG

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Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing by Wang, Qiyuan, Zan, Yude, Wang, Jianhua, Yu, Yuanhuan

“…Chemically vapour deposited silicon on sapphire (SOS) films 0.25 μm thick were implanted with 28Si + and recrystallized in solid phase by furnace annealing…”
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Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates by Wang Lianshan, Liu, Xianglin, Yude, Zan, Wang, Du, Wang, Jun, Lu Dacheng, Wang, Zhanguo

“…Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition…”
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Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer by Wang, Lianshan, Liu, Xianglin, Zan, Yude, Wang, Jun, Wang, Du, Lu, Da-cheng, Wang, Zhanguo

“…Wurtzite GaN films have been grown on (001) Si substrates using γ-Al2O3 as an intermediate layer by low pressure (∼76 Torr) metalorganic chemical vapor…”
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Very low-pressure VLP-CVD growth of high quality γ-Al 2O 3 films on silicon by multi-step process by Tan, Liwen, Zan, Yude, Wang, Jun, Wang, Qiyuan, Yu, Yuanhuan, Wang, Shurui, Liu, Zhongli, Lin, Lanying

“…γ-Al 2O 3 films were grown on Si (1 0 0) substrates using the sources of TMA (Al(CH 3) 3) and O 2 by very low-pressure chemical vapor deposition. The effects…”
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The growth and characterization of GaN grown on an Al 2O 3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy by Wang, Lianshan, Liu, Xianglin, Zan, Yude, Wang, Du, Lu, Da-Cheng, Wang, Zhanguo, Wang, Yutian, Cheng, Lisen, Zhang, Ze

“…Single crystal GaN films have been grown on to an Al 2O 3 coated (0 0 1)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al 2O 3 layer is an…”
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