Search Results - "Zalm, PC"

Diffusion in strained Si(Ge) by Cowern, NE, Zalm, PC, van der Sluis P, Gravesteijn, DJ, de Boer WB

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Dynamic SIMS: Quantification at All Depths? by Zalm, Peer C.

“…Present day ultra-large scale integration technology exploits the variation of material properties on a nanometer scale and requires analytical methods that…”
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Overlayer corrections in XPS by Zalm, P. C.

“…It appears that the same scaling law applies to the attenuation of bulk XPS signals by thin uniform overlayers on rough surfaces, on powdered samples or when…”
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Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si by van den Berg, J. A., Reading, M. A., Armour, D. G., Carter, G., Zalm, P. C., Bailey, P., Noakes, T. C.Q.

“…As junction depths in advanced semiconductor devices move to below 20 nm, the process of disorder evolution during ion implantation at ultra low energies…”
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Oxygen-mediated Mn diffusion in magnetic tunnel junctions comprising a nano-oxide layer by Boeve, H., Vanhelmont, F., Zalm, P.C.

“…Mn diffusion toward the tunnel barrier in the hard layer system of a magnetic tunnel junction is recognized as the limitation for the temperature stability. In…”
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Mechanisms of implant damage annealing and transient enhanced diffusion in Si by Cowern, N. E. B., van de Walle, G. F. A., Zalm, P. C., Vandenhoudt, D. W. E.

“…Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels…”
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Experimental evidence for secondary excitation in X-ray photoelectron spectrometry by Ebel, Maria F., Svagera, Robert, Ashury, Reza, Ebel, Horst, Zalm, Peter C., Van der Marel, Cees

“…Theoretical considerations of X-ray fluorescence analysis show that secondary excitation of characteristic radiations can contribute up to 30% to measured…”
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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy by ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning? by Zalm, P. C., van den Berg, J. A., van Berkum, J. G. M., Bailey, P., Noakes, T. C. Q.

“…In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1–1 keV) oblique-angle…”
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Proximity gettering of transition metals in silicon by ion implantation by Overwijk, M.H.F., Politiek, J., de Kruif, R.C.M., Zalm, P.C.

“…We compare the gettering efficiency of C, O and He implantation into Cz-grown silicon. After the getter implantation, with a projected range of 1.2 μm, we…”
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Reactions of point defects and dopant atoms in silicon by COWEN, N. E. B, VAN DE WALLE, G. F. A, ZALM, P. C, OOSTRA, D. J

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Fluorescence-based photoelectron features in Auger spectra by Zalm, P. C., Toussaint, S. L. G., Crombeen, J. E.

“…The use of energetic (≥10 keV) electron beams in Auger electron spectroscopy is becoming more and more standard practice because of their superior focusability…”
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X-ray-induced Metal Reduction in Polymer Hosts by Vreugdenhil, F., Hagenhoff, B., Zalm, P. C.

“…We report the rapid modification of the palladium 3d photoelectron spectrum obtained from a mixed PdCl2/PVP (polyvinylpyrrolidone) film on glass. Chemical…”
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Characterization of epitaxial layers by the depth dependence of boron diffusivity by VAN OOSTRUM, K. J, ZALM, P. C, DE BOER, W. B, GRAVESTEIJN, D. J, MAES, J. W. F

“…Differences in boron diffusivity have been used to characterize epitaxially grown silicon layers. After oxidation-enhanced diffusion of boron spikes, a…”
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Si ultrashallow p+n junctions using low-energy boron implantation by BOUSETTA, A, VAN DEN BERG, J. A, ARMOUR, D. G, ZALM, P. C

“…Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were…”
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Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K by Zalm, P. C., Beckers, L. J.

“…Epitaxial growth of silicon on Ge (100), Si (100) and Si (111) wafers at substrate temperatures close to 400 K was observed in ion beam deposition experiments…”
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Can carbon-implanted silicon be applied as wide-bandgap emitter? by Oostra, D. J., Politiek, J., Bulle-Lieuwma, C. W. T., Vandenhoudt, D. E. W., Zalm, P. C.

“…We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si…”
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Elementary processes in plasma-surface interactions with emphasis on ions by Zalm, P. C.

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Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition by ROKSNOER, P. J, MAES, J. W. F. M, VINK, A. T, VRIEZEMA, C. J, ZALM, P. C

“…Boron-doping spikes in Si have been grown by fast gas switching chemical vapor deposition at 800 or 850 °C using Si2H6 in 0.03 or 0.1 atm H2, respectively. The…”
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Sharp phosphorus spikes in silicon grown by fast gas-switching chemical vapor deposition at reduced and atmospheric pressure by ROKSNOER, P. J, MAES, J. W. F. M, WINK, A. T, VRIEZEMA, C. J, ZALM, P. C

“…Sharp phosphorus doping spikes in silicon were grown by fast-gas-switching chemical vapor deposition at temperatures between 800 and 850 °C using disilane and…”
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