Search Results - "Zakharov, N. D."

The Role of Surface Passivation in Controlling Ge Nanowire Faceting by Gamalski, A. D, Tersoff, J, Kodambaka, S, Zakharov, D. N, Ross, F. M, Stach, E. A

“…In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form…”
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Nitrogen-doped graphene by microwave plasma chemical vapor deposition by Kumar, A., Voevodin, A.A., Paul, R., Altfeder, I., Zemlyanov, D., Zakharov, D.N., Fisher, T.S.

“…Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during…”
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Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location by Edmunds, C., Tang, L., Shao, J., Li, D., Cervantes, M., Gardner, G., Zakharov, D. N., Manfra, M. J., Malis, O.

“…We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a…”
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Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy by Schubert, L., Werner, P., Zakharov, N. D., Gerth, G., Kolb, F. M., Long, L., Gösele, U., Tan, T. Y.

“…Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called…”
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Aperiodic SiSn/Si multilayers for thermoelectric applications by Tonkikh, A.A., Zakharov, N.D., Eisenschmidt, C., Leipner, H.S., Werner, P.

“…We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This…”
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Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy by Zakharov, N.D., Werner, P., Gerth, G., Schubert, L., Sokolov, L., Gösele, U.

“…We report on the formation of Si and SiGe nanowires (NW) by molecular beam epitaxy (MBE) initiated via gold droplets. The MBE growth behavior essentially…”
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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters by Yurasov, D.V., Drozdov, M.N., Zakharov, N.D., Novikov, A.V.

“…In the present work features of antimony (Sb) segregation in SiGe heterostructures grown by molecular beam epitaxy are investigated. Dependences of the…”
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Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching by Vrejoiu, I., Le Rhun, G., Zakharov, N. D., Hesse, D., Pintilie, L., Alexe, M.

“…The existence of threading dislocations in ferroelectric heterostructures has been frequently reported. However, their origin and impact on the ferroelectric…”
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Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method by Hutchison, J.L., Kiselev, N.A., Krinichnaya, E.P., Krestinin, A.V., Loutfy, R.O., Morawsky, A.P., Muradyan, V.E., Obraztsova, E.D., Sloan, J., Terekhov, S.V., Zakharov, D.N.

“…Double walled carbon nanotubes (DWNTs) were obtained by the arc discharge technique in an atmosphere of Ar and H 2 mixture (1:1/v:v) at 350 Torr. The catalyst…”
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Shell-like formation of self-organized InAs/GaAs quantum dots by HEITZ, R, GUFFARTH, F, PÖTSCHKE, K, SCHLIWA, A, BIMBERG, D, ZAKHAROV, N. D, WERNER, P

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals by LOTNYK, A, GRAFF, A, SENZ, S, ZAKHAROV, N. D, HESSE, D

“…The orientation relationships of Ti-rich barium titanate phases formed by solid state reactions at high temperatures were studied using (110) TiO2 (rutile) and…”
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Rapid synthesis of few-layer graphene over Cu foil by Kumar, A., Voevodin, A.A., Zemlyanov, D., Zakharov, D.N., Fisher, T.S.

“…We report a unique process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). We show that the…”
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Room-temperature light emission from a highly strained Si/Ge superlattice by Zakharov, N. D., Talalaev, V. G., Werner, P., Tonkikh, A. A., Cirlin, G. E.

“…We discuss the formation of a Si/Ge-superlattice (SL) generated by molecular beam epitaxy. Specific growth parameter were chosen to optimize the periodic…”
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Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3 by Zakharov, N. D., Satyalakshmi, K. M., Koren, G., Hesse, D.

“…The resistivity of SrRuO3 thin films on (001) SrTiO3 substrates grown at different temperatures by pulsed laser deposition is correlated to the microstructure…”
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Switching properties of self-assembled ferroelectric memory cells by Alexe, M., Gruverman, A., Harnagea, C., Zakharov, N. D., Pignolet, A., Hesse, D., Scott, J. F.

“…In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed…”
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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET by Wu, Y.Q., Wang, W.K., Koybasi, O., Zakharov, D.N., Stach, E.A., Nakahara, S., Hwang, J., Ye, P.D.

“…We report the experimental demonstration of deep-submicrometer inversion-mode In 0.75 Ga 0.25 As MOSFETs with ALD high- k Al 2 O 3 as gate dielectric. In this…”
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Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices by Shirazi-HD, M., Turkmeneli, K., Liu, S., Dai, S., Edmunds, C., Shao, J., Gardner, G., Zakharov, D. N., Manfra, M. J., Malis, O.

“…We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy…”
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Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0) by Bishop, S.M., Park, J.-S., Gu, J., Wagner, B.P., Reitmeier, Z.J., Batchelor, D.A., Zakharov, D.N., Liliental-Weber, Z., Davis, R.F.

“…The initial and subsequent stages of growth of AlN on 4H–SiC (1 1 2¯ 0) and GaN on AlN (1 1 2¯ 0) have been investigated using atomic force microscopy and…”
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Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications by Alexe, M., Scott, J. F., Curran, C., Zakharov, N. D., Hesse, D., Pignolet, A.

“…In the present work, we report self-assembling bismuth-containing nano-electroded cells of layered perovskite ferroelectric thin films that are about 200 nm in…”
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Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition by JOHNSON, M. C, LILIENTAL-WEBER, Z, ZAKHAROV, D. N, MCCREADY, D. E, JORGENSON, R. J, WU, J, SHAN, W, BOURRET-COURCHESNE, E. D

“…Temperature-gradient metalorganic chemical vapor deposition (MOCVD) was used to deposit InxGa1−xN/GaN multiple quantum well (MQW) structures with a…”
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