Search Results - "Zaitseva, E. G."

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  1. 1

    Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films by Zaitseva, E. G., Naumova, O. V., Fomin, B. I.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2020)
    “…A method for profiling the components of effective carrier mobility μ eff determined by scattering at surface phonons and the roughness of thin film/dielectric…”
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    Journal Article
  2. 2

    Modification and Investigation of the Catalytic Activity of Coal Additives for Veba Combi Cracking (VCC) by Zaitseva, E. G., Petrov, S. M., Bashkirtseva, N. Yu

    Published in Chemistry and technology of fuels and oils (01-07-2024)
    “…Coal additives impregnated with nickel and iron for use in Veba Combi Cracking technology are investigated. The morphology of the surface and pore space of a…”
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    Journal Article
  3. 3

    Cracking of Resinous-Asphaltene Extra-Heavy Oil Compounds on the Highly Developed Surface of a Coal Additive by Zaitseva, E. G., Gilyazev, R. I., Onishchenko, Ya. V., Vakhin, A. V., Petrov, S. M., Bashkirtseva, N. Yu

    Published in Chemistry and technology of fuels and oils (01-07-2024)
    “…The paper presents the results of cracking of extra-heavy oil in the pore space of a coal additive in a nitrogen atmosphere and in a subcritical aqueous fluid…”
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  4. 4

    About Possibility of Remote Diagnostics of the Respiratory System by Auscultation by E. G. Zaitseva, M. V. Chernetsky, N. A. Shevel

    Published in Pribory i metody izmererij (26-06-2020)
    “…Development of technical base, software, accumulated information on the diagnosis of the respiratory system provided the prerequisites for creating remote…”
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    Journal Article
  5. 5

    Electron mobility in the inversion layers of fully depleted SOI films by Zaitseva, E. G., Naumova, O. V., Fomin, B. I.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)
    “…The dependences of the electron mobility μ eff in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS)…”
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  6. 6

    Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology by Naumova, O. V., Generalov, V. M., Zaitseva, E. G., Latyshev, A. V., Aseev, A. L., Pyankov, S. A., Kolosova, I. V., Ananko, G. G., Agafonov, A. P., Gavrilova, E. V., Maksyutov, R. A., Safatov, A. S.

    Published in Russian microelectronics (2021)
    “…This article contains the results of research on the topical problem of highly sensitive express registration of biological objects using field-effect…”
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  7. 7

    Detection of Ebola Virus VP40 Protein using a Nanowire SOI Biosensor by Generalov, V. M., Naumova, O. V., Fomin, B. I., P’yankov, S. A., Khlistun, I. V., Safatov, A. S., Zaitsev, B. N., Zaitseva, E. G., Aseev, A. L.

    “…Nanowire SOI biosensors are used to detect the Ebola virus VP40 protein by identifying its immune complexes with specific monoclonal antibodies (MCAs). It is…”
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  8. 8

    Identifying the Vaccinia Virus with the Use of a Nanowire Silicon-on-Insulator Biosensor by Generalov, V. M., Naumova, O. V., P’yankov, S. A., Kolosova, I. V., Safatov, A. S., Zaitsev, B. N., Zaitseva, E. G., Buryak, G. A., Cheremiskina, A. A., Filatova, N. A., Aseev, A. L.

    “…The results of identifying the vaccinia virus with the use of nanowire biosensors manufactured on the basis of silicon-on-insulator (SOI) films were presented…”
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  9. 9

    Silicon p-n-Diode Based Electro-Optic Modulators by Naumova, O. V., Fomin, B. I., Zhivodkov, Yu. A., Zaitseva, E. G., Shcheglov, D. V., Latyshev, A. V.

    “…A method for forming p-n -diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows…”
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  10. 10

    Density dependence of electron mobility in the accumulation mode for fully depleted SOI films by Naumova, O. V., Zaitseva, E. G., Fomin, B. I., Ilnitsky, M. A., Popov, V. P.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)
    “…The electron mobility µ eff in the accumulation mode is investigated for undepleted and fully depleted double-gate n + – n – n + silicon-on-insulator (SOI)…”
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