Search Results - "Zahoor, Furqan"
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
Published in Nanoscale research letters (22-04-2020)“…In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging…”
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
Published in Discover nano (09-03-2023)“…The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be…”
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3
Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications
Published in IEEE access (2024)“…In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity…”
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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory
Published in IEEE access (2021)“…Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects…”
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5
A review of piezoelectric MEMS sensors and actuators for gas detection application
Published in Discover nano (27-02-2023)“…Piezoelectric microelectromechanical system (piezo-MEMS)-based mass sensors including the piezoelectric microcantilevers, surface acoustic waves (SAW), quartz…”
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Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers
Published in Micromachines (Basel) (17-05-2023)“…The design of the Ternary Full Adders (TFA) employing Carbon Nanotube Field-Effect Transistors (CNFET) has been widely presented in the literature. To obtain…”
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Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits
Published in IEEE access (2020)“…In this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor…”
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Design and Optimization of High Performance P3HT: PCBM Polymer Solar Cell Using P3HT Buffer Layer
Published in IEEE access (2024)“…In this paper, a novel structure of multilayer organic photovoltaic cell has been designed and simulated. The integration of Poly(3-hexylthiophene-2,5-diyl)…”
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Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
Published in Materials (05-02-2022)“…Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive…”
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10
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)
Published in Micromachines (Basel) (21-10-2021)“…Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated…”
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11
Design implementations of ternary logic systems: A critical review
Published in Results in engineering (01-09-2024)“…In the electronics industry, binary devices have played a critical role since the development of solid-state transistors. While binary technology associates…”
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12
Optimized Nano Scaled Drain and Gate Engineered Schottky Barrier MOSFET with improved Ambipolarity and RF Characteristics
Published in Nanoscale advances (2024)“…In this work, a novel structure of Schottky Barrier MOSFET (SB-MOSFET) has been presented. The proposed device consists of dual material gate and…”
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13
A Single Schottky Barrier MOSFET based Leaky Integrate and Fire Neuron for Neuromorphic Computing
Published in IEEE transactions on circuits and systems. II, Express briefs (01-11-2023)“…In this paper, a Schottky Barrier MOSFET (SB-MOSFET) based on Impact Ionization mechanism is used to design a leaky integrate and fire (LIF) neuron with…”
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14
Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model
Published in SILICON (01-07-2024)“…In this paper, a single SiGe Tunnel FET is used to design a Leaky Integrate and Fire (LIF) neuron with significant improvement in area, energy and cost. SiGe…”
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15
Novel Postprocessing and Sampling Point Optimization Techniques for Enhancing Quality of Randomness in MTJ-Based TRNGs
Published in IEEE transactions on electron devices (01-07-2024)“…True random number generators (TRNGs) play a crucial role in cryptography, hardware security, statistical analysis, simulations, and device modeling. However,…”
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Exploiting Steep Sub-Threshold Swing of Tunnel FET for Energy-Efficient Leaky Integrate-and-Fire Neuron Model
Published in IEEE transactions on nanotechnology (01-01-2023)“…In this work, a single transistor (1-T) leaky-integrate-and-fire neuron based on band to band tunneling mechanism is proposed with significant improvement in…”
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Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
Published in Physica scripta (01-08-2023)“…Abstract The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily…”
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Analysis of thermodynamic resistive switching in ZnO-based RRAM device
Published in Physica scripta (01-03-2023)“…Abstract Due to its excellent performance, resistive random access memory (RRAM) has become one of the most appealing and promising types of memory. However,…”
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Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator
Published in International journal of numerical modelling (01-03-2021)“…The design and simulation of high frequency memristor emulator using carbon nanotube field effect transistor (CNTFET) based Operational Transconductance…”
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20
Harnessing Entropy: RRAM Crossbar-based Unified PUF and RNG
Published in 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID) (06-01-2024)“…Physical Unclonable Functions (PUF) and Random Number Generators (RNG) are two fundamental security components with applications in various tasks of a security…”
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