Search Results - "Zahoor, Furqan"

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  1. 1

    Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications by Zahoor, Furqan, Azni Zulkifli, Tun Zainal, Khanday, Farooq Ahmad

    Published in Nanoscale research letters (22-04-2020)
    “…In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging…”
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    Journal Article
  2. 2

    Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing by Zahoor, Furqan, Hussin, Fawnizu Azmadi, Isyaku, Usman Bature, Gupta, Shagun, Khanday, Farooq Ahmad, Chattopadhyay, Anupam, Abbas, Haider

    Published in Discover nano (09-03-2023)
    “…The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be…”
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    Journal Article
  3. 3

    Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications by Bashir, Faisal, Zahoor, Furqan, Abbas, Haider, Alzahrani, Ali, Hanif, Mehwish

    Published in IEEE access (2024)
    “…In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity…”
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    Journal Article
  4. 4

    ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory by Isyaku, Usman Bature, Khir, Mohd Haris Bin Md, Nawi, I. Md, Zakariya, M. A., Zahoor, Furqan

    Published in IEEE access (2021)
    “…Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects…”
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  5. 5

    A review of piezoelectric MEMS sensors and actuators for gas detection application by Ba Hashwan, Saeed S., Khir, Mohd Haris Md, Nawi, Illani Mohd, Ahmad, Mohamad Radzi, Hanif, Mehwish, Zahoor, Furqan, Al-Douri, Y., Algamili, Abdullah Saleh, Bature, Usman Isyaku, Alabsi, Sami Sultan, Sabbea, Mohammed O. Ba, Junaid, Muhammad

    Published in Discover nano (27-02-2023)
    “…Piezoelectric microelectromechanical system (piezo-MEMS)-based mass sensors including the piezoelectric microcantilevers, surface acoustic waves (SAW), quartz…”
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    Journal Article
  6. 6

    Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers by Jaber, Ramzi A, Haidar, Ali M, Kassem, Abdallah, Zahoor, Furqan

    Published in Micromachines (Basel) (17-05-2023)
    “…The design of the Ternary Full Adders (TFA) employing Carbon Nanotube Field-Effect Transistors (CNFET) has been widely presented in the literature. To obtain…”
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    Journal Article
  7. 7

    Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits by Zahoor, Furqan, Zulkifli, Tun Zainal Azni, Khanday, Farooq Ahmad, Zainol Murad, Sohiful Anuar

    Published in IEEE access (2020)
    “…In this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor…”
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    Journal Article
  8. 8

    Design and Optimization of High Performance P3HT: PCBM Polymer Solar Cell Using P3HT Buffer Layer by Mir, Aaqib M., Bashir, Faisal, Khanday, Farooq Ahmad, Zahoor, Furqan, Hanif, Mehwish, May, Zazilah

    Published in IEEE access (2024)
    “…In this paper, a novel structure of multilayer organic photovoltaic cell has been designed and simulated. The integration of Poly(3-hexylthiophene-2,5-diyl)…”
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    Journal Article
  9. 9

    Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices by Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Algamili, Abdullah Saleh, Hashwan, Saeed S Ba, Zakariya, Mohd Azman

    Published in Materials (05-02-2022)
    “…Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive…”
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    Journal Article
  10. 10

    Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) by Zahoor, Furqan, Hussin, Fawnizu Azmadi, Khanday, Farooq Ahmad, Ahmad, Mohamad Radzi, Mohd Nawi, Illani

    Published in Micromachines (Basel) (21-10-2021)
    “…Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated…”
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  11. 11

    Design implementations of ternary logic systems: A critical review by Zahoor, Furqan, Jaber, Ramzi A., Isyaku, Usman Bature, Sharma, Trapti, Bashir, Faisal, Abbas, Haider, Alzahrani, Ali S., Gupta, Shagun, Hanif, Mehwish

    Published in Results in engineering (01-09-2024)
    “…In the electronics industry, binary devices have played a critical role since the development of solid-state transistors. While binary technology associates…”
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  12. 12

    Optimized Nano Scaled Drain and Gate Engineered Schottky Barrier MOSFET with improved Ambipolarity and RF Characteristics by Bashir, Faisal, Zahoor, Furqan, Alzahrani, Ali S.

    Published in Nanoscale advances (2024)
    “…In this work, a novel structure of Schottky Barrier MOSFET (SB-MOSFET) has been presented. The proposed device consists of dual material gate and…”
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  13. 13

    A Single Schottky Barrier MOSFET based Leaky Integrate and Fire Neuron for Neuromorphic Computing by Bashir, Faisal, Zahoor, Furqan, Alzahrani, Ali S., Khan, Abdul Raouf

    “…In this paper, a Schottky Barrier MOSFET (SB-MOSFET) based on Impact Ionization mechanism is used to design a leaky integrate and fire (LIF) neuron with…”
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  14. 14

    Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model by Bashir, Faisal, Zahoor, Furqan, Alzahrani, Ali S.

    Published in SILICON (01-07-2024)
    “…In this paper, a single SiGe Tunnel FET is used to design a Leaky Integrate and Fire (LIF) neuron with significant improvement in area, energy and cost. SiGe…”
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    Journal Article
  15. 15

    Novel Postprocessing and Sampling Point Optimization Techniques for Enhancing Quality of Randomness in MTJ-Based TRNGs by Zahoor, Furqan, Nisar, Arshid, Kranti Das, Kunal, Maitra, Subhamoy, Kumar Kaushik, Brajesh, Chattopadhyay, Anupam

    Published in IEEE transactions on electron devices (01-07-2024)
    “…True random number generators (TRNGs) play a crucial role in cryptography, hardware security, statistical analysis, simulations, and device modeling. However,…”
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  16. 16

    Exploiting Steep Sub-Threshold Swing of Tunnel FET for Energy-Efficient Leaky Integrate-and-Fire Neuron Model by Khanda, Mudasir A, Khanday, Farooq A, Bashir, Faisal, Zahoor, Furqan

    Published in IEEE transactions on nanotechnology (01-01-2023)
    “…In this work, a single transistor (1-T) leaky-integrate-and-fire neuron based on band to band tunneling mechanism is proposed with significant improvement in…”
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  17. 17

    Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications by Zahoor, Furqan, Hanif, Mehwish, Isyaku Bature, Usman, Bodapati, Srinivasu, Chattopadhyay, Anupam, Azmadi Hussin, Fawnizu, Abbas, Haider, Merchant, Farhad, Bashir, Faisal

    Published in Physica scripta (01-08-2023)
    “…Abstract The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily…”
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  18. 18

    Analysis of thermodynamic resistive switching in ZnO-based RRAM device by Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Ba Hashwan, Saeed S, Algamili, Abdullah Saleh, Abbas, Haider

    Published in Physica scripta (01-03-2023)
    “…Abstract Due to its excellent performance, resistive random access memory (RRAM) has become one of the most appealing and promising types of memory. However,…”
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  19. 19

    Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator by Khurshid, Tabassum, Fatima, Syed, Khanday, Farooq Ahmad, Bashir, Faisal, Zahoor, Furqan, Hussin, Fawnizu Azmadi

    “…The design and simulation of high frequency memristor emulator using carbon nanotube field effect transistor (CNTFET) based Operational Transconductance…”
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    Journal Article
  20. 20

    Harnessing Entropy: RRAM Crossbar-based Unified PUF and RNG by Rajendran, Gokulnath, Zahoor, Furqan, Thakker, Sidhaant Sachin, Singh, Simranjeet, Merchant, Farhad, Rana, Vikas, Chattopadhyay, Anupam

    “…Physical Unclonable Functions (PUF) and Random Number Generators (RNG) are two fundamental security components with applications in various tasks of a security…”
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    Conference Proceeding