Search Results - "Zafrani, M."

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  1. 1

    Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs by Liu, S., Titus, J.L., DiCienzo, C., Huy Cao, Zafrani, M., Boden, M., Berberian, R.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred…”
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    Journal Article
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    Static and dynamic characterization of large-area high-current-density SiC Schottky diodes by Morisette, D.T., Cooper, J.A., Melloch, M.R., Dolny, G.M., Shenoy, P.M., Zafrani, M., Gladish, J.

    Published in IEEE transactions on electron devices (01-02-2001)
    “…The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier diodes are presented. With a breakdown voltage greater than 1200 V…”
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    Journal Article
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    Analysis of Commercial Trench Power MOSFETs' Responses to ^ Irradiation by Liu, S., DiCienzo, C., Bliss, M., Zafrani, M., Boden, M., Titus, J.L.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…This paper presents a detailed analysis of commercial trench power MOSFET responses to Co 60 irradiation of all key d.c. electrical test parameters. Charge…”
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    Journal Article
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    Radiation Results for Modern GaN-on-Si Power Transistors by Zafrani, M., Brandt, J., Strittmatter, R., Sun, B., Zhang, S., Lidow, A.

    “…Latest generation GaN-on-Si power transistors (EPC7XXX Series), specifically designed for high radiation resistance and low dynamic on-resistance, are…”
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    Conference Proceeding
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    Effects of Ion Species on SEB Failure Voltage of Power DMOSFET by Liu, S., Lauenstein, Jean-Marie, Ferlet-Cavrois, V., Marec, R., Hernandez, F., Scheick, L., Bezerra, F., Muschitiello, M., Poivey, C., Sukhaseum, N., Coquelet, L., Cao, H., Carrier, D., Brisebois, M. A., Mangeret, R., Ecoffet, R., LaBel, K., Zafrani, M., Sherman, P.

    Published in IEEE transactions on nuclear science (01-12-2011)
    “…This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive…”
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    Journal Article
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    Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs by Lauenstein, J.-M, Goldsman, N., Liu, S., Titus, J. L., Ladbury, R. L., Kim, H. S., Phan, A. M., LaBel, K. A., Zafrani, M., Sherman, P.

    Published in IEEE transactions on nuclear science (01-12-2011)
    “…The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for…”
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    Journal Article
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    Analysis of Commercial Trench Power MOSFETsa Responses to{rm Co}{60}$ Irradiation by Liu, S, DiCienzo, C, Bliss, M, Zafrani, M, Boden, M, Titus, J L

    Published in IEEE transactions on nuclear science (01-06-2008)
    “…This paper presents a detailed analysis of commercial trench power MOSFET responses to Co@@u60@ irradiation of all key d.c. electrical test parameters. Charge…”
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    Journal Article
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    Analysis of Commercial Trench Power MOSFETs' Responses to rm Co 60 Irradiation by Liu, S, DiCienzo, C, Bliss, M, Zafrani, M, Boden, M, Titus, J L

    Published in IEEE transactions on nuclear science (01-01-2008)
    “…This paper presents a detailed analysis of commercial trench power MOSFET responses to Co super(60) irradiation of all key d.c. electrical test parameters…”
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    Journal Article
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    Microcirculation in Acute and Chronic Kidney Diseases by Zafrani, Lara, MD, PhD, Ince, Can, PhD

    Published in American journal of kidney diseases (01-12-2015)
    “…The renal microvasculature is emerging as a key player in acute and chronic kidney diseases. Renal microvascular disease involves alterations in endothelial…”
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    Journal Article
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    Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs by Lidow, A., Nakata, A., Rearwin, M., Strydom, J., Zafrani, A. M.

    “…This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB…”
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    Conference Proceeding
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    The Microcirculation of the Septic Kidney by Zafrani, Lara, MD, PhD, Payen, Didier, MD, PhD, Azoulay, Elie, MD, PhD, Ince, Can, PhD

    Published in Seminars in nephrology (2015)
    “…Abstract The renal microcirculation plays a major role in the delivery of blood and oxygen to the kidney. In sepsis, alterations in renal microvascular…”
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    Journal Article
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    The Critically Ill Kidney Transplant Recipient by Canet, Emmanuel, MD, Zafrani, Lara, MD, PhD, Azoulay, Élie, MD, PhD

    Published in Chest (01-06-2016)
    “…Kidney transplantation is the most common solid organ transplantation performed worldwide. Up to 6% of kidney transplant recipients experience a…”
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    Journal Article
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    Bilirubin-Associated Acute Tubular Necrosis in a Kidney Transplant Recipient by Rafat, Cédric, MD, Burbach, Maren, BM, Brochériou, Isabelle, MD, PhD, Zafrani, Lara, MD, PhD, Callard, Patrice, MD, Rondeau, Eric, MD, PhD, Hertig, Alexandre, MD, PhD

    Published in American journal of kidney diseases (01-05-2013)
    “…Unlike hemoglobin or myoglobin, bilirubin, a breakdown product of the catabolism of heme molecules, usually is not seen as a nephrotoxic protein. We report the…”
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    Journal Article
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    Acute Respiratory Failure in Patients with Hematologic Malignancies by Moreau, Anne-Sophie, MD, Peyrony, Olivier, MD, Lemiale, Virginie, MD, Zafrani, Lara, MD, PhD, Azoulay, Elie, MD, PhD

    Published in Clinics in chest medicine (01-06-2017)
    “…Acute respiratory failure occurs in up to 50% of patients treated for hematologic malignancies and is associated with a high case fatality rate. Because of…”
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    Journal Article
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    Fabrication of a double-side IGBT by very low temperature wafer bonding by Hobart, K.D., Kub, F.J., Dolny, G., Zafrani, M., Neilson, J.M., Gladish, J., McLachlan, C.

    “…A bidirectional double-side IGBT has been successfully fabricated by very low temperature direct wafer bonding for the first time. The utility of the second…”
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    Conference Proceeding
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    Evaluation on protective single event burnout test method for power DMOSFETs by Liu, S., Marec, R., Sherman, P., Titus, J. L., Bezerra, F., Ferlet-Cavrois, V., Marin, M., Sukhaseum, N., Widmer, F., Muschitiello, M., Gouyet, L., Ecoffet, R., Zafrani, M.

    “…This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test…”
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    Conference Proceeding
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