Search Results - "Zaborowski, Michal"

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  1. 1

    A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples by Piotrowska, Anna Katarzyna, Łaszcz, Adam, Zaborowski, Michał, Broda, Artur, Szmigiel, Dariusz

    Published in Sensors (Basel, Switzerland) (30-11-2022)
    “…This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the…”
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    Journal Article
  2. 2

    Monitoring of beer fermentation based on hybrid electronic tongue by Kutyła-Olesiuk, Anna, Zaborowski, Michał, Prokaryn, Piotr, Ciosek, Patrycja

    “…Monitoring of biotechnological processes, including fermentation is extremely important because of the rapidly occurring changes in the composition of the…”
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    Journal Article
  3. 3

    Gly-Gly-His Immobilized On Monolayer Modified Back-Side Contact Miniaturized Sensors for Complexation of Copper Ions by Wawrzyniak, Urszula E., Ciosek, Patrycja, Zaborowski, Michał, Liu, Guozhen, Gooding, J. Justin

    Published in Electroanalysis (New York, N.Y.) (01-06-2013)
    “…Miniaturized planar back‐side contact transducers (BSC) with chemically modified gold surface have been utilized as electrochemical sensors. The electrodes…”
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    Journal Article
  4. 4

    Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy by Wielgoszewski, Grzegorz, Pałetko, Piotr, Tomaszewski, Daniel, Zaborowski, Michał, Jóźwiak, Grzegorz, Kopiec, Daniel, Gotszalk, Teodor, Grabiec, Piotr

    Published in Micron (Oxford, England : 1993) (01-12-2015)
    “…•We present results of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) investigations of 100-nm silicon nanowires.•AFM-based…”
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    Journal Article
  5. 5

    Double-fin FETs based on standard CMOS approach by Zaborowski, Michał, Tomaszewski, Daniel, Panas, Andrzej, Grabiec, Piotr

    Published in Microelectronic engineering (01-05-2010)
    “…Double-fin p-MOSFETs have been fabricated using PaDEOx process. SOI 133 nm wide and bulk 260 nm-wide FinFETs have been electrically characterized and compared…”
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    Journal Article Conference Proceeding
  6. 6

    Development and characterisation of nanowire-based FETs by Zaborowski, Michał, Tomaszewski, Daniel, Dumania, Piotr, Grabiec, Piotr

    Published in Microelectronics and reliability (01-07-2011)
    “…Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM…”
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    Journal Article Conference Proceeding
  7. 7

    Application of mass fabricated silicon-based gold transducers for amperometric biosensors by Ziółkowski, Robert, Górski, Łukasz, Zaborowski, Michał, Malinowska, Elżbieta

    “…The backside contact, silicon-based transducers with vacuum-deposited gold layer (BSC) are evaluated as the base for electrochemical biosensors construction…”
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    Journal Article
  8. 8

    Narrow paths beyond limits of lithography by Zaborowski, Michał, Grabiec, Piotr

    Published in Microelectronic engineering (01-05-2008)
    “…Well-controlled methods of nanopattern definition in SiO2 and Si have been developed: Lateral Pattern Definition technique in SiO2 (LPD) and Pattern Definition…”
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    Journal Article Conference Proceeding
  9. 9

    The Role of Quercetin as a Plant-Derived Bioactive Agent in Preventive Medicine and Treatment in Skin Disorders by Zaborowski, Michał Kazimierz, Długosz, Anna, Błaszak, Błażej, Szulc, Joanna, Leis, Kamil

    Published in Molecules (Basel, Switzerland) (05-07-2024)
    “…Quercetin, a bioactive plant flavonoid, is an antioxidant, and as such it exhibits numerous beneficial properties including anti-inflammatory, antiallergic,…”
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    Journal Article
  10. 10

    A simple method for characterization of MOSFET serial resistance asymmetry by Tomaszewski, Daniel, Gluszko, Grzegorz, Malesinska, Jolanta, Domanski, Krzysztof, Zaborowski, Michal, Kucharski, Krzysztof, Szmigiel, Dariusz, Sierakowski, Andrzej

    “…A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics…”
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    Conference Proceeding Journal Article
  11. 11

    Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions by Zaborowski, Michał, Tomaszewski, Daniel, Jaroszewicz, Bohdan, Grabiec, Piotr

    “…Three sensors for chemical and physical examination of aqueous solutions were presented in the paper. An Au potentiometric electrode, an AgCl chlorine ion…”
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    Journal Article
  12. 12

    Kinetics of hillock growth in Al and Al-alloys by Zaborowski, Michał, Dumania, Piotr

    Published in Microelectronic engineering (2000)
    “…Hillock growth kinetics and size distribution were investigated in Al, Al:Si 1% and Al:Si1%:Cu 0.5% layers. Metallization surface was examined by optical, SEM…”
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    Journal Article Conference Proceeding
  13. 13

    Nano-line width control and standards using Lateral Pattern Definition technique by Zaborowski, Michał, Szmigiel, Dariusz, Gotszalk, Teodor, Ivanova, Katerina, Sarov, Yanko, Ivanov, Tzvetan, Volland, Burkhard E., Rangelow, Ivo W., Grabiec, Piotr

    Published in Microelectronic engineering (01-04-2006)
    “…Lateral Pattern Definition technique was adopted for manufacturing nano-size width standards. Narrow oxide fences, 40 nm to 100 nm wide were manufactured using…”
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    Journal Article Conference Proceeding
  14. 14

    Electrical characterization of ISFETs by Tomaszewsk, Daniel, Yang, Chia-Ming, Jaroszewicz, Bohdan, Zaborowski, Michał, Grabiec, Piotr, G. Pijanowska, Dorota

    “…Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like…”
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    Journal Article
  15. 15

    Thermoemission-Based Model of THz Detection and Its Validation-JLFET Case Studies by Marczewski, Jacek, Tomaszewski, Daniel, Zaborowski, Michal, Bajurko, Pawel

    “…Silicon junctionless field-effect transistors (JLFETs) detect THz radiation even at frequencies above a few THz. This effect cannot be explained by classic…”
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    Journal Article
  16. 16

    A simple multi-purpose method for compact model evaluation by Tomaszewski, Daniel, Gluszko, Grzegorz, Zaborowski, Michal, Malesinska, Jolanta, Kucharski, Krzysztof

    “…A simple method for data analysis in semiconductor device characterization and compact modeling is proposed. The method allows for a direct comparison of data…”
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    Conference Proceeding
  17. 17

    Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors by Zagrajek, Przemyslaw, Danilov, Sergey N., Marczewski, Jacek, Zaborowski, Michal, Kolacinski, Cezary, Obrebski, Dariusz, Kopyt, Pawel, Salski, Bartlomiej, But, Dmytro, Knap, Wojciech, Ganichev, Sergey D.

    “…We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field-effect transistors. We…”
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    Journal Article
  18. 18

    THz Detection in p-Type FETs by Zaborowski, Michal, Marczewski, Jacek, Tomaszewski, Daniel, Zagrajek, Przemyslaw

    “…The paper describes the results of a study on p-type field effect transistors working as detectors of THz radiation. The p-type Junctionless FETs and MOSFETs…”
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    Conference Proceeding
  19. 19

    Modeling of THz Detection in JLFETs - A Comparative Study by Tomaszewski, Daniel, Zaborowski, Michal, Marczewski, Jacek, Bajurko, Pawel

    “…We present a review of compact models of THz radiation detection in MOSFETs, based on plasmon excitation, resistive mixing and thermionic emission. The model…”
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    Conference Proceeding
  20. 20

    A Simple Method for Analysis of Operation of JLFET THz Radiation Sensors by Zaborowski, Michal, Tomaszewski, Daniel, Marczewski, Jacek, Zagrajek, Przemyslaw

    “…A new approach to an analysis of the operation of a "black box" device generating a DC output signal is presented. The signal is measured using a lock-in in…”
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    Conference Proceeding